IRGIB15B60KD1P

Mfr. #:: IRGIB15B60KD1P
निर्माता:: Infineon Technologies
विवरण:: IGBT Transistors 600V Low-Vceon
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IRGIB15B60KD1P डाटा पाना
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ECAD Model:
थप जानकारी:: IRGIB15B60KD1P थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता: Infineon टेक्नोलोजीहरू

उत्पादन कोटि: IGBTs - एकल

शृङ्खला: -

प्याकेजिङ: ट्यूब

एकाइ - वजन: 0.081130 oz

माउन्टिङ-शैली: प्वाल मार्फत

प्याकेज-केस: TO-220-3 Full Pack

इनपुट-प्रकार: मानक

माउन्टिङ-प्रकार: प्वाल मार्फत

आपूर्तिकर्ता-उपकरण-प्याकेज: TO-220AB Full-Pak

कन्फिगरेसन: एकल

पावर-अधिकतम: 52W

उल्टो-रिकभरी-समय-trr: 67ns

वर्तमान-कलेक्टर-आईसी-मैक्स: 19A

भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम: 600V

IGBT-प्रकार: NPT

वर्तमान-कलेक्टर-स्पंद-आईसीएम: 38A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 15A

स्विचिङ-ऊर्जा: 127μJ (on), 334μJ (off)

गेट चार्ज: 56nC

Td-on-off-25°C: 30ns/173ns

परीक्षण अवस्था: 400V, 15A, 22 Ohm, 15V

Pd-शक्ति-डिसिपेशन: 52 W

न्यूनतम-सञ्चालन-तापमान: - 55 C

कलेक्टर-एमिटर-भोल्टेज-VCEO-अधिकतम: 600 V

कलेक्टर-एमिटर-स्याचुरेसन-भोल्टेज: 1.8 V

निरन्तर-कलेक्टर-वर्तमान-मा-25-C: 19 A

अधिकतम-गेट-एमिटर-भोल्टेज: +/- 20 V

Tags: IRGIB15B60KD1P, IRGIB15, IRGIB1, IRGIB, IRGI, IRG

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRGIB15B60KD1P विवरण

***Components: In a Pack of 2, Infineon IRGIB15B60KD1P IGBT, 19 A 600 V, 3-Pin TO-220

***ical: Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack

***ernational Rectifier: 600V Low-Vceon Copack IGBT in a TO-220 FullPak package

***ineon: Target Applications: Fan; Pump; Solar; UPS; Washing Machine

***ied Electronics & Automation: IGBT 19A 600V Ultrafast Diode TO-220FP

***i-Key: IGBT ULT FAST DIO 600V TO-220FP

***ark: IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; ;RoHS Compliant: Yes

***nell: IGBT, TO-220FP; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:19A; Voltage, Vce Sat Max:2.2V; Power Dissipation:52W; Case Style:TO-220FP; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:38A; Power, Pd:52W; Time, Rise:35ns

***ment14 APAC: IGBT, TO-220FP; Transistor Type:IGBT; DC Collector Current:19A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:52W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:19A; Package / Case:TO-220FP; Power Dissipation Max:52W; Power Dissipation Pd:52W; Power Dissipation Pd:52W; Pulsed Current Icm:38A; Rise Time:35ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

