IXGH30N120BD1

Mfr. #:: IXGH30N120BD1
निर्माता:: IXYS
विवरण:: MOSFET 50 Amps 1200V 3.5 V Rds
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IXGH30N120BD1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता: IXYS

उत्पादन कोटि: IGBTs - एकल

शृङ्खला: IXGH30N120

प्याकेजिङ: ट्यूब

एकाइ - वजन: 0.229281 oz

माउन्टिङ-शैली: प्वाल मार्फत

प्याकेज-केस: TO-247-3

प्रविधि: सि

इनपुट-प्रकार: मानक

माउन्टिङ-प्रकार: प्वाल मार्फत

आपूर्तिकर्ता-उपकरण-प्याकेज: TO-247AD (IXGH)

पावर-अधिकतम: -

उल्टो-रिकभरी-समय-trr: -

वर्तमान-कलेक्टर-आईसी-मैक्स: 50A

भोल्टेज-कलेक्टर-एमिटर-ब्रेकडाउन-अधिकतम: 1200V

IGBT-प्रकार: -

वर्तमान-कलेक्टर-स्पंद-आईसीएम: -

Vce-on-Max-Vge-Ic: -

स्विचिङ-ऊर्जा: -

गेट चार्ज: -

Td-on-off-25°C: -

परीक्षण अवस्था: -

आईडी-निरन्तर-नाली-वर्तमान: 50 A

Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज: 1200 V

Tags: IXGH30N12, IXGH30N1, IXGH30, IXGH3, IXGH, IXG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXGH30N120BD1 विवरण

***i-Key: IGBT 1200V 50A TO247

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-

***icroelectronics: Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/25 FAST IGBT FSII T

***i-Key: IGBT FIELD STOP 1200V 50A TO247

***icroelectronics: Trench gate field-stop IGBT, S series 1200 V, 25 A low drop

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of P

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IXGH30N120BD1 DISTI # IXGH30N120BD1-ND	IXYS Corporation	IGBT 1200V 50A TO247 RoHS: Compliant Min Qty: 30 Container: Tube	Temporarily Out of Stock	30:$10.7193
IXGH30N120BD1 DISTI # 747-IXGH30N120BD1	IXYS Corporation	MOSFET 50 Amps 1200V 3.5 V Rds RoHS: Compliant	0

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: IXGH30N120H OMO.#: OMO-IXGH30N120H-1190	नयाँ र मौलिक
	Mfr.#: IXGH30N140A3 OMO.#: OMO-IXGH30N140A3-1190	नयाँ र मौलिक
	Mfr.#: IXGH30N60AU1 OMO.#: OMO-IXGH30N60AU1-1190	नयाँ र मौलिक
	Mfr.#: IXGH30N60BD1 OMO.#: OMO-IXGH30N60BD1-IXYS-CORPORATION	IGBT 600V 60A 200W TO247
	Mfr.#: IXGH30N60BU1 OMO.#: OMO-IXGH30N60BU1-IXYS-CORPORATION	IGBT 600V 60A 200W TO247AD
	Mfr.#: IXGH30N60C2 OMO.#: OMO-IXGH30N60C2-IXYS-CORPORATION	IGBT 600V 70A 190W TO247
	Mfr.#: IXGH30N60CD1 OMO.#: OMO-IXGH30N60CD1-1190	नयाँ र मौलिक
	Mfr.#: IXGH30N60U1 OMO.#: OMO-IXGH30N60U1-1190	MOSFET 30 Amps 600V
	Mfr.#: IXGH30N60C3 OMO.#: OMO-IXGH30N60C3-IXYS-CORPORATION	IGBT Modules 30 Amps 600V
	Mfr.#: IXGH30N60C3D1 OMO.#: OMO-IXGH30N60C3D1-IXYS-CORPORATION	IGBT Modules High Frequency Range 40khz C-IGBT w/Diode

उपलब्धता

स्टक:: Available
अर्डर मा:: 1500
मात्रा प्रविष्ट गर्नुहोस्:

IXGH30N120BD1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १६.०८~~; ~~US$ १६.०८~~

10: ~~US$ १५.२८~~; ~~US$ १५२.७५~~

100: ~~US$ १४.४७~~; ~~US$ १ ४४७.११~~

500: ~~US$ १३.६७~~; ~~US$ ६ ८३३.५५~~

1000: ~~US$ १२.८६~~; ~~US$ १२ ८६३.२०~~

बाट सुरु गर्नुहोस्

IXGH30N12 6
IXGH30N1 7
IXGH30 26
IXGH3 61
IXGH 234
IXG 768

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IXGH30N120BD1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes