IRFS7534TRL7PP

IRFS7534TRL7PP
Mfr. #:
IRFS7534TRL7PP
निर्माता:
Infineon / IR
विवरण:
MOSFET MOSFET N CH 60V 240A D2PAK
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFS7534TRL7PP डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IRFS7534TRL7PP थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-7
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
60 V
आईडी - निरन्तर ड्रेन वर्तमान:
240 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
1.6 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.7 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
200 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
290 W
कन्फिगरेसन:
एकल
व्यापार नाम:
बलियो IRFET
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon / IR
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
190 S
पतन समय:
86 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
120 ns
कारखाना प्याक मात्रा:
800
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
195 ns
सामान्य टर्न-अन ढिलाइ समय:
140 ns
भाग # उपनाम:
SP001573434
एकाइ वजन:
0.056438 oz
Tags
IRFS7534T, IRFS7534, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
MOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***ure Electronics
Single N-Channel 60 V 1.95 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
*** Electronic Components
Darlington Transistors MOSFET MOSFET N CH 60V 240A D2PAK
*** Stop Electro
Power Field-Effect Transistor, 240A I(D), 60V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
*** Source Electronics
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***roFlash
Single N-Channel 60 V 1.4 mOhm 354 nC HEXFET® Power Mosfet - D2PAK-7
***(Formerly Allied Electronics)
MOSFET, 60V,240A, 1.4mOhm, 236nC, D2PAK7 Pin
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 338A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 338A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***ark
Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V
*** Source Electronics
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
***ure Electronics
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
Automotive-grade N-channel 60 V, 1.6 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 60V 180A 6-Pin H2PAK T/R
***icroelectronics SCT
Automotive Power Discrete, 60V, 180A, H2PAK-6, Tape and Reel
***el Electronic
CAP CERAMIC DISK RDL LONG LEADS
***(Formerly Allied Electronics)
IRFS3006-7PPBF N-channel MOSFET Transistor; 293 A; 60 V; 7-Pin D2PAK
***ure Electronics
Single N-Channel 60 V 2.1 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
***roFlash
Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:240A; On Resistance Rds(On):0.0015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ure Electronics
FDB0170N607L Series 60 V 300 A 1.4 mOhm N-Channel Power Trench Mosfet - D2PAK-7
***emi
N-Channel PowerTrench® MOSFET 60V, 300A, 1.4mΩ
***r Electronics
Power Field-Effect Transistor, 300A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***el Electronic
Chip Resistor - Surface Mount 160kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 160K OHM 1% 1/10W 0402
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
भाग # Mfg। विवरण स्टक मूल्य
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPTR-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
On Order
  • 800:$1.7078
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPCT-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PPDKR-ND
Infineon Technologies AGMOSFET N CH 60V 240A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 100:$2.4039
  • 10:$2.9320
  • 1:$3.2800
IRFS7534TRL7PP
DISTI # IRFS7534TRL7PP
Infineon Technologies AGTrans MOSFET N-CH 60V 255A 7-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7534TRL7PP)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.1929
  • 1600:$1.1499
  • 3200:$1.1079
  • 4800:$1.0709
  • 8000:$1.0519
IRFS7534TRL7PP
DISTI # 49X0792
Infineon Technologies AGMOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V RoHS Compliant: Yes0
  • 1:$2.7400
  • 10:$2.3300
  • 25:$2.2300
  • 50:$2.1200
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
IRFS7534TRL7PP
DISTI # 942-IRFS7534TRL7PP
Infineon Technologies AGMOSFET MOSFET N CH 60V 240A D2PAK
RoHS: Compliant
27
  • 1:$2.7400
  • 10:$2.3300
  • 100:$2.0200
  • 250:$1.9200
  • 500:$1.7200
  • 800:$1.4500
IRFS7534TRL7PP
DISTI # 8208861P
Infineon Technologies AGMOSFET 60V 240A STRONGIRFET D2PAK-7, RL292
  • 20:£2.2450
IRFS7534TRL7PP
DISTI # 2406525
Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant
0
  • 1:$4.3400
  • 10:$3.6900
  • 100:$3.2000
  • 250:$3.0400
  • 500:$2.7200
  • 800:$2.3500
IRFS7534TRL7PP
DISTI # 2406525
Infineon Technologies AGMOSFET, N CH, 60V, 240A, TO-263-7
RoHS: Compliant
0
  • 1:£2.3600
  • 10:£1.7800
  • 100:£1.5500
  • 250:£1.4600
  • 500:£1.2800
छवि भाग # विवरण
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB

Hot Swap Voltage Controllers Hi Side OR-ing FET Cntlr
DRV8302DCA

Mfr.#: DRV8302DCA

OMO.#: OMO-DRV8302DCA

Motor / Motion / Ignition Controllers & Drivers 3-PHASE BRUSHLESS MOTOR PRE-DRIVER
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F

TVS Diodes / ESD Suppressors 600W 48.0V
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7

Schottky Diodes & Rectifiers 1.0A 100V
SDR0805-101KL

Mfr.#: SDR0805-101KL

OMO.#: OMO-SDR0805-101KL

Fixed Inductors 100uH 10% SMD 0805
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911

DIN 41612 Connectors 3P 15A MALE R/A SLDR
SMBJ48A-13-F

Mfr.#: SMBJ48A-13-F

OMO.#: OMO-SMBJ48A-13-F-DIODES

TVS DIODE 48V 77.4V SMB
LM5060MM/NOPB

Mfr.#: LM5060MM/NOPB

OMO.#: OMO-LM5060MM-NOPB-TEXAS-INSTRUMENTS

Hot Swap Voltage Controllers Hi Side OR-ing FET Cntl
09062032911

Mfr.#: 09062032911

OMO.#: OMO-09062032911-HARTING

DIN 41612 Connectors 3P 15A MALE R/A SLDR
DFLS1100-7

Mfr.#: DFLS1100-7

OMO.#: OMO-DFLS1100-7-DIODES

DIODE SCHOTTKY 100V POWERDI123
उपलब्धता
स्टक:
762
अर्डर मा:
2745
मात्रा प्रविष्ट गर्नुहोस्:
IRFS7534TRL7PP को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.७४
US$ २.७४
10
US$ २.३२
US$ २३.२०
100
US$ २.०१
US$ २०१.००
250
US$ १.९१
US$ ४७७.५०
500
US$ १.७१
US$ ८५५.००
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