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MSC060SMA070S

MSC060SMA070S
Mfr. #:
MSC060SMA070S
निर्माता:
Microchip / Microsemi
विवरण:
MOSFET UNRLS, FG, SIC MOSFET, TO-268
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MSC060SMA070S डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MSC060SMA070S थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
D3PAK-3
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
700 V
Rds अन - ड्रेन-स्रोत प्रतिरोध:
69 mOhms
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
Tags
MSC06, MSC0, MSC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
SILICON CARBIDE MOSFETS
***i-Key
MOSFET N-CH 700V D3PAK
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
छवि भाग # विवरण
MSC060SMA070S

Mfr.#: MSC060SMA070S

OMO.#: OMO-MSC060SMA070S

 MOSFET UNRLS, FG, SIC MOSFET, TO-268
MSC0603C-4N3J

Mfr.#: MSC0603C-4N3J

OMO.#: OMO-MSC0603C-4N3J-1190

 नयाँ र मौलिक
MSC0603C-R15J

Mfr.#: MSC0603C-R15J

OMO.#: OMO-MSC0603C-R15J-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
5000
मात्रा प्रविष्ट गर्नुहोस्:
MSC060SMA070S को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १५.७४
US$ १५.७४
5
US$ १४.९३
US$ ७४.६५
10
US$ १४.३८
US$ १४३.८०
25
US$ १३.८२
US$ ३४५.५०
50
US$ १३.३०
US$ ६६५.००
100
US$ १२.२२
US$ १ २२२.००
250
US$ ११.७७
US$ २ ९४२.५०
500
US$ ११.३६
US$ ५ ६८०.००
1000
US$ १०.४२
US$ १० ४२०.००
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