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SI7772DP-T1-GE3

SI7772DP-T1-GE3
Mfr. #:
SI7772DP-T1-GE3
निर्माता:
Vishay
विवरण:
MOSFET N-CH 30V 35.6A PPAK SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI7772DP-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SI7772DP-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता
VIS
उत्पादन कोटि
FETs - एकल
प्याकेजिङ
रील
अंश-उपनामहरू
SI7772DP-GE3
एकाइ - वजन
0.017870 oz
माउन्टिङ-शैली
SMD/SMT
प्याकेज-केस
SO-8
प्रविधि
सि
च्यानलहरूको संख्या
1 Channel
कन्फिगरेसन
Schottky डायोड संग एकल
ट्रान्जिस्टर-प्रकार
1 N-Channel
Pd-शक्ति-डिसिपेशन
29.8 W
Vgs-गेट-स्रोत-भोल्टेज
2.5 V
आईडी-निरन्तर-नाली-वर्तमान
35.6 A
Vds-ड्रेन-स्रोत-ब्रेकडाउन-भोल्टेज
30 V
Rds-अन-ड्रेन-स्रोत-प्रतिरोध
13 mOhms
ट्रान्जिस्टर-ध्रुवता
N- च्यानल
Tags
SI77, SI7
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 13 mOhm SMT TrenchFET Gen III Power Mosfet - PowerPAK SO-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,SC DIO,30V,35.6A,SO8PPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):10500µohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.9A; Power Dissipation Pd:3.9W; Voltage Vgs Max:20V
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
भाग # Mfg। विवरण स्टक मूल्य
SI7772DP-T1-GE3
DISTI # V72:2272_09215678		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2938
  • 1000:$0.3135
  • 500:$0.3648
  • 250:$0.4058
  • 100:$0.4252
  • 25:$0.5137
  • 10:$0.5241
  • 1:$0.6158
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8242In Stock
  • 1000:$0.3716
  • 500:$0.4645
  • 100:$0.6271
  • 10:$0.8130
  • 1:$0.9300
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 35.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$0.3270
SI7772DP-T1-GE3
DISTI # 26730596		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R
RoHS: Compliant		5930
  • 3000:$0.2975
  • 1000:$0.3008
  • 500:$0.3273
  • 250:$0.3609
  • 100:$0.3648
  • 25:$0.3925
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 21000
  • 3000:$0.3199
  • 6000:$0.3189
  • 12000:$0.3179
  • 18000:$0.3169
  • 30000:$0.3169
SI7772DP-T1-GE3
DISTI # SI7772DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12.9A 8-Pin PowerPAK SO T/R (Alt: SI7772DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7772DP-T1-GE3
    DISTI # 35R6247    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 35.6A,Transistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Product Range:- RoHS Compliant: Yes0
    • 1:$0.8200
    • 25:$0.6540
    • 50:$0.5760
    • 100:$0.4970
    • 250:$0.4540
    • 500:$0.4100
    • 1000:$0.3430
    SI7772DP-T1-GE3.
    DISTI # 15AC0304    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:35.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:3.9W,No. of Pins:8Pins RoHS Compliant: Yes21000
    • 1:$0.3420
    • 3000:$0.3420
    SI7772DP-T1-GE3
    DISTI # 781-SI7772DP-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		1843
    • 1:$0.8200
    • 10:$0.6540
    • 100:$0.4970
    • 500:$0.4100
    • 1000:$0.3430
    • 3000:$0.3420
    SI7772DP-T1-GE3Vishay Siliconix 2988
      SI7772DP-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		Americas - Stock
        SI7772DP-T1-GE3
        DISTI # C1S803604553529        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		5930
        • 250:$0.3609
        • 100:$0.3648
        • 25:$0.3925
        • 10:$0.4361
        छवि भाग # विवरण
        SI7772DP-T1-GE3

        Mfr.#: SI7772DP-T1-GE3

        OMO.#: OMO-SI7772DP-T1-GE3

        		 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
        SI7772DP-T1-GE3

        Mfr.#: SI7772DP-T1-GE3

        OMO.#: OMO-SI7772DP-T1-GE3-VISHAY

        		 MOSFET N-CH 30V 35.6A PPAK SO-8
        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        4000
        मात्रा प्रविष्ट गर्नुहोस्:
        SI7772DP-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
        सन्दर्भ मूल्य (USD)
        मात्रा
        एकाइ मूल्य
        विस्तार मूल्य
        1
        US$ ०.४४
        US$ ०.४४
        10
        US$ ०.४२
        US$ ४.१९
        100
        US$ ०.४०
        US$ ३९.६६
        500
        US$ ०.३७
        US$ १८७.३०
        1000
        US$ ०.३५
        US$ ३५२.६०
        बाट सुरु गर्नुहोस्
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