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SUP10250E-GE3

SUP10250E-GE3
Mfr. #:
SUP10250E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 250V Vds 20V Vgs TO-220
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SUP10250E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUP10250E-GE3 DatasheetSUP10250E-GE3 Datasheet (P4-P6)SUP10250E-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SUP10250E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
250 V
आईडी - निरन्तर ड्रेन वर्तमान:
63 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
25 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
88 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
375 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
ThunderFET
प्याकेजिङ:
ट्यूब
शृङ्खला:
SUP
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
63 S
पतन समय:
72 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
93 ns
कारखाना प्याक मात्रा:
500
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
30 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
एकाइ वजन:
0.063493 oz
Tags
SUP1, SUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 250V 63A 3-Pin(3+Tab) TO-220AB
***i-Key
MOSFET N-CH 250V 63A TO220AB
***ark
N-Channel 250-V (D-S) 175C Mosfet
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
भाग # Mfg। विवरण स्टक मूल्य
SUP10250E-GE3
DISTI # V99:2348_17600399		Vishay IntertechnologiesN-Channel 250 V (D-S) 175 C MOSFET58
  • 100:$2.3090
  • 25:$2.4450
  • 10:$2.6780
  • 1:$3.2296
SUP10250E-GE3
DISTI # V36:1790_17600399		Vishay IntertechnologiesN-Channel 250 V (D-S) 175 C MOSFET0
  • 500000:$1.4170
  • 250000:$1.4210
  • 50000:$1.8700
  • 5000:$2.7400
  • 500:$2.8900
SUP10250E-GE3
DISTI # SUP10250E-GE3-ND		Vishay SiliconixMOSFET N-CH 250V 63A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 5000:$1.3964
  • 2500:$1.4510
  • 500:$1.8110
  • 100:$2.1274
  • 25:$2.4548
  • 10:$2.5960
  • 1:$2.8900
SUP10250E-GE3
DISTI # 29561887		Vishay IntertechnologiesN-Channel 250 V (D-S) 175 C MOSFET58
  • 5:$3.2296
SUP10250E-GE3
DISTI # SUP10250E-GE3		Vishay IntertechnologiesMOSFET N-Channel 250V 63A 3-Pin TO-220AB - Tape and Reel (Alt: SUP10250E-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 5000:$1.2900
  • 1000:$1.3900
  • 2000:$1.3900
  • 500:$1.4900
SUP10250E-GE3
DISTI # 20AC4715		Vishay IntertechnologiesN-CHANNEL 250-V (D-S) 175C MOSFET0
  • 2500:$1.3200
  • 1000:$1.4300
  • 500:$1.6000
  • 100:$1.7700
  • 50:$2.0000
  • 25:$2.1700
  • 10:$2.3400
  • 1:$2.6400
SUP10250E-GE3
DISTI # 78-SUP10250E-GE3		Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs TO-220
RoHS: Compliant		0
  • 1:$2.9100
  • 10:$2.4100
  • 100:$1.9800
  • 250:$1.9200
  • 500:$1.7200
  • 1000:$1.4500
  • 2500:$1.3800
  • 5000:$1.3300
SUP10250E-GE3
DISTI # SUP10250E-GE3		Vishay IntertechnologiesTransistor: N-MOSFET,unipolar,250V,36.3A,125W,TO220AB7
  • 100:$2.2000
  • 25:$2.4500
  • 5:$2.7700
  • 1:$3.0800
छवि भाग # विवरण
SUP10250E-GE3

Mfr.#: SUP10250E-GE3

OMO.#: OMO-SUP10250E-GE3

 MOSFET 250V Vds 20V Vgs TO-220
SUP10250E

Mfr.#: SUP10250E

OMO.#: OMO-SUP10250E-1190

 नयाँ र मौलिक
SUP10250E-GE3

Mfr.#: SUP10250E-GE3

OMO.#: OMO-SUP10250E-GE3-VISHAY

 MOSFET N-CH 250V 63A TO220AB
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
SUP10250E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ २.९१
US$ २.९१
10
US$ २.४१
US$ २४.१०
100
US$ १.९८
US$ १९८.००
250
US$ १.९२
US$ ४८०.००
500
US$ १.७२
US$ ८६०.००
1000
US$ १.४५
US$ १ ४५०.००
2500
US$ १.३८
US$ ३ ४५०.००
5000
US$ १.३३
US$ ६ ६५०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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