APT44GA60BD30

APT44GA60BD30
Mfr. #:
APT44GA60BD30
निर्माता:
Microchip / Microsemi
विवरण:
IGBT Transistors FG, IGBT-COMBI, 600V, TO-247
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
APT44GA60BD30 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT44GA60BD30 DatasheetAPT44GA60BD30 Datasheet (P4-P6)APT44GA60BD30 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
माइक्रोचिप
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेजिङ:
ट्यूब
ब्रान्ड:
माइक्रोचिप / माइक्रोसेमी
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
1
उपश्रेणी:
IGBTs
Tags
APT44G, APT44, APT4, APT
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 600V 78A 3-Pin(3+Tab) TO-247
***rochip
IGBT PT MOS 8 Combi 600 V 44 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel, TO-247
***ernational Rectifier
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
***p One Stop
Trans IGBT Chip N-CH 600V 96A 330000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP4063DPbF Series 600 V 48 A N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.14 V Current release time: 35 ns Power dissipation: 330 W
***ark
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:600V; Continuous Collector Current, Ic:96A; Collector Emitter Saturation Voltage, Vce(sat):2.14V; Power Dissipation, Pd:330W ;RoHS Compliant: Yes
***p One Stop Global
Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:55A; Collector Emitter Saturation Voltage, Vce(sat):2.3V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ment14 APAC
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop
Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
IRG4PC50FPBF, IGBT Transistor, 70 A 600V, 3-Pin TO-247AC
***ure Electronics
IRG4PC50 Series 600 V 39 A N-Channel Fast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.6 V Current release time: 230 ns Power dissipation: 200 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:200W; Package/Case:TO-247AC ;RoHS Compliant: Yes
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:70A; Current Temperature:25°C; Fall Time Max:130ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:280A; Rise Time:25ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
New short circuit rugged "K" series
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***(Formerly Allied Electronics)
IGBT N-Channel 30A 600V TO-247
***ark
Igbt, Single, 600V, 60A, To-247-3; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2.1V; Power Dissipation Pd:200W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***DA Technology Co., Ltd.
Product Description Demo for Development.
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 600V, 60A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 600V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 1.55V; Transistor Case Style: TO-247; No. of Pins
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
***nell
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
***ical
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
छवि भाग # विवरण
RJH65T46DPQ-A0#T0

Mfr.#: RJH65T46DPQ-A0#T0

OMO.#: OMO-RJH65T46DPQ-A0-T0

IGBT Transistors IGBT - 650V/40A/TO-247A
APT38N60BC6

Mfr.#: APT38N60BC6

OMO.#: OMO-APT38N60BC6

MOSFET FG, MOSFET, 600V, 38A, TO-247
CMF60100R00JKEA

Mfr.#: CMF60100R00JKEA

OMO.#: OMO-CMF60100R00JKEA

Metal Film Resistors - Through Hole 1W 100ohms 5%
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA

Ceramic Disc Capacitors D: 5.5mm 2kV 22pF SL 5% LS:5mm
APT38N60BC6

Mfr.#: APT38N60BC6

OMO.#: OMO-APT38N60BC6-MICROSEMI

Darlington Transistors MOSFET
CC45SL3DD220JYNNA

Mfr.#: CC45SL3DD220JYNNA

OMO.#: OMO-CC45SL3DD220JYNNA-TDK

Ceramic Disc Capacitors CC45 22pF 2.0KV SL 5% Cut Leads
CMF60100R00JKEA

Mfr.#: CMF60100R00JKEA

OMO.#: OMO-CMF60100R00JKEA-VISHAY-DALE

Metal Film Resistors - Through Hole 1/2W 1W 100ohms 5%
B32654A0474K000

Mfr.#: B32654A0474K000

OMO.#: OMO-B32654A0474K000-EPCOS

CAP, 0.47F, 1 KV, 10%, PP
उपलब्धता
स्टक:
61
अर्डर मा:
2044
मात्रा प्रविष्ट गर्नुहोस्:
APT44GA60BD30 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ८.३०
US$ ८.३०
10
US$ ७.४७
US$ ७४.७०
25
US$ ६.८०
US$ १७०.००
100
US$ ६.१४
US$ ६१४.००
250
US$ ५.६०
US$ १ ४००.००
500
US$ ५.११
US$ २ ५५५.००
1000
US$ ४.४६
US$ ४ ४६०.००
2500
US$ ४.१०
US$ १० २५०.००
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