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SQJ942EP-T1_GE3

SQJ942EP-T1_GE3
Mfr. #:
SQJ942EP-T1_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V 15A AEC-Q101 Qualified
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJ942EP-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ942EP-T1_GE3 DatasheetSQJ942EP-T1_GE3 Datasheet (P4-P6)SQJ942EP-T1_GE3 Datasheet (P7-P9)SQJ942EP-T1_GE3 Datasheet (P10-P12)SQJ942EP-T1_GE3 Datasheet (P13-P14)
ECAD Model:
थप जानकारी:
SQJ942EP-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK-SO-8L-4
च्यानलहरूको संख्या:
2 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
15 A, 45 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
18 mOhms, 9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
19.7 nC, 33.8 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
17 W, 48 W
कन्फिगरेसन:
दोहोरो
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.04 mm
लम्बाइ:
6.15 mm
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
2 N-Channel
चौडाइ:
5.13 mm
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
46 S, 73 S
पतन समय:
12 ns, 16 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
25 ns, 31 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
29 ns, 52 ns
सामान्य टर्न-अन ढिलाइ समय:
33 ns, 40 ns
एकाइ वजन:
0.017870 oz
Tags
SQJ942, SQJ94, SQJ9, SQJ
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 15A/45A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***et Europe
Dual N-Channel MOSFETs in 5 mm x 6 mm PowerPAK, 40 V, 11 mΩ / 22 mΩ
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
DUAL N-CHANNEL 40-V (D-S) 175C MOSFET
***i-Key
MOSFET 2 N-CH 40V POWERPAK SO8
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
छवि भाग # विवरण
SQJ942EP-T1_GE3

Mfr.#: SQJ942EP-T1_GE3

OMO.#: OMO-SQJ942EP-T1-GE3-35F

 MOSFET 40V 15A AEC-Q101 Qualified
SQJ942EP-T1-GE3

Mfr.#: SQJ942EP-T1-GE3

OMO.#: OMO-SQJ942EP-T1-GE3-74F

 MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3
SQJ942EP-T1-GE3

Mfr.#: SQJ942EP-T1-GE3

OMO.#: OMO-SQJ942EP-T1-GE3-1190

 MOSFET RECOMMENDED ALT 78-SQJ942EP-T1_GE3
SQJ942EPT1GE3

Mfr.#: SQJ942EPT1GE3

OMO.#: OMO-SQJ942EPT1GE3-1190

 Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
SQJ942EP-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.००
US$ १.००
10
US$ ०.८३
US$ ८.२९
100
US$ ०.६४
US$ ६३.६०
500
US$ ०.५५
US$ २७३.५०
1000
US$ ०.४३
US$ ४३१.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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