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SI4908DY-T1-GE3

SI4908DY-T1-GE3
Mfr. #:
SI4908DY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 40V 5.0A 2.75W 60mohm @ 10V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4908DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4908DY-T1-GE3 DatasheetSI4908DY-T1-GE3 Datasheet (P4-P6)SI4908DY-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
शृङ्खला:
SI4
चौडाइ:
3.9 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI4908DY-GE3
एकाइ वजन:
0.006596 oz
Tags
SI490, SI49, SI4
Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 40V 4.1A 8-Pin SOIC N T/R
***i-Key
MOSFET 2N-CH 40V 5A 8-SOIC
***ment14 APAC
MOSFET,NN CH,DIODE,40V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:1.85W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Current Id Max:4.1A; Module Configuration:Dual; Operating Temperature Range:-55°C to +150°C
भाग # Mfg। विवरण स्टक मूल्य
SI4908DY-T1-GE3
DISTI # SI4908DY-T1-GE3-ND		Vishay SiliconixMOSFET 2N-CH 40V 5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4908DY-T1-GE3
    DISTI # 781-SI4908DY-GE3    		Vishay IntertechnologiesMOSFET 40V 5.0A 2.75W 60mohm @ 10V
    RoHS: Compliant    		0
      SI4908DY-T1-GE3
      DISTI # 1858967      		Vishay IntertechnologiesMOSFET,NN CH,DIODE,40V,5A,8-SOIC
      RoHS: Compliant      		0
      • 7500:$0.6530
      • 2500:$0.6750
      • 1000:$0.6990
      • 500:$0.7530
      • 250:$0.8700
      • 100:$1.0000
      • 10:$1.2600
      • 1:$1.5600
      छवि भाग # विवरण
      SI4908DY-T1-E3

      Mfr.#: SI4908DY-T1-E3

      OMO.#: OMO-SI4908DY-T1-E3

      		 MOSFET DUAL N-CH 40V(D-S)
      SI4908DY-T1-GE3

      Mfr.#: SI4908DY-T1-GE3

      OMO.#: OMO-SI4908DY-T1-GE3

      		 MOSFET 40V 5.0A 2.75W 60mohm @ 10V
      SI4908DY-T1-E3

      Mfr.#: SI4908DY-T1-E3

      OMO.#: OMO-SI4908DY-T1-E3-VISHAY

      		 MOSFET 2N-CH 40V 5A 8-SOIC
      SI4908DY-T1-GE3

      Mfr.#: SI4908DY-T1-GE3

      OMO.#: OMO-SI4908DY-T1-GE3-VISHAY

      		 MOSFET 2N-CH 40V 5A 8-SOIC
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      SI4908DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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