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APT27GA90BD15

APT27GA90BD15
Mfr. #:
APT27GA90BD15
निर्माता:
Microchip / Microsemi
विवरण:
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
APT27GA90BD15 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT27GA90BD15 DatasheetAPT27GA90BD15 Datasheet (P4-P6)APT27GA90BD15 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
900 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
2.5 V
अधिकतम गेट एमिटर भोल्टेज:
30 V
25 C मा निरन्तर कलेक्टर वर्तमान:
48 A
Pd - शक्ति अपव्यय:
223 W
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
प्याकेजिङ:
ट्यूब
निरन्तर कलेक्टर वर्तमान आईसी अधिकतम:
48 A
उचाइ:
4.69 mm
लम्बाइ:
20.8 mm
सञ्चालन तापमान दायरा:
- 55 C to + 150 C
चौडाइ:
15.49 mm
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
निरन्तर कलेक्टर वर्तमान:
48 A
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
एकाइ वजन:
1.340411 oz
Tags
APT27, APT2, APT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 900 V 27 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 48A I(C), 900V V(BR)CES, N-Channel, TO-247AD
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PF50WDPBF Series 900 V 28 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
Copacked 900V IGBT in a TO-247AC package with ultrafast 20-100 kHz ultrafast, ultrasoft recovery anti-parallel diode, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.7 V Current release time: 190 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:51A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.25V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cu
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.25V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WDPbF; Fall Time Max:190ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:52ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***et
Trans IGBT Chip N-CH 900V 43A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 7 Combi 900 V 15 A TO-247
***i-Key
IGBT 900V 43A 250W TO247
***hardson RFPD
POWER IGBT TRANSISTOR
***S
new, original packaged
***el Nordic
Contact for details
***p One Stop Global
Trans IGBT Chip N-CH 900V 44A 3-Pin(3+Tab) TO-247
***el Electronic
IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
***i-Key
IGBT 900V 44A 200W C3 TO-247
***ure Electronics
900V, 24A, 2.7Vce, TO-247
***ical
Trans IGBT Chip N-CH 900V 63A 290000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT PT MOS 8 Single 900 V 35 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 63A I(C), 900V V(BR)CES, N-Channel, TO-247
***ure Electronics
IGBT Transistors FG, IGBT, 900V, TO-247
***i-Key
IGBT 900V 140A 750W C3 TO-247
***ure Electronics
900V, 60A, 2.7VCE, TO-247
भाग # Mfg। विवरण स्टक मूल्य
APT27GA90BD15
DISTI # APT27GA90BD15-ND		Microsemi CorporationIGBT 900V 48A 223W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		236In Stock
  • 500:$5.0134
  • 100:$5.9837
  • 25:$6.6304
  • 10:$7.2770
  • 1:$8.0900
APT27GA90BD15
DISTI # APT27GA90BD15		Microchip Technology IncTrans IGBT Chip N-CH 900V 48A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: APT27GA90BD15)
RoHS: Compliant
Min Qty: 83
Container: Tube		Americas - 0
  • 415:$3.7900
  • 830:$3.7900
  • 249:$3.9900
  • 166:$4.0900
  • 83:$4.1900
APT27GA90BD15
DISTI # 494-APT27GA90BD15		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
RoHS: Compliant		79
  • 1:$7.5500
  • 10:$6.7900
  • 25:$6.1900
  • 100:$5.5800
  • 250:$5.0900
  • 500:$4.6500
  • 1000:$4.0600
APT27GA90BD15
DISTI # APT27GA90BD15		Microsemi CorporationPOWER IGBT TRANSISTOR
RoHS: Compliant		230
  • 1:$4.0400
  • 50:$3.9300
  • 100:$3.8900
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उपलब्धता
स्टक:
79
अर्डर मा:
2062
मात्रा प्रविष्ट गर्नुहोस्:
APT27GA90BD15 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ७.५५
US$ ७.५५
10
US$ ६.७९
US$ ६७.९०
25
US$ ६.१९
US$ १५४.७५
100
US$ ५.५८
US$ ५५८.००
250
US$ ५.०९
US$ १ २७२.५०
500
US$ ४.६५
US$ २ ३२५.००
1000
US$ ४.०६
US$ ४ ०६०.००
2500
US$ ३.७३
US$ ९ ३२५.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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