IPU80R600P7AKMA1

IPU80R600P7AKMA1
Mfr. #:
IPU80R600P7AKMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPU80R600P7AKMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPU80R600P7AKMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
IPAK-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
510 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
20 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
60 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
शृङ्खला:
CoolMOS P7
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
10 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
1500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
40 ns
सामान्य टर्न-अन ढिलाइ समय:
8 ns
भाग # उपनाम:
IPU80R600P7 SP001644622
Tags
IPU80, IPU8, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 V 600 mOhm 20 nC CoolMOS™ Power Mosfet - IPAK
***ical
800V CoolMOS P7 Power Transistor
***i-Key
MOSFET N-CH 800V 8A TO251-3
***ronik
N-CH 800V 8,0A 600mOhm TO251-3
***et Europe
LOW POWER_NEW
***ark
Mosfet, N-Ch, 800V, 8A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.51Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 8A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.51ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:60W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 800V, 8A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:8A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.51ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
800V CoolMOS P7 MOSFETs
Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.
भाग # Mfg। विवरण स्टक मूल्य
IPU80R600P7AKMA1
DISTI # 33733772
Infineon Technologies AG800V CoolMOS P7 Power Transistor1500
  • 1500:$1.0828
IPU80R600P7AKMA1
DISTI # IPU80R600P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 800V 8A TO251-3
RoHS: Compliant
Min Qty: 1
Container: Tube
1490In Stock
  • 6000:$0.6742
  • 3000:$0.7097
  • 1500:$0.7604
  • 100:$1.1660
  • 25:$1.4196
  • 10:$1.4950
  • 1:$1.6700
IPU80R600P7AKMA1
DISTI # SP001644622
Infineon Technologies AGLOW POWER_NEW (Alt: SP001644622)
RoHS: Compliant
Min Qty: 1
Europe - 1500
  • 1000:€0.6089
  • 500:€0.6199
  • 100:€0.6369
  • 50:€0.6499
  • 25:€0.7459
  • 10:€0.8929
  • 1:€1.0649
IPU80R600P7AKMA1
DISTI # IPU80R600P7AKMA1
Infineon Technologies AGLOW POWER_NEW - Rail/Tube (Alt: IPU80R600P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$0.6129
  • 9000:$0.6239
  • 6000:$0.6459
  • 3000:$0.6699
  • 1500:$0.6949
IPU80R600P7AKMA1
DISTI # 24AC9064
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.51ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes171
  • 1000:$0.7320
  • 500:$0.9270
  • 100:$1.0400
  • 10:$1.3600
  • 1:$1.6000
IPU80R600P7AKMA1
DISTI # 726-IPU80R600P7AKMA1
Infineon Technologies AGMOSFET
RoHS: Compliant
105
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0300
  • 500:$0.9180
  • 1000:$0.7250
IPU80R600P7AKMA1Infineon Technologies AGSingle N-Channel 800 V 600 mOhm 20 nC CoolMOS Power Mosfet - IPAK
RoHS: Not Compliant
1500Tube
  • 1500:$0.6600
IPU80R600P7AKMA1
DISTI # 2771342
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251176
  • 500:£0.6660
  • 250:£0.7060
  • 100:£0.7460
  • 10:£0.9790
  • 1:£1.1500
IPU80R600P7AKMA1
DISTI # 2771342
Infineon Technologies AGMOSFET, N-CH, 800V, 8A, TO-251
RoHS: Compliant
171
  • 6000:$1.0200
  • 3000:$1.0700
  • 1500:$1.1500
  • 100:$1.7600
  • 25:$2.1400
  • 10:$2.2600
  • 1:$2.5200
IPU80R600P7AKMA1
DISTI # XSFP00000130824
Infineon Technologies AG 
RoHS: Compliant
3000 in Stock0 on Order
  • 3000:$0.8800
  • 1500:$0.9429
IPU80R600P7AKMA1
DISTI # XSKDRABV0021277
Infineon Technologies AG 
RoHS: Compliant
4500 in Stock0 on Order
  • 4500:$0.8467
  • 1500:$0.9071
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स्टक:
100
अर्डर मा:
2083
मात्रा प्रविष्ट गर्नुहोस्:
IPU80R600P7AKMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.५८
US$ १.५८
10
US$ १.३५
US$ १३.५०
100
US$ १.०३
US$ १०३.००
500
US$ ०.९२
US$ ४५९.००
1000
US$ ०.७२
US$ ७२५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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