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HN1B04FE-GR,LF

HN1B04FE-GR,LF
Mfr. #:
HN1B04FE-GR,LF
निर्माता:
Toshiba
विवरण:
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
HN1B04FE-GR,LF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN1B04FE-GR,LF DatasheetHN1B04FE-GR,LF Datasheet (P4-P6)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
तोशिबा
उत्पादन कोटि:
द्विध्रुवी ट्रान्जिस्टर - BJT
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SOT-563-6
ट्रान्जिस्टर ध्रुवता:
NPN, PNP
कन्फिगरेसन:
दोहोरो
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
50 V
कलेक्टर - आधार भोल्टेज VCBO:
60 V, - 50 V
उत्सर्जक - आधार भोल्टेज VEBO:
5 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
100 mV
अधिकतम DC कलेक्टर वर्तमान:
150 mA
ब्यान्डविथ उत्पादन एफटी प्राप्त गर्नुहोस्:
80 MHz, 80 MHz
अधिकतम परिचालन तापमान:
+ 150 C
शृङ्खला:
HN1B04
DC वर्तमान लाभ hFE अधिकतम:
400
प्याकेजिङ:
रील
ब्रान्ड:
तोशिबा
DC कलेक्टर/बेस गेन hfe न्यूनतम:
120
Pd - शक्ति अपव्यय:
100 mW
उत्पादन प्रकार:
BJTs - द्विध्रुवी ट्रान्जिस्टर
कारखाना प्याक मात्रा:
4000
उपश्रेणी:
ट्रान्जिस्टरहरू
एकाइ वजन:
0.000106 oz
Tags
HN1B04FE-GR, HN1B04FE-G, HN1B04FE, HN1B04, HN1B0, HN1B, HN1
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS NPN/PNP 50V 0.15A ES6
***enic
50V 100mW 150mA 200@2mA,6V 80MHz 100mV@100mA,10mA 1 NPN,1 PNP +150¡æ@(Tj) SOT-666 Bipolar Transistors - BJT ROHS
***el Electronic
IC OPAMP CUR SENS 1.6MHZ SOT23-6
***ical
Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23
***el Electronic
SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB
***enic
30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***or
X34 PB-F SOT-23 TRANSISTOR FOR L
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz
***ical
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***-Wing Technology
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PA1774 - PNP general-purpose transistor
*** Americas
PNP transistor in a SOT416 (SC-75) plastic package
***-Wing Technology
Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz
***p One Stop
Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R
***peria
2PC4617 - NPN general-purpose transistor
***ment14 APAC
TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
***et
Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R
***enic
50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
***
TRANS S-MINI PLN
*** Source Electronics
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM
***enic
50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS
***
VESM PLN ACTIVE
भाग # Mfg। विवरण स्टक मूल्य
HN1B04FE-GR,LF
DISTI # V36:1790_13897437		Toshiba America Electronic ComponentsX34 PB-F ES6 PLN (LF) TRANSIST0
  • 2000000:$0.0267
  • 400000:$0.0343
  • 40000:$0.0503
  • 4000:$0.0531
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFCT-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		15926In Stock
  • 1000:$0.0607
  • 500:$0.0892
  • 250:$0.1047
  • 100:$0.1666
  • 25:$0.2140
  • 10:$0.2970
  • 1:$0.3300
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFDKR-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		15926In Stock
  • 1000:$0.0607
  • 500:$0.0892
  • 250:$0.1047
  • 100:$0.1666
  • 25:$0.2140
  • 10:$0.2970
  • 1:$0.3300
HN1B04FE-GR,LF
DISTI # HN1B04FE-GRLFTR-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP 50V 0.15A ES6
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		8000In Stock
  • 100000:$0.0308
  • 28000:$0.0370
  • 12000:$0.0393
  • 8000:$0.0462
  • 4000:$0.0531
HN1B04FE-GRLF
DISTI # HN1B04FE-GR,LF		Toshiba America Electronic ComponentsTrans GP BJT NPN/PNP 50V 0.15A 6-Pin SC-107C Emboss T/R - Tape and Reel (Alt: HN1B04FE-GR,LF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 40000:$0.0282
  • 24000:$0.0290
  • 16000:$0.0306
  • 8000:$0.0324
  • 4000:$0.0345
HN1B04FE-GR,LF
DISTI # 757-HN1B04FEGRLF		Toshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
RoHS: Compliant		15840
  • 1:$0.3200
  • 10:$0.2040
  • 100:$0.0850
  • 1000:$0.0580
  • 4000:$0.0440
  • 8000:$0.0380
  • 24000:$0.0360
  • 48000:$0.0330
  • 100000:$0.0290
HN1B04FE-GR,LF(BToshiba America Electronic Components 3200
  • 1668:$0.1600
  • 140:$0.2400
  • 1:$0.8000
HN1B04FE-GRLFToshiba America Electronic ComponentsBipolar Transistors - BJTES6 PLN (LF) TRANSISTOR
RoHS: Compliant		Americas -
    HN1B04FE-GR,LFToshiba America Electronic ComponentsBipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
    RoHS: Compliant    		Americas -
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      उपलब्धता
      स्टक:
      15
      अर्डर मा:
      1998
      मात्रा प्रविष्ट गर्नुहोस्:
      HN1B04FE-GR,LF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ०.३२
      US$ ०.३२
      10
      US$ ०.२०
      US$ २.०४
      100
      US$ ०.०८
      US$ ८.५०
      1000
      US$ ०.०६
      US$ ५८.००
      बाट सुरु गर्नुहोस्
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