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SIHB24N65E-GE3

SIHB24N65E-GE3
Mfr. #:
SIHB24N65E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB24N65E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB24N65E-GE3 DatasheetSIHB24N65E-GE3 Datasheet (P4-P6)SIHB24N65E-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SIHB24N65E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
700 V
आईडी - निरन्तर ड्रेन वर्तमान:
24 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
145 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
81 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
250 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ब्रान्ड:
Vishay / Siliconix
पतन समय:
69 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
84 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
70 ns
सामान्य टर्न-अन ढिलाइ समय:
24 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB24, SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
***et
Trans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 650V, 24A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB24N65E-GE3
DISTI # 26884872		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		272
  • 22:$3.6462
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 24A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		992In Stock
  • 3000:$2.9745
  • 1000:$3.1311
  • 100:$4.3612
  • 25:$5.0320
  • 10:$5.3230
  • 1:$5.9300
SIHB24N65E-GE3
DISTI # V36:1790_09219020		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000:$2.9040
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Rail/Tube (Alt: SIHB24N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$2.7308
  • 6000:$2.8063
  • 4000:$2.8862
  • 2000:$3.0085
  • 1000:$3.1004
SIHB24N65E-GE3
DISTI # SIHB24N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK (Alt: SIHB24N65E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.1900
  • 100:€2.2900
  • 500:€2.2900
  • 50:€2.3900
  • 25:€2.6900
  • 10:€3.2900
  • 1:€4.1900
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesTrans MOSFET N-CH 650V 24A 3-Pin(2+Tab) D2PAK - Product that comes on tape, but is not reeled (Alt: 68W7035)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 500:$4.4500
  • 250:$4.9400
  • 100:$5.0900
  • 50:$5.4500
  • 25:$5.8300
  • 10:$6.1900
  • 1:$7.4600
SIHB24N65E-GE3
DISTI # 68W7036		Vishay IntertechnologiesMOSFET, N CH, 650V, 24A, TO-263-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
  • 20000:$2.6200
  • 12000:$2.6700
  • 8000:$2.7700
  • 4000:$2.9900
  • 2000:$3.2000
  • 1:$3.3500
SIHB24N65E-GE3
DISTI # 68W7035		Vishay IntertechnologiesMOSFET, N CHANNEL, 650V, 24A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.12ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes272
  • 1:$2.3700
  • 10:$2.3700
  • 25:$2.3700
  • 50:$2.3700
  • 100:$2.3700
  • 250:$2.3700
SIHB24N65E-GE3
DISTI # 78-SIHB24N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		2950
  • 1:$5.9600
  • 10:$4.9400
  • 100:$4.0600
  • 250:$3.9400
  • 500:$3.5300
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-E3
DISTI # 781-SIHB24N65E-E3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$2.9800
  • 2000:$2.8300
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK
RoHS: Compliant		1258
  • 3000:$4.5000
  • 1000:$4.7200
  • 100:$6.5800
  • 25:$7.5900
  • 10:$8.0300
  • 1:$8.9400
SIHB24N65E-GE3
DISTI # 2283632		Vishay IntertechnologiesMOSFET, N-CH, 650V, 24A, D2PAK1269
  • 500:£2.8200
  • 250:£3.0400
  • 100:£3.1300
  • 10:£3.8100
  • 1:£5.0700
SIHB24N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
  • 10:$3.8640
छवि भाग # विवरण
MAX31865ATP+

Mfr.#: MAX31865ATP+

OMO.#: OMO-MAX31865ATP-

 Data Acquisition ADCs/DACs - Specialized MAX31865ATP+
MCP1501-20E/SN

Mfr.#: MCP1501-20E/SN

OMO.#: OMO-MCP1501-20E-SN

 Voltage References High Prec Buffered Voltage Reference
FDD4685-F085

Mfr.#: FDD4685-F085

OMO.#: OMO-FDD4685-F085

 MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab
FDP22N50N

Mfr.#: FDP22N50N

OMO.#: OMO-FDP22N50N

 MOSFET UniFETII 500V 22A
STP10NM60N

Mfr.#: STP10NM60N

OMO.#: OMO-STP10NM60N

 MOSFET N-channel 600 V Mdmesh 8A
STPS41H100CG-TR

Mfr.#: STPS41H100CG-TR

OMO.#: OMO-STPS41H100CG-TR

 Schottky Diodes & Rectifiers 2X20 Amp 100 Volt
TC1240ECHTR

Mfr.#: TC1240ECHTR

OMO.#: OMO-TC1240ECHTR

 Switching Voltage Regulators Positive Doubling
CSTNE16M0V530000R0

Mfr.#: CSTNE16M0V530000R0

OMO.#: OMO-CSTNE16M0V530000R0

 Resonators 16.0000MHz 15pF SMD CHP Resntr
NUCLEO-F207ZG

Mfr.#: NUCLEO-F207ZG

OMO.#: OMO-NUCLEO-F207ZG

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F207ZG MCU, supports Arduino, ST Zio and morpho connectivity
STP10NM60N

Mfr.#: STP10NM60N

OMO.#: OMO-STP10NM60N-STMICROELECTRONICS

 Darlington Transistors MOSFET N-channel 600 V Mdmesh 8A
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
SIHB24N65E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.९६
US$ ५.९६
10
US$ ४.९४
US$ ४९.४०
100
US$ ४.०६
US$ ४०६.००
250
US$ ३.९४
US$ ९८५.००
500
US$ ३.५३
US$ १ ७६५.००
1000
US$ २.९८
US$ २ ९८०.००
2000
US$ २.८३
US$ ५ ६६०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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