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MSC080SMA120J

MSC080SMA120J
Mfr. #:
MSC080SMA120J
निर्माता:
Microchip / Microsemi
विवरण:
MOSFET UNRLS, FG, SIC MOSFET, SOT-227
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
MSC080SMA120J डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
MSC080SMA120J थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
चेसिस माउन्ट
प्याकेज / केस:
SOT-227-4
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1.2 kV
Rds अन - ड्रेन-स्रोत प्रतिरोध:
100 mOhms
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1
उपश्रेणी:
MOSFETs
Tags
MSC080S, MSC08, MSC0, MSC
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Schottky Barrier Diodes
Microsemi / Microchip SiC Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon power diodes. SiC (Silicon Carbide) Barrier Diodes are comprised of Silicon (Si) and Carbon (C). Compared to Silicon-only devices, SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity. SiC Schottky Diodes feature zero forward and reverse recovery charge, which reduces diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.
Next Generation SiC MOSFETs
Microsemi / Microchip Next Generation Silicon Carbide (SiC) MOSFETs provide good dynamic and thermal performance compared to the Silicon (Si) power MOSFETs. These MOSFETs come with low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs are capable of stable operation at 175°C high junction temperature. These MOSFETs provide high-efficiency with low switching losses. The SiC MOSFETs does not require any freewheeling diodes and reduces the system cost. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply as well as distribution.
छवि भाग # विवरण
MSC080SMA120J

Mfr.#: MSC080SMA120J

OMO.#: OMO-MSC080SMA120J

 MOSFET UNRLS, FG, SIC MOSFET, SOT-227
MSC080SMA120S

Mfr.#: MSC080SMA120S

OMO.#: OMO-MSC080SMA120S-1190

 Transistor MOSFET N-CH 1200V 35A 3-Pin D3PAK Tube (Alt: MSC080SMA120S)
MSC0805C-39NJ

Mfr.#: MSC0805C-39NJ

OMO.#: OMO-MSC0805C-39NJ-1190

 नयाँ र मौलिक
MSC0805C-56NM

Mfr.#: MSC0805C-56NM

OMO.#: OMO-MSC0805C-56NM-1190

 नयाँ र मौलिक
MSC0805C-R10J

Mfr.#: MSC0805C-R10J

OMO.#: OMO-MSC0805C-R10J-1190

 नयाँ र मौलिक
MSC080SMA120B

Mfr.#: MSC080SMA120B

OMO.#: OMO-MSC080SMA120B-1190

 MOSFET N-CH 1200V TO247
उपलब्धता
स्टक:
Available
अर्डर मा:
3000
मात्रा प्रविष्ट गर्नुहोस्:
MSC080SMA120J को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ४८.२३
US$ ४८.२३
5
US$ ४६.९७
US$ २३४.८५
10
US$ ४५.१०
US$ ४५१.००
25
US$ ४३.५२
US$ १ ०८८.००
50
US$ ४१.२८
US$ २ ०६४.००
100
US$ ३८.७५
US$ ३ ८७५.००
250
US$ ३६.२१
US$ ९ ०५२.५०
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