OMO ElectronicOMO Electronic
Expand menu
नमस्कार, साइन इन गर्नुहोस्मेरो खाता
0 कार्ट

IXFB82N60Q3

IXFB82N60Q3
Mfr. #:
IXFB82N60Q3
निर्माता:
Littelfuse
विवरण:
MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IXFB82N60Q3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB82N60Q3 DatasheetIXFB82N60Q3 Datasheet (P4-P5)
ECAD Model:
थप जानकारी:
IXFB82N60Q3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
IXYS
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
PLUS-264-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
82 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
75 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
275 nC
Pd - शक्ति अपव्यय:
1.56 kW
कन्फिगरेसन:
एकल
व्यापार नाम:
HiPerFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
IXFB82N60Q3
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
IXYS
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
300 ns
कारखाना प्याक मात्रा:
25
उपश्रेणी:
MOSFETs
एकाइ वजन:
0.056438 oz
Tags
IXFB8, IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 600V 82A PLUS264
***S
French Electronic Distributor since 1988
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
भाग # Mfg। विवरण स्टक मूल्य
IXFB82N60Q3
DISTI # IXFB82N60Q3-ND		IXYS CorporationMOSFET N-CH 600V 82A PLUS264
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$26.4012
IXFB82N60Q3
DISTI # 747-IXFB82N60Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
RoHS: Compliant		16
  • 1:$31.0700
  • 5:$29.5200
  • 10:$28.7400
  • 25:$26.4100
  • 50:$25.2800
  • 100:$24.5400
  • 250:$22.5200
IXFB82N60Q3IXYS Corporation 25
    IXFB82N60Q3
    DISTI # IXFB82N60Q3    		IXYS CorporationTransistor: N-MOSFET,Q3-Class,unipolar,600V,82A,1560W,300ns25
    • 1:$32.2600
    • 5:$28.9900
    • 25:$25.6000
    छवि भाग # विवरण
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P

    		 MOSFET 82 Amps 600V 0.75 Ohm Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3

    		 MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60P

    Mfr.#: IXFB82N60P

    OMO.#: OMO-IXFB82N60P-IXYS-CORPORATION

    		 MOSFET N-CH 600V 82A PLUS 264
    IXFB80N50Q2

    Mfr.#: IXFB80N50Q2

    OMO.#: OMO-IXFB80N50Q2-IXYS-CORPORATION

    		 MOSFET 80 Amps 500V 0.06 Rds
    IXFB82N60Q3

    Mfr.#: IXFB82N60Q3

    OMO.#: OMO-IXFB82N60Q3-IXYS-CORPORATION

    		 IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 600V/82A
    उपलब्धता
    स्टक:
    16
    अर्डर मा:
    1999
    मात्रा प्रविष्ट गर्नुहोस्:
    IXFB82N60Q3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३१.०७
    US$ ३१.०७
    5
    US$ २९.५२
    US$ १४७.६०
    10
    US$ २८.७४
    US$ २८७.४०
    25
    US$ २६.४१
    US$ ६६०.२५
    50
    US$ २५.२८
    US$ १ २६४.००
    100
    US$ २४.५४
    US$ २ ४५४.००
    250
    US$ २२.५२
    US$ ५ ६३०.००
    500
    US$ २१.४४
    US$ १० ७२०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
    More Newest Products
    Top