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SIA813DJ-T1-GE3

SIA813DJ-T1-GE3
Mfr. #:
SIA813DJ-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIA813DJ-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA813DJ-T1-GE3 DatasheetSIA813DJ-T1-GE3 Datasheet (P4-P6)SIA813DJ-T1-GE3 Datasheet (P7-P9)SIA813DJ-T1-GE3 Datasheet (P10)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SIA
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIA813DJ-GE3
एकाइ वजन:
0.000988 oz
Tags
SIA81, SIA8, SIA
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R
***i-Key
MOSFET P-CH 20V 4.5A SC70-6
***ment14 APAC
P CHANNEL MOSFET, -20V, 4.5A, SC-70; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:-4.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):460mohm; Rds(on) Test Voltage Vgs:8V
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-4500mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.46ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:1.9W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.3350
SIA813DJ-T1-GE3
DISTI # SIA813DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA813DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3049
  • 6000:$0.2959
  • 12000:$0.2839
  • 18000:$0.2759
  • 30000:$0.2689
SIA813DJ-T1-GE3
DISTI # 781-SIA813DJ-T1-GE3		Vishay IntertechnologiesMOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
RoHS: Compliant		0
  • 3000:$0.3050
  • 6000:$0.2840
  • 9000:$0.2740
  • 24000:$0.2630
छवि भाग # विवरण
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3

 MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
SIA813DJ-T1-GE3

Mfr.#: SIA813DJ-T1-GE3

OMO.#: OMO-SIA813DJ-T1-GE3-VISHAY

 RF Bipolar Transistors MOSFET 20V 4.5A 6.5W 94mohm @ 4.5V
उपलब्धता
स्टक:
Available
अर्डर मा:
4500
मात्रा प्रविष्ट गर्नुहोस्:
SIA813DJ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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