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IKQ75N120CH3XKSA1

IKQ75N120CH3XKSA1
Mfr. #:
IKQ75N120CH3XKSA1
निर्माता:
Infineon Technologies
विवरण:
IGBT Transistors IGBT PRODUCTS
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IKQ75N120CH3XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO247-3-46
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
1200 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
150 A
Pd - शक्ति अपव्यय:
938 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 175 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
150 A
ब्रान्ड:
Infineon टेक्नोलोजीहरू
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
240
उपश्रेणी:
IGBTs
भाग # उपनाम:
IKQ75N120CH3 SP001220142
एकाइ वजन:
0.211644 oz
Tags
IKQ7, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ75N120CH3XKSA1 P-Channel IGBT, 150 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 150A 938000mW 3-Pin(3+Tab) TO-247 Tube
***et Europe
High speed switching series third generation IGBT
***an P&S
High speed switching 3 generation IGBT
***i-Key
IGBT HS SW 1200V 75A TO-247-3
***ronik
IGBT 1200V 75A 2,0V TO247-3
***ark
Igbt, 1.2Kv, 150A, 938W, To-247; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 150A, 938W, TO-247; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:938W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 150A, 938W, TO-247; Corrente di Collettore CC:150A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:938W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
भाग # Mfg। विवरण स्टक मूल्य
IKQ75N120CH3XKSA1
DISTI # V99:2348_17076737		Infineon Technologies AGIKQ75N120CH3XKSA1215
  • 500:$10.3829
  • 250:$10.9290
  • 100:$11.7030
  • 50:$12.5710
  • 25:$12.7780
  • 10:$13.9150
  • 1:$15.0120
IKQ75N120CH3XKSA1
DISTI # V36:1790_17076737		Infineon Technologies AGIKQ75N120CH3XKSA10
  • 240000:$8.7810
  • 120000:$8.7870
  • 24000:$10.0500
  • 2400:$12.9000
  • 240:$13.4100
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3XKSA1-ND		Infineon Technologies AGIGBT HS SW 1200V 75A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		244In Stock
  • 720:$11.4765
  • 240:$12.9011
  • 25:$14.6424
  • 10:$15.2760
  • 1:$16.6200
IKQ75N120CH3XKSA1
DISTI # 33960069		Infineon Technologies AGIKQ75N120CH3XKSA1240
  • 2:$8.8966
IKQ75N120CH3XKSA1
DISTI # 29415937		Infineon Technologies AGIKQ75N120CH3XKSA1215
  • 1:$15.0120
IKQ75N120CH3XKSA1
DISTI # SP001220142		Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: SP001220142)
RoHS: Compliant
Min Qty: 1		Europe - 220
  • 1000:€7.7900
  • 500:€8.3900
  • 100:€8.6900
  • 50:€8.9900
  • 25:€9.3900
  • 10:€9.7900
  • 1:€10.6900
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3XKSA1		Infineon Technologies AGHigh speed switching series third generation IGBT - Rail/Tube (Alt: IKQ75N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$9.4900
  • 1440:$9.6900
  • 960:$9.9900
  • 480:$10.3900
  • 240:$10.7900
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3		Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: IKQ75N120CH3)
RoHS: Compliant
Min Qty: 240		Asia - 0
  • 12000:$9.5417
  • 6000:$9.6640
  • 2400:$9.7895
  • 1200:$9.9183
  • 720:$10.1863
  • 480:$10.4693
  • 240:$10.7684
IKQ75N120CH3XKSA1
DISTI # 93AC7071		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247,DC Collector Current:150A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:938W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes189
  • 500:$10.3300
  • 250:$11.5100
  • 100:$12.0700
  • 50:$13.1200
  • 25:$13.3100
  • 10:$14.1000
  • 1:$15.2200
IKQ75N120CH3XKSA1
DISTI # 726-IKQ75N120CH3XKSA		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		7164
  • 1:$15.0700
  • 10:$13.9600
  • 25:$13.1800
  • 50:$12.9900
  • 100:$11.9500
  • 250:$11.4000
  • 500:$10.2300
IKQ75N120CH3XKSA1
DISTI # 1623288		Infineon Technologies AGIGBT 1200V 75A HIGHSPEED3 DIODE TO-247, TU1079
  • 600:£7.5980
  • 300:£7.7930
  • 150:£8.2930
  • 30:£8.9210
IKQ75N120CH3XKSA1
DISTI # IKQ75N120CH3		Infineon Technologies AGTransistor: IGBT,1.2kV,75A,256W,TO247-3,Series: H383
  • 10:$20.8300
  • 3:$23.5400
  • 1:$26.0100
IKQ75N120CH3XKSA1
DISTI # 2986436		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247
RoHS: Compliant		189
  • 250:$14.2200
  • 100:$14.3700
  • 50:$16.0200
  • 10:$17.1300
  • 5:$17.7500
  • 1:$18.4300
IKQ75N120CH3XKSA1
DISTI # XSKDRABS0032888		Infineon Technologies AG 
RoHS: Compliant		190 in Stock0 on Order
  • 190:$12.0100
  • 60:$12.8600
IKQ75N120CH3XKSA1
DISTI # 2986436		Infineon Technologies AGIGBT, 1.2KV, 150A, 938W, TO-247190
  • 100:£8.6600
  • 50:£9.4100
  • 10:£9.5600
  • 5:£10.9300
  • 1:£11.3100
छवि भाग # विवरण
IKQ75N120CS6XKSA1

Mfr.#: IKQ75N120CS6XKSA1

OMO.#: OMO-IKQ75N120CS6XKSA1

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FFSP05120A

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SF-0603FP015F-2

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SF-0402FP300F-2

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MGJ2D122005SC

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 Isolated DC/DC Converters 2W 12Vin 20/-5Vout 80/40mA SIP
C2M0080120D

Mfr.#: C2M0080120D

OMO.#: OMO-C2M0080120D-WOLFSPEED

 MOSFET N-CH 1200V 31.6A TO247
IKQ75N120CS6XKSA1

Mfr.#: IKQ75N120CS6XKSA1

OMO.#: OMO-IKQ75N120CS6XKSA1-INFINEON-TECHNOLOGIES

 IGBT 1200V 75A TO247-3-46
PCSA1-S5-S5-S

Mfr.#: PCSA1-S5-S5-S

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उपलब्धता
स्टक:
Available
अर्डर मा:
1990
मात्रा प्रविष्ट गर्नुहोस्:
IKQ75N120CH3XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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1
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