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TK31J60W5,S1VQ

TK31J60W5,S1VQ
Mfr. #:
TK31J60W5,S1VQ
निर्माता:
Toshiba
विवरण:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
TK31J60W5,S1VQ डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31J60W5,S1VQ DatasheetTK31J60W5,S1VQ Datasheet (P4-P6)TK31J60W5,S1VQ Datasheet (P7-P9)TK31J60W5,S1VQ Datasheet (P10)
ECAD Model:
थप जानकारी:
TK31J60W5,S1VQ थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-3PN-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
30.8 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
73 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.7 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
86 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
230 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
DTMOSIV
उचाइ:
20 mm
लम्बाइ:
15.5 mm
शृङ्खला:
TK31J60W5
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.5 mm
ब्रान्ड:
तोशिबा
पतन समय:
8.5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
32 ns
कारखाना प्याक मात्रा:
25
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
165 ns
सामान्य टर्न-अन ढिलाइ समय:
70 ns
एकाइ वजन:
0.245577 oz
Tags
TK31J60W5, TK31J, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
***et
DTMOSIV(WITH FAST DIODE)_600V_88MOHM MAX(VGS=10V)_TO-3P(N)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
भाग # Mfg। विवरण स्टक मूल्य
TK31J60W5,S1VQ
DISTI # V99:2348_13896177		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 2500:$4.3250
  • 1000:$4.4540
  • 500:$5.0500
  • 250:$5.5120
  • 100:$5.9740
  • 25:$6.5600
  • 10:$7.1510
  • 1:$7.8660
TK31J60W5,S1VQ
DISTI # TK31J60W5S1VQ-ND		Toshiba America Electronic ComponentsMOSFET N-CH 600V 30.8A TO-3P(N)
RoHS: Compliant
Min Qty: 25
Container: Tube		Temporarily Out of Stock
  • 25:$7.9152
TK31J60W5,S1VQ
DISTI # 31315828		Toshiba America Electronic ComponentsX35 PB-F POWER MOSFET TRANSIST25
  • 25:$6.5490
  • 10:$7.1380
  • 2:$7.8510
TK31J60W5S1VQ
DISTI # TK31J60W5,S1VQ		Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin SC-65 Bag - Rail/Tube (Alt: TK31J60W5,S1VQ)
RoHS: Compliant
Min Qty: 25
Container: Tube		Americas - 0
  • 25:$5.4900
  • 50:$5.0900
  • 100:$4.7900
  • 150:$4.5900
  • 250:$4.4900
TK31J60W5,S1VQ
DISTI # 757-TK31J60W5S1VQ		Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
RoHS: Compliant		23
  • 1:$10.1000
  • 10:$9.0800
  • 25:$8.2800
  • 50:$8.0700
  • 100:$7.4700
  • 250:$6.8600
  • 500:$6.2600
  • 1000:$5.0000
TK31J60W5S1VQOToshiba America Electronic Components 60
    TK31J60W5,S1VQToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC
    RoHS: Compliant    		Americas -
      TK31J60W5S1VQToshiba America Electronic ComponentsMOSFET N-CH 30.8A 230W FET 600V
      RoHS: Compliant      		Americas -
        TK31J60W5,S1VQ(O)
        DISTI # C1S751201082516        		Toshiba America Electronic ComponentsMOSFETs55
        • 50:$11.9000
        • 10:$14.2000
        • 5:$14.9000
        TK31J60W5,S1VQ
        DISTI # C1S751200875779        		Toshiba America Electronic ComponentsMOSFETs25
        • 25:$6.5490
        • 10:$7.1380
        • 1:$7.8510
        छवि भाग # विवरण
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR

        		 Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dvr
        UCC27531DBVR

        Mfr.#: UCC27531DBVR

        OMO.#: OMO-UCC27531DBVR-TEXAS-INSTRUMENTS

        		 Gate Drivers 2.5-5A 35VMX VDD FET & IGBT Sgl Gate Dv
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        3000
        मात्रा प्रविष्ट गर्नुहोस्:
        TK31J60W5,S1VQ को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ १०.१०
        US$ १०.१०
        10
        US$ ९.०८
        US$ ९०.८०
        25
        US$ ८.२८
        US$ २०७.००
        50
        US$ ८.०७
        US$ ४०३.५०
        100
        US$ ७.४७
        US$ ७४७.००
        250
        US$ ६.८६
        US$ १ ७१५.००
        500
        US$ ६.२६
        US$ ३ १३०.००
        1000
        US$ ५.००
        US$ ५ ०००.००
        2500
        US$ ४.७८
        US$ ११ ९५०.००
        बाट सुरु गर्नुहोस्
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