IRGIB15B60KD1P थप जानकारी

300-1200V IGBTs: Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IRGIB15B60KD1P DISTI # 31066240	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube RoHS: Compliant	1000	5000:$1.8528 2500:$1.9200 1000:$2.0256 500:$2.4000 250:$2.6688 100:$2.8128 10:$3.2448
IRGIB15B60KD1P DISTI # IRGIB15B60KD1P-ND	Infineon Technologies AG	IGBT 600V 19A 52W TO220FP RoHS: Compliant Min Qty: 1 Container: Tube	3990In Stock	1000:$2.2075 500:$2.6175 100:$3.0747 50:$3.5478 1:$4.1800
IRGIB15B60KD1P DISTI # C1S322000499975	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube RoHS: Compliant	1000	1000:$2.1500 500:$2.3200 100:$3.0300 50:$3.3000 10:$4.0200 1:$6.2000
IRGIB15B60KD1P-EL DISTI # IRGIB15B60KD1P	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.9900 10:$1.9900 25:$1.9900 50:$1.9900 100:$1.8900 500:$1.7900 1000:$1.7900
IRGIB15B60KD1P DISTI # 63J7449	Infineon Technologies AG	SINGLE IGBT, 600V,DC Collector Current:19A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:52W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:- RoHS Compliant: Yes	103	1:$4.5800 10:$3.9500 25:$3.7900 50:$3.6300 100:$3.4700 250:$3.3200 500:$3.0200
IRGIB15B60KD1P DISTI # 70600036	Infineon Technologies AG	IRGIB15B60KD1P,IGBT Transistor,19 A 600 V,3-Pin TO-220 RoHS: Compliant	0	2:$5.5100
IRGIB15B60KD1P DISTI # 942-IRGIB15B60KD1P	Infineon Technologies AG	IGBT Transistors 600V Low-Vceon RoHS: Compliant	3669	1:$3.9800 10:$3.3800 100:$2.9300 250:$2.7800 500:$2.5000
IRGIB15B60KD1P	International Rectifier	Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	96	1000:$2.3200 500:$2.4400 100:$2.5400 25:$2.6500 1:$2.8500
IRGIB15B60KD1P DISTI # 8303271P	Infineon Technologies AG	IGBT 19A 600V ULTRAFAST DIODE TO-220FP, TU	296	10:£2.9700
IRGIB15B60KD1P DISTI # 8303271	Infineon Technologies AG	IGBT 19A 600V ULTRAFAST DIODE TO-220FP, PK	78	2:£3.6250 10:£2.9700
IRGIB15B60KD1P DISTI # 1013530	Infineon Technologies AG	IGBT, TO-220FP RoHS: Compliant	2103	1:$6.3000 10:$5.3500 100:$4.6500 250:$4.4000 500:$3.9600 1000:$3.3400 2500:$3.3200
IRGIB15B60KD1P DISTI # 1013530	Infineon Technologies AG	IGBT, TO-220FP RoHS: Compliant	2110	1:£3.4000 10:£2.1100 100:£2.0500 250:£1.9800 500:£1.9200

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IRGIB15B60KD1P OMO.#: OMO-IRGIB15B60KD1P	IGBT Transistors 600V Low-Vceon
	Mfr.#: IRGIB15B60KD1P-EL OMO.#: OMO-IRGIB15B60KD1P-EL-1190	Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P)
	Mfr.#: IRGIB15B60KD1P OMO.#: OMO-IRGIB15B60KD1P-INFINEON-TECHNOLOGIES	IGBT Transistors 600V Low-Vceon
	Mfr.#: IRGIB15B60KD1 OMO.#: OMO-IRGIB15B60KD1-1190	नयाँ र मौलिक
	Mfr.#: IRGIB15B60KD1PBF OMO.#: OMO-IRGIB15B60KD1PBF-1190	नयाँ र मौलिक
	Mfr.#: IRGIB15B60KD1PBF,GIB15B6 OMO.#: OMO-IRGIB15B60KD1PBF-GIB15B6-1190	नयाँ र मौलिक
	Mfr.#: IRGIB15B60KD1PBF. OMO.#: OMO-IRGIB15B60KD1PBF--1190	नयाँ र मौलिक
	Mfr.#: IRGIB15B60KD1PINFINEON OMO.#: OMO-IRGIB15B60KD1PINFINEON-1190	नयाँ र मौलिक

उपलब्धता

स्टक:: Available
अर्डर मा:: 4000
मात्रा प्रविष्ट गर्नुहोस्:

IRGIB15B60KD1P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ २.७८~~; ~~US$ २.७८~~

10: ~~US$ २.६४~~; ~~US$ २६.४०~~

100: ~~US$ २.५०~~; ~~US$ २५०.१३~~

500: ~~US$ २.३६~~; ~~US$ १ १८१.१५~~

1000: ~~US$ २.२२~~; ~~US$ २ २२३.४०~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IRGIB15B60KD1P 6
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IRGIB15B60KD1P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes