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SIA417DJ-T1-GE3

SIA417DJ-T1-GE3
Mfr. #:
SIA417DJ-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIA417DJ-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIA417DJ-T1-GE3 DatasheetSIA417DJ-T1-GE3 Datasheet (P4-P6)SIA417DJ-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SC70-6
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
0.75 mm
लम्बाइ:
2.05 mm
शृङ्खला:
SIA
चौडाइ:
2.05 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SIA417DJ-GE3
एकाइ वजन:
0.070548 oz
Tags
SIA417, SIA41, SIA4, SIA
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
P CHANNEL MOSFET, -8V, 12A, SC-70
***i-Key
MOSFET P-CH 8V 12A SC70-6
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-12000mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):0.095ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
***ment14 APAC
P CHANNEL MOSFET, -8V, 12A, SC-70; Trans; P CHANNEL MOSFET, -8V, 12A, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:-1V; No. of Pins:6
भाग # Mfg। विवरण स्टक मूल्य
SIA417DJ-T1-GE3
DISTI # SIA417DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SIA417DJ-T1-GE3
    DISTI # SIA417DJ-T1-GE3CT-ND    		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SIA417DJ-T1-GE3
      DISTI # SIA417DJ-T1-GE3DKR-ND      		Vishay SiliconixMOSFET P-CH 8V 12A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SIA417DJ-T1-GE3
        DISTI # 781-SIA417DJ-T1-GE3        		Vishay IntertechnologiesMOSFET 8.0V 12A 19W 23mohm @ 4.5V
        RoHS: Compliant        		0
          SIA417DJ-T1-GE3Vishay SiliconixPOWER FIELD-EFFECT TRANSISTOR, 12A I(D), 8V, 0.023OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET2895
          • 2561:$0.2750
          • 572:$0.3125
          • 1:$1.0000
          छवि भाग # विवरण
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3

          		 MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          SIA417DJ-T1-GE3

          Mfr.#: SIA417DJ-T1-GE3

          OMO.#: OMO-SIA417DJ-T1-GE3-VISHAY

          		 IGBT Transistors MOSFET 8.0V 12A 19W 23mohm @ 4.5V
          SIA417DJ-T1

          Mfr.#: SIA417DJ-T1

          OMO.#: OMO-SIA417DJ-T1-1190

          		 नयाँ र मौलिक
          SIA417DJ-T1-E3

          Mfr.#: SIA417DJ-T1-E3

          OMO.#: OMO-SIA417DJ-T1-E3-1190

          		 MOSFET RECOMMENDED ALT 78-SIA427ADJ-T1-GE3
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          3500
          मात्रा प्रविष्ट गर्नुहोस्:
          SIA417DJ-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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