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BSC057N03LSGATMA1

BSC057N03LSGATMA1
Mfr. #:
BSC057N03LSGATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSC057N03LSGATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
71 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
30 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
45 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
OptiMOS
प्याकेजिङ:
रील
उचाइ:
1.27 mm
लम्बाइ:
5.9 mm
शृङ्खला:
OptiMOS 3
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.15 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
36 S
पतन समय:
3.2 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
3.6 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
19 ns
सामान्य टर्न-अन ढिलाइ समय:
4.7 ns
भाग # उपनाम:
BSC057N03LS BSC57N3LSGXT G SP000275113
Tags
BSC057N03LSG, BSC057N03L, BSC057N03, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
भाग # Mfg। विवरण स्टक मूल्य
BSC057N03LSGATMA1
DISTI # V72:2272_06390866		Infineon Technologies AGTrans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		9495
  • 75000:$0.2298
  • 30000:$0.2367
  • 15000:$0.2437
  • 6000:$0.2507
  • 3000:$0.2785
  • 1000:$0.3095
  • 500:$0.3096
  • 250:$0.3439
  • 100:$0.3822
  • 50:$0.5470
  • 25:$0.5499
  • 10:$0.5528
  • 1:$0.6321
BSC057N03LSGATMA1
DISTI # BSC057N03LSGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		79In Stock
  • 1000:$0.4079
  • 500:$0.5099
  • 100:$0.6883
  • 10:$0.8920
  • 1:$1.0200
BSC057N03LSGATMA1
DISTI # BSC057N03LSGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 71A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		79In Stock
  • 1000:$0.4079
  • 500:$0.5099
  • 100:$0.6883
  • 10:$0.8920
  • 1:$1.0200
BSC057N03LSGATMA1
DISTI # BSC057N03LSGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 71A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.3341
BSC057N03LSGATMA1
DISTI # 30321476		Infineon Technologies AGTrans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		9495
  • 6000:$0.2507
  • 3000:$0.2785
  • 1000:$0.3095
  • 500:$0.3096
  • 250:$0.3439
  • 100:$0.3822
  • 50:$0.5470
  • 26:$0.5499
BSC057N03LSGATMA1
DISTI # 29714330		Infineon Technologies AGTrans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.3413
BSC057N03LSGATMA1
DISTI # BSC057N03LSGATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 17A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC057N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.2969
  • 10000:$0.2969
  • 20000:$0.2959
  • 30000:$0.2949
  • 50000:$0.2939
BSC057N03LSGATMA1.
DISTI # 31AC8217		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:71A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:45W,No. of Pins:8Pins0
  • 1:$0.2830
  • 10000:$0.2760
  • 20000:$0.2750
  • 30000:$0.2740
  • 50000:$0.2730
BSC057N03LSGATMA1
DISTI # 726-BSC057N03LSGATMA		Infineon Technologies AGMOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
RoHS: Compliant		4840
  • 1:$0.8400
  • 10:$0.6980
  • 100:$0.4500
  • 1000:$0.3600
BSC057N03LS G
DISTI # 726-BSC057N03LSG		Infineon Technologies AGMOSFET N-Ch 30V 71A TDSON-8 OptiMOS 3
RoHS: Compliant		5085
  • 1:$0.8400
  • 10:$0.6980
  • 100:$0.4500
  • 1000:$0.3600
BSC057N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		40
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
BSC057N03LSGATMA1Infineon Technologies AGSingle N-Channel 30 V 8.5 mOhm 30 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant		5000Reel
  • 5000:$0.2850
BSC057N03LSGATMA1
DISTI # 8275261P		Infineon Technologies AGMOSFET N-CH 17A 30V OPTIMOS3 TDSON8EP, RL3825
  • 125:£0.1930
BSC057N03LSGATMA1
DISTI # C1S322000240926		Infineon Technologies AGTrans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
RoHS: Compliant		9495
  • 100:$0.3826
  • 50:$0.5471
  • 25:$0.5500
  • 10:$0.5528
BSC057N03LSGATMA1
DISTI # 1775449		Infineon Technologies AGMOSFET, N CH, 71A, 30V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$1.3400
  • 10:$1.1100
  • 100:$0.7120
  • 1000:$0.5710
  • 5000:$0.4840
BSC057N03LSGATMA1
DISTI # 1775449		Infineon Technologies AGMOSFET, N CH, 71A, 30V, PG-TDSON-8
RoHS: Compliant		0
  • 5:£0.5930
  • 25:£0.5310
  • 100:£0.4680
  • 250:£0.4060
  • 500:£0.3430
छवि भाग # विवरण
BSC057N03LS G

Mfr.#: BSC057N03LS G

OMO.#: OMO-BSC057N03LS-G

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Mfr.#: ABM3B-12.000MHZ-B2-T

OMO.#: OMO-ABM3B-12-000MHZ-B2-T-ABRACON

 Crystals +/-20ppm 12MHZ
BSC057N03LS G

Mfr.#: BSC057N03LS G

OMO.#: OMO-BSC057N03LS-G-1190

 Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R (Alt: BSC057N03LS G)
TPS62162DSGR

Mfr.#: TPS62162DSGR

OMO.#: OMO-TPS62162DSGR-TEXAS-INSTRUMENTS

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Mfr.#: TPS62750DSKT

OMO.#: OMO-TPS62750DSKT-TEXAS-INSTRUMENTS

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उपलब्धता
स्टक:
Available
अर्डर मा:
1500
मात्रा प्रविष्ट गर्नुहोस्:
BSC057N03LSGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.८४
US$ ०.८४
10
US$ ०.७०
US$ ६.९८
100
US$ ०.४५
US$ ४५.००
1000
US$ ०.३६
US$ ३६०.००
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