IPI65R190CFD

IPI65R190CFD
Mfr. #:
IPI65R190CFD
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPI65R190CFD डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPI65R190CFD थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-262-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
17.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
190 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
68 nC
Pd - शक्ति अपव्यय:
151 W
कन्फिगरेसन:
एकल
व्यापार नाम:
CoolMOS
प्याकेजिङ:
ट्यूब
उचाइ:
9.45 mm
लम्बाइ:
10.2 mm
शृङ्खला:
CoolMOS CFD2
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.5 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
6.4 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8.4 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPI65R190CFDXKSA1 IPI65R19CFDXK SP000905386
एकाइ वजन:
0.084199 oz
Tags
IPI65R190CF, IPI65R19, IPI65R1, IPI65, IPI6, IPI
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 17.5A TO262
RoHS: Compliant
Min Qty: 500
Container: Tube
Temporarily Out of Stock
  • 500:$2.0267
IPI65R190CFDXKSA1
DISTI # IPI65R190CFDXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI65R190CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.4900
  • 1000:$1.4900
  • 2000:$1.3900
  • 3000:$1.3900
  • 5000:$1.3900
IPI65R190CFDXKSA2
DISTI # IPI65R190CFDXKSA2
Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI65R190CFDXKSA2)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
    IPI65R190CFD
    DISTI # 726-IPI65R190CFD
    Infineon Technologies AGMOSFET N-Ch 650V 17.5A I2PAK-3 CoolMOS CFD2
    RoHS: Compliant
    0
    • 1:$2.9400
    • 10:$2.5000
    • 100:$2.1700
    • 250:$2.0600
    • 500:$1.8500
    IPI65R190CFDXKSA2
    DISTI # 726-IPI65R190CFDXKSA
    Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
    RoHS: Compliant
    0
    • 500:$1.8500
    • 1000:$1.5600
    • 2500:$1.4800
    • 5000:$1.4300
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    IPI65R190CFDXKSA2

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    OMO.#: OMO-IPI65R190C6XKSA1

    MOSFET HIGH POWER_LEGACY
    IPI65R190CFDXKSA1

    Mfr.#: IPI65R190CFDXKSA1

    OMO.#: OMO-IPI65R190CFDXKSA1

    MOSFET HIGH POWER_LEGACY
    IPI65R190CFDXKSA1

    Mfr.#: IPI65R190CFDXKSA1

    OMO.#: OMO-IPI65R190CFDXKSA1-INFINEON-TECHNOLOGIES

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    OMO.#: OMO-IPI65R310CFD-1190

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    IPI65R110CFD

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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2500
    मात्रा प्रविष्ट गर्नुहोस्:
    IPI65R190CFD को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ २.९३
    US$ २.९३
    10
    US$ २.४९
    US$ २४.९०
    100
    US$ २.१६
    US$ २१६.००
    250
    US$ २.०५
    US$ ५१२.५०
    500
    US$ १.८४
    US$ ९२०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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