FGH80N60FDTU

FGH80N60FDTU
Mfr. #:
FGH80N60FDTU
निर्माता:
ON Semiconductor / Fairchild
विवरण:
IGBT Transistors 600V Field Stop
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
FGH80N60FDTU डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
ON अर्धचालक
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
600 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
FGH80N60FD
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
80 A
उचाइ:
20.6 mm
लम्बाइ:
15.6 mm
चौडाइ:
4.7 mm
ब्रान्ड:
सेमीकन्डक्टर / फेयरचाइल्डमा
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
450
उपश्रेणी:
IGBTs
एकाइ वजन:
0.225401 oz
Tags
FGH80N60F, FGH8, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild's field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
***ure Electronics
FGH40N60UFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***-Wing Technology
FAIRCHILD SEMICONDUCTOR FGH40N60UFDTU IGBT Single Transistor, General Purpose, 80 A, 600 V, 290 W, 600 V, TO-247AB, 3 Pins
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,W DIODE,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:290W
*** Source Electronics
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
***ure Electronics
FGH40N60SMD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***nell
IGBT, FIELD STOP, 600V, 40A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Ultra Fast Free Wheeling Diode Through Hole IGBT - TO-247-3
***nell
IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
*** Source Electronics
IGBT 600V 80A 290W TO247 / Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
FGH40N60SFD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
***ical
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
*** Electronics
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
***(Formerly Allied Electronics)
Transistor IGBT N-Ch 600V 60A TO247
***nell
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
*** Services
CoC and 2-years warranty / RFQ for pricing
***S
French Electronic Distributor since 1988
भाग # Mfg। विवरण स्टक मूल्य
FGH80N60FDTU
DISTI # V99:2348_06358999
ON Semiconductor600V, 80A, FIELD STOP IGBT264
  • 250:$2.2710
  • 100:$2.5230
  • 50:$2.9619
  • 25:$3.2300
  • 10:$3.2650
  • 1:$3.5810
FGH80N60FDTU
DISTI # FGH80N60FDTU-ND
ON SemiconductorIGBT 600V 80A 290W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$3.0109
FGH80N60FDTU
DISTI # 31283754
ON Semiconductor600V, 80A, FIELD STOP IGBT4950
  • 450:$2.6860
FGH80N60FDTU
DISTI # 31228822
ON Semiconductor600V, 80A, FIELD STOP IGBT837
  • 125:$3.0336
  • 5:$3.2928
FGH80N60FDTU
DISTI # 31070280
ON Semiconductor600V, 80A, FIELD STOP IGBT264
  • 250:$2.2710
  • 100:$2.5230
  • 50:$2.9619
  • 25:$3.2300
  • 10:$3.2650
  • 3:$3.5810
FGH80N60FDTU
DISTI # FGH80N60FDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FGH80N60FDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.8900
  • 2700:$1.8900
  • 4500:$1.8900
FGH80N60FDTU
DISTI # FGH80N60FDTU
ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Rail (Alt: FGH80N60FDTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.3900
  • 10:€2.1900
  • 25:€2.0900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
FGH80N60FDTU
DISTI # 41T0519
ON SemiconductorIGBT,N CHANNEL,FAST,W/DIO,600V,80A,TO247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):600V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Product Range:-,MSL:- RoHS Compliant: Yes1656
  • 1:$4.3600
  • 10:$3.7300
  • 25:$3.5700
  • 50:$3.4100
  • 100:$3.2600
  • 250:$3.0900
FGH80N60FDTU
DISTI # 512-FGH80N60FDTU
ON SemiconductorIGBT Transistors 600V Field Stop
RoHS: Compliant
381
  • 1:$4.1100
  • 10:$3.4900
  • 100:$3.0300
  • 250:$2.8700
  • 500:$2.5800
FGH80N60FDTUON SemiconductorFGH80N60FD Series 600 V 80 A Flange Mount Field Stop IGBT - TO-247
RoHS: Compliant
439Tube
  • 5:$3.0900
  • 50:$2.7100
  • 250:$2.3200
FGH80N60FDTU
DISTI # 7599305P
ON SemiconductorTRANSISTOR IGBT N-CH 600V 80A TO247, TU661
  • 10:£1.7300
  • 50:£1.6100
  • 150:£1.5100
  • 300:£1.4800
FGH80N60FDTU
DISTI # 7599305
ON SemiconductorTRANSISTOR IGBT N-CH 600V 80A TO247, EA182
  • 1:£3.0500
  • 10:£1.7300
  • 50:£1.6100
  • 150:£1.5100
  • 300:£1.4800
FGH80N60FDTU
DISTI # FGH80N60FDTU
ON SemiconductorTransistor: IGBT,600V,40A,116W,TO247267
  • 1:$4.6800
  • 3:$4.0200
  • 10:$3.2400
  • 30:$2.9100
FGH80N60FDTUON SemiconductorInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
RoHS: Compliant
Europe - 710
    FGH80N60FDTU
    DISTI # 1885740
    ON SemiconductorIGBT,N CH,FAST,W/DIO,600V,80A,TO247
    RoHS: Compliant
    1656
    • 1:$6.5000
    • 10:$5.5300
    • 100:$4.8000
    FGH80N60FDTU
    DISTI # 1885740
    ON SemiconductorIGBT,N CH,FAST,W/DIO,600V,80A,TO247
    RoHS: Compliant
    3837
    • 1:£3.5800
    • 10:£2.7100
    • 100:£2.3700
    • 250:£2.2300
    • 500:£2.0100
    FGH80N60FDTU
    DISTI # XSFP00000021168
    Fairchild Semiconductor Corporation 
    RoHS: Compliant
    295
    • 33:$6.1800
    • 295:$5.6200
    छवि भाग # विवरण
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    600V/60A FIELD STOP IGBT GEN 2
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    FGH80N60FDTU को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ४.११
    US$ ४.११
    10
    US$ ३.४९
    US$ ३४.९०
    100
    US$ ३.०३
    US$ ३०३.००
    250
    US$ २.८७
    US$ ७१७.५०
    500
    US$ २.५८
    US$ १ २९०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
    बाट सुरु गर्नुहोस्
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