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SIDR608DP-T1-RE3

SIDR608DP-T1-RE3
Mfr. #:
SIDR608DP-T1-RE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET N-Channel 45 V (D-S) MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIDR608DP-T1-RE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIDR608DP-T1-RE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
45 V
आईडी - निरन्तर ड्रेन वर्तमान:
208 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.8 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.1 V
Vgs - गेट-स्रोत भोल्टेज:
- 16 V, 20 V
Qg - गेट चार्ज:
111 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
104 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
पतन समय:
8 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
50 ns
सामान्य टर्न-अन ढिलाइ समय:
19 ns
Tags
SIDR6, SIDR, SID
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
छवि भाग # विवरण
SIDR608DP-T1-RE3

Mfr.#: SIDR608DP-T1-RE3

OMO.#: OMO-SIDR608DP-T1-RE3

 MOSFET N-Channel 45 V (D-S) MOSFET
उपलब्धता
स्टक:
50
अर्डर मा:
2033
मात्रा प्रविष्ट गर्नुहोस्:
SIDR608DP-T1-RE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.४३
US$ २.४३
10
US$ २.०२
US$ २०.२०
100
US$ १.५६
US$ १५६.००
500
US$ १.३७
US$ ६८५.००
1000
US$ १.१३
US$ १ १३०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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