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RJH1BF6RDPQ-80#T2

RJH1BF6RDPQ-80#T2
Mfr. #:
RJH1BF6RDPQ-80#T2
निर्माता:
Renesas Electronics
विवरण:
IGBT Transistors IGBT
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
RJH1BF6RDPQ-80#T2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJH1BF6RDPQ-80#T2 DatasheetRJH1BF6RDPQ-80#T2 Datasheet (P4-P6)RJH1BF6RDPQ-80#T2 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
रेनेसास इलेक्ट्रोनिक्स
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेजिङ:
ट्यूब
ब्रान्ड:
रेनेसास इलेक्ट्रोनिक्स
नमी संवेदनशील:
हो
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
Tags
RJH1BF6, RJH1BF, RJH1B, RJH1, RJH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 1.1KV 55A 3-Pin TO-247 Tube
***i-Key
IGBT 1100V 55A 227.2W TO247
*** Electronic Components
IGBT Transistors IGBT
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AC
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
***ark
TUBE / 1200V 55.000A TO-247 ;ROHS COMPLIANT: YES
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***el Electronic
THERMISTOR NTC 10KOHM 3380K 0603
***ment14 APAC
IGBT,N CH,1200V,55A,TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
***et
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AC Tube
***ark
G6.7, 1000V, 20A, TO-247AC, TUBE
***aconductors
Insulated Gate Bipolar Transistors
***el Electronic
DC DC Converters 3 (168 Hours) 1 14-SMD Module Surface Mount Non-Isolated PoL Module ITE (Commercial) -40°C~85°C 0.20Lx0.22W x 0.08 H 5.0mmx5.7mmx2.1mm DC/DC CONVERTR 0.8-5.3V 1.5A SMD
***et
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AD Tube
***ark
G6.7, 1000V, 20A, TO-247AD, TUBE
***el Electronic
FIXED IND 750NH 360MA 1.54 OHM
***ernational Rectifier
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247 package
***ical
Trans IGBT Chip N-CH 1.2KV 55A 3-Pin(3+Tab) TO-247AD
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 55A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
Inductor Variable Wirewound 2500uH 5% 252KHz 25Q-Factor Automotive
***or
IRG7PH35 - DISCRETE IGBT WITHOUT
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ure Electronics
FGA20N120FTD Series 1200 V 40 A Field Stop Trench IGBT-TO-3PN
***ow.cn
Trans IGBT Chip N-CH 1200V 40A 298000mW 3-Pin(3+Tab) TO-3P Tube
***emi
IGBT, 1200V, 20A, Field Stop Trench
***ark
Igbt, 1.2Kv, 40A, 150Deg C, 298W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V N-Chan Trench
***rchild Semiconductor
Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
छवि भाग # विवरण
RJH1BF6RDPQ-80#T2

Mfr.#: RJH1BF6RDPQ-80#T2

OMO.#: OMO-RJH1BF6RDPQ-80-T2

 IGBT Transistors IGBT
RJH1BF6RDPQ-80

Mfr.#: RJH1BF6RDPQ-80

OMO.#: OMO-RJH1BF6RDPQ-80-1190

 नयाँ र मौलिक
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
RJH1BF6RDPQ-80#T2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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