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FCH041N65EFL4

FCH041N65EFL4
Mfr. #:
FCH041N65EFL4
निर्माता:
ON Semiconductor / Fairchild
विवरण:
MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FCH041N65EFL4 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
FCH041N65EFL4 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-4
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
76 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
41 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
20 V, 30 V
Qg - गेट चार्ज:
229 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
595 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
SuperFET II UniFET FRFET
प्याकेजिङ:
ट्यूब
उचाइ:
22.74 mm
लम्बाइ:
15.8 mm
शृङ्खला:
FCH041N65EFL4
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
5.2 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
71.7 S
पतन समय:
48 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
65 ns
कारखाना प्याक मात्रा:
450
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
175 ns
सामान्य टर्न-अन ढिलाइ समय:
55 ns
एकाइ वजन:
0.221838 oz
Tags
FCH041N65E, FCH041N65, FCH041, FCH04, FCH0, FCH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L
***ark
SuperFET2 650V FRFET with TO247_4L project - 4LD, TO247, NON JEDEC, MOLDED
***ical
N-Channel SuperFET® II FRFET® MOSFET
***et Europe
N-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube
***i-Key
SUPERFET2 650V FRFET
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
SuperFET® II Power MOSFETs
ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More
भाग # Mfg। विवरण स्टक मूल्य
FCH041N65EFL4
DISTI # V99:2348_16116265		ON SemiconductorSUPERFET2 650V FRFET WITH TO24145
  • 1000:$6.0090
  • 500:$6.4130
  • 250:$7.3910
  • 100:$7.7380
  • 25:$8.8950
  • 10:$9.2360
  • 1:$10.3130
FCH041N65EFL4
DISTI # V36:1790_16116265		ON SemiconductorSUPERFET2 650V FRFET WITH TO240
  • 450000:$5.2870
  • 225000:$5.2950
  • 45000:$6.6720
  • 4500:$9.8030
  • 450:$10.3700
FCH041N65EFL4
DISTI # FCH041N65EFL4OS-ND		ON SemiconductorMOSFET N-CH 650V 76A
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 900:$7.1001
  • 450:$7.7872
  • 25:$9.3904
  • 10:$9.8490
  • 1:$10.9000
FCH041N65EFL4
DISTI # 25895792		ON SemiconductorSUPERFET2 650V FRFET WITH TO24145
  • 2:$10.3130
FCH041N65EFL4
DISTI # FCH041N65EFL4		ON SemiconductorN-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube - Bulk (Alt: FCH041N65EFL4)
Min Qty: 49
Container: Bulk		Americas - 0
  • 490:$6.2900
  • 245:$6.4900
  • 147:$6.5900
  • 49:$6.6900
  • 98:$6.6900
FCH041N65EFL4
DISTI # FCH041N65EFL4		ON SemiconductorN-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube - Rail/Tube (Alt: FCH041N65EFL4)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$5.2900
  • 1800:$5.4900
  • 2700:$5.4900
  • 900:$5.5900
  • 450:$5.6900
FCH041N65EFL4
DISTI # FCH041N65EFL4		ON SemiconductorN-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube (Alt: FCH041N65EFL4)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€5.0900
  • 500:€5.4900
  • 100:€5.6900
  • 50:€5.8900
  • 25:€6.0900
  • 10:€6.3900
  • 1:€6.9900
FCH041N65EFL4
DISTI # 512-FCH041N65EFL4		ON SemiconductorMOSFET 650V 76A NChn MOSFET SuperFET II, FRFET
RoHS: Compliant		296
  • 1:$10.3700
  • 10:$9.3700
  • 25:$8.9400
  • 100:$7.7600
  • 250:$7.4100
  • 500:$6.7600
  • 1000:$5.8800
FCH041N65EFL4Fairchild Semiconductor Corporation 
RoHS: Not Compliant		682
  • 1000:$6.3800
  • 500:$6.7200
  • 100:$6.9900
  • 25:$7.2900
  • 1:$7.8500
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उपलब्धता
स्टक:
296
अर्डर मा:
2279
मात्रा प्रविष्ट गर्नुहोस्:
FCH041N65EFL4 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
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10
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25
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100
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500
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1000
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