APT40GR120B2SCD10

APT40GR120B2SCD10
Mfr. #:
APT40GR120B2SCD10
निर्माता:
Microchip / Microsemi
विवरण:
IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
APT40GR120B2SCD10 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
Tags
APT40GR120B, APT40GR, APT40G, APT40, APT4, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 88A 500000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
APT40GR120Bx Series 1200 V 88 A Flange Mount Ultra Fast NPT IGBT® - TO-247-3
***i-Key
IGBT 1200V 88A 500W TO247
***hardson RFPD
POWER IGBT TRANSISTOR
***el Nordic
Contact for details
***ical
Trans IGBT Chip N-CH 1200V 80A 429000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
IHW40N120R3 Series 1200 V 80 A Through Hole Reverse conducting IGBT - PG-TO247-3
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 429W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
***ineon
The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in V CE(sat) and V f; Lowest switching losses, highest efficiency; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents | Target Applications: Induction cooking stoves; Microwave ovens; Rice cookers; Solar; Other soft switching applications
***ical
Trans IGBT Chip N=-CH 1200V 80A 555000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40T120 Series 1200 V 40 A Fs Trench IGBT Through Hole IGBT - TO-247-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***p One Stop Global
Trans IGBT Chip N-CH 1200V 80A 652000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/40A FAST IGBT FSII
***ment14 APAC
TRANSISTOR, IGBT, 2V, 80A, TO-247-3
***i-Key
IGBT TRENCH/FS 1200V 80A TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 1200V 100A 535000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
***ment14 APAC
TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3
***ure Electronics
IGBT Transistors 1200V/50A FAST IGBT FSII
***DA Technology Co., Ltd.
Product Description Demo for Development.
***nell
TRANSISTOR, IGBT, 2.2V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 535W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No.
***ical
Trans IGBT Chip N-CH 1200V 84A 290000mW 3-Pin(3+Tab) ISOPLUS 247
***el Electronic
IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins
***nell
IGBT,1200V,84A,ISOPLUS247; DC Collector Current: 84A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 290W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 290W; Transistor Type: IGBT
***ure Electronics
APT25GR120B Series 1200 V 75 A Trench and Field Stop IGBT - TO-247-3
***et
Ultra Fast NPT IGBT N-Channel 1200V 75A 3-Pin TO-247
***el Electronic
Trans IGBT Chip N-CH 1.2KV 75A 3-Pin(3+Tab) TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
भाग # Mfg। विवरण स्टक मूल्य
APT40GR120B2SCD10
DISTI # APT40GR120B2SCD10-ND
Microsemi CorporationIGBT 1200V 88A 500W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube
Limited Supply - Call
    APT40GR120B2SCD10
    DISTI # 494-40GR120B2SCD10
    Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
    RoHS: Compliant
    30
    • 1:$20.0400
    • 10:$18.2200
    • 25:$16.8500
    • 50:$15.9400
    • 100:$15.4800
    • 250:$14.1200
    • 500:$13.2000
    APT40GR120B2SCD10
    DISTI # APT40GR120B2SCD
    Microsemi CorporationPOWER IGBT TRANSISTOR
    RoHS: Compliant
    0
    • 30:$12.1800
    • 100:$11.8800
    • 500:$11.7300
    छवि भाग # विवरण
    APT40GR120B

    Mfr.#: APT40GR120B

    OMO.#: OMO-APT40GR120B

    IGBT Transistors FG, IGBT, 1200V, 40A, TO-247
    APT40GR120B2D30

    Mfr.#: APT40GR120B2D30

    OMO.#: OMO-APT40GR120B2D30

    IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
    APT40GR120B2SCD10

    Mfr.#: APT40GR120B2SCD10

    OMO.#: OMO-APT40GR120B2SCD10

    IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
    APT40GR120S

    Mfr.#: APT40GR120S

    OMO.#: OMO-APT40GR120S

    IGBT Transistors FG, IGBT, 1200V, 40A, TO-268
    APT40GR120B

    Mfr.#: APT40GR120B

    OMO.#: OMO-APT40GR120B-MICROSEMI

    IGBT Transistors
    APT40GR120B2D30

    Mfr.#: APT40GR120B2D30

    OMO.#: OMO-APT40GR120B2D30-MICROSEMI

    IGBT Transistors
    APT40GR120S

    Mfr.#: APT40GR120S

    OMO.#: OMO-APT40GR120S-MICROSEMI

    IGBT Transistors
    APT40GR120B2SCD10

    Mfr.#: APT40GR120B2SCD10

    OMO.#: OMO-APT40GR120B2SCD10-MICROSEMI

    IGBT 1200V 88A 500W TO247
    उपलब्धता
    स्टक:
    30
    अर्डर मा:
    2013
    मात्रा प्रविष्ट गर्नुहोस्:
    APT40GR120B2SCD10 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २०.०४
    US$ २०.०४
    10
    US$ १८.२२
    US$ १८२.२०
    25
    US$ १६.८५
    US$ ४२१.२५
    50
    US$ १५.९४
    US$ ७९७.००
    100
    US$ १५.४८
    US$ १ ५४८.००
    250
    US$ १४.१२
    US$ ३ ५३०.००
    500
    US$ १३.२०
    US$ ६ ६००.००
    बाट सुरु गर्नुहोस्
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