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| भाग # | Mfg। | विवरण | स्टक | मूल्य |
|---|---|---|---|---|
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3TR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # SI2309DS-T1-E3DKR-ND | Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI2309DS-T1-E3 DISTI # 70026067 | Vishay Siliconix | MOSFET,Power,P-Ch,VDSS -60V,RDS(ON) 0.275Ohm,ID -1.25A,TO-236 (SOT-23),PD 1.25W RoHS: Compliant | 0 |
|
| SI2309DS-T1-E3 DISTI # 781-SI2309DS-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Compliant | 0 | |
| SI2309DS-T1 DISTI # 781-SI2309DS | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 RoHS: Not compliant | 0 |
| छवि | भाग # | विवरण |
|---|---|---|
|
Mfr.#: SI2309DS OMO.#: OMO-SI2309DS |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
|
Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
|
Mfr.#: SI2309DS OMO.#: OMO-SI2309DS-1190 |
MOSFET Plastic-Encapsulated MOSFET P-CH-60V |
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Mfr.#: SI2309DS , M1MA151KT2 OMO.#: OMO-SI2309DS-M1MA151KT2-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI2309DS-T1 OMO.#: OMO-SI2309DS-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI2309CDS-GE3 |
|
Mfr.#: SI2309DS-T1-E3 OMO.#: OMO-SI2309DS-T1-E3-VISHAY |
MOSFET P-CH 60V 1.25A SOT23-3 |
|
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Mfr.#: SI2309DS-T1-GE3 OMO.#: OMO-SI2309DS-T1-GE3-1190 |
P CH MOSFET, Transistor Polarity:P Channel, Continuous Drain Current Id:-1.25A, Drain Source Voltage Vds:-60V, On Resistance Rds(on):275mohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs |
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Mfr.#: SI2309DS-TI OMO.#: OMO-SI2309DS-TI-1190 |
नयाँ र मौलिक |
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Mfr.#: SI2309DS-TI-E3 OMO.#: OMO-SI2309DS-TI-E3-1190 |
नयाँ र मौलिक |
|
|
Mfr.#: SI2309DST1 OMO.#: OMO-SI2309DST1-1190 |
Small Signal Field-Effect Transistor, 0.00125A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 |
