IPB65R190CFDAATMA1

IPB65R190CFDAATMA1
Mfr. #:
IPB65R190CFDAATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 650V 57.2A D2PAK-2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB65R190CFDAATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IPB65R190CFDAATMA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
17.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
171 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
68 nC
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
151 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
CoolMOS
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
CoolMOS CFDA
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
6.4 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8.4 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
53.2 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
भाग # उपनाम:
IPB65R190CFDA IPB65R19CFDAXT SP000928264
एकाइ वजन:
0.068654 oz
Tags
IPB65R190CFDA, IPB65R190CF, IPB65R19, IPB65R1, IPB65, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 190 mOhm 68 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(2+Tab) TO-263 T/R
***et Europe
MOS Power Transistors HV (>= 200V)
***ronik
N-CH 650V 18A 190mOhm TO263-3
***i-Key
MOSFET N-CH TO263-3
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
भाग # Mfg। विवरण स्टक मूल्य
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.1215
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDAATMA1
Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: IPB65R190CFDAATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.8900
  • 2000:$1.8900
  • 4000:$1.7900
  • 6000:$1.6900
  • 10000:$1.6900
IPB65R190CFDAATMA1
DISTI # SP000928264
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928264)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 1000:€2.3900
  • 2000:€1.8900
  • 4000:€1.6900
  • 6000:€1.6900
  • 10000:€1.4900
IPB65R190CFDAATMA1
DISTI # IPB65R190CFDA
Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPB65R190CFDA)
RoHS: Compliant
Min Qty: 1000
Asia - 0
    IPB65R190CFDAATMA1
    DISTI # 726-IPB65R190CFDAATM
    Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant
    0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
    IPB65R190CFDA
    DISTI # 726-IPB65R190CFDA
    Infineon Technologies AGMOSFET N-Ch 650V 57.2A D2PAK-2
    RoHS: Compliant
    0
    • 1:$3.6500
    • 10:$3.1000
    • 100:$2.6900
    • 250:$2.5500
    • 500:$2.2900
    • 1000:$1.9300
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    IPB65R190CFDAATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.६४
    US$ ३.६४
    10
    US$ ३.१०
    US$ ३१.००
    100
    US$ २.६८
    US$ २६८.००
    250
    US$ २.५४
    US$ ६३५.००
    500
    US$ २.२८
    US$ १ १४०.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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