IPB083N10N3GATMA1

Mfr. #:: IPB083N10N3GATMA1
निर्माता:: Infineon Technologies
विवरण:: MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: IPB083N10N3GATMA1 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: इन्फिनोन

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: TO-263-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 100 V

आईडी - निरन्तर ड्रेन वर्तमान:: 80 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 7.2 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 55 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 125 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: OptiMOS

प्याकेजिङ:: रील

उचाइ:: 4.4 mm

लम्बाइ:: 10 mm

शृङ्खला:: OptiMOS 3

ट्रान्जिस्टर प्रकार:: 1 N-Channel

चौडाइ:: 9.25 mm

ब्रान्ड:: Infineon टेक्नोलोजीहरू

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 45 S

पतन समय:: 8 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 42 ns

कारखाना प्याक मात्रा:: 1000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 31 ns

सामान्य टर्न-अन ढिलाइ समय:: 18 ns

भाग # उपनाम:: G IPB083N10N3 IPB83N1N3GXT SP000458812

एकाइ वजन:: 0.068654 oz

Tags: IPB083N10N3G, IPB083N10, IPB083, IPB08, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB083N10N3GATMA1 विवरण

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***et: Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

***el Electronic: Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ment14 APAC: MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***p One Stop Global: Trans MOSFET N-CH 75V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.1pF 100volts C0G +/-0.25pF

***ment14 APAC: MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:75V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 75V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 75V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

***ineon: The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers

***emi: N-Channel PowerTrench® MOSFET, 40V, 70A, 9mΩ

***ure Electronics: N-Channel 40 V 9 mOhm Surface Mount PowerTrench Mosfet - TO-263AB

***r Electronics: Power Field-Effect Transistor, 70A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ment14 APAC: MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:92W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; External Depth:15.49mm; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:D2-PAK; Power Dissipation Pd:92W; Power Dissipation Pd:92W; SMD Marking:FDB8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

*** Source Electronics: Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET P-CH 100V 33.5A D2PAK

***ure Electronics: P-Channel 100 V 0.06 Ohm Surface Mount Mosfet - D2PAK-3

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33.5mA; On Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ark: MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:55A; Resistance, Rds On:0.026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: No

***nell: MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 155W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 55A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation on 1" Sq. PCB: 3.75W; Pulse Current Idm: 220A; SMD Marking: FQB55N10; Termination Type: Surface Mount Device; Voltage Vds: 100V; Voltage Vds Typ: 100V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
IPB083N10N3GATMA1 DISTI # V72:2272_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB083N10N3GATMA1 DISTI # V36:1790_06383633	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.5242 500000:$0.5246 100000:$0.5797 10000:$0.6897 1000:$0.7088
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.6048 5000:$0.6284 2000:$0.6615 1000:$0.7087
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 80A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2000In Stock	500:$0.9247 100:$1.1194 10:$1.4360 1:$1.6100
IPB083N10N3GXT DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 T/R - Tape and Reel (Alt: IPB083N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.4569 6000:$0.4649 4000:$0.4809 2000:$0.4999 1000:$0.5179
IPB083N10N3GATMA1 DISTI # 47Y8048	Infineon Technologies AG	MOSFET Transistor, N Channel, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V RoHS Compliant: Yes	758	500:$0.8650 250:$0.9210 100:$0.9780 50:$1.0800 25:$1.1700 10:$1.2700 1:$1.4800
IPB083N10N3 G DISTI # 726-IPB083N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	13901	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 726-IPB083N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 RoHS: Compliant	2169	1:$1.4700 10:$1.2600 100:$0.9680 500:$0.8560 1000:$0.6750 2000:$0.5990 10000:$0.5770
IPB083N10N3GATMA1 DISTI # 8977361P	Infineon Technologies AG	MOSFET N-CHANNEL 100V 80A OPTIMOS TO263, RL	3216	2000:£0.4840 800:£0.6140 400:£0.6940 80:£0.9000
IPB083N10N3GATMA1 DISTI # IPB083N10N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,80A,125W,PG-TO263-3	664	500:$0.6081 100:$0.6306 25:$0.6757 5:$0.7523 1:$0.8514
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3	739	500:£0.6670 250:£0.7100 100:£0.7530 10:£1.0300 1:£1.3100
IPB083N10N3GATMA1 DISTI # 2443432	Infineon Technologies AG	MOSFET, N CH, 100V, 80A, TO-263-3 RoHS: Compliant	758	1000:$1.0200 500:$1.2900 100:$1.4600 10:$1.9000 1:$2.2200

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: LM4040D10IDBZR OMO.#: OMO-LM4040D10IDBZR	Voltage References 10-V Prec Micropower Shunt 1% accuracy
	Mfr.#: LM4040D50IDBZT OMO.#: OMO-LM4040D50IDBZT	Voltage References 5V Precision Mcrpwr Shunt 1% acc
	Mfr.#: NSR02100HT1G OMO.#: OMO-NSR02100HT1G	Schottky Diodes & Rectifiers SS SOD323 SHKY DIO 100V T
	Mfr.#: NTSB20100CTT4G OMO.#: OMO-NTSB20100CTT4G	Schottky Diodes & Rectifiers 20A 100V LVFR DUAL D2PAK
	Mfr.#: PQ2617BHA-100K OMO.#: OMO-PQ2617BHA-100K	Fixed Inductors 10uH 10% 28A AEC-Q200 GULL WING
	Mfr.#: EMK212B7475KG-T OMO.#: OMO-EMK212B7475KG-T-TAIYO-YUDEN	Multilayer Ceramic Capacitors MLCC - SMD/SMT STD 0805 X7R 16V 4.7uF 10%
	Mfr.#: LM4040D50IDBZT OMO.#: OMO-LM4040D50IDBZT-TEXAS-INSTRUMENTS	Voltage References 5V Precision Mcrpwr Shunt 1% acc
	Mfr.#: LM4040D10IDBZR OMO.#: OMO-LM4040D10IDBZR-TEXAS-INSTRUMENTS	Voltage References 10-V Prec Micropower Shunt 1% accuracy
	Mfr.#: NTSB20100CTT4G OMO.#: OMO-NTSB20100CTT4G-ON-SEMICONDUCTOR	Schottky Diodes & Rectifiers 20A 100V LVFR DUAL D2PAK
	Mfr.#: PQ2617BHA-100K OMO.#: OMO-PQ2617BHA-100K-BOURNS	INDUCTOR, SHIELDED, 10UH, 10%, AEC-Q200

उपलब्धता

स्टक:: Available
अर्डर मा:: 1985
मात्रा प्रविष्ट गर्नुहोस्:

IPB083N10N3GATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ १.४७~~; ~~US$ १.४७~~

10: ~~US$ १.२६~~; ~~US$ १२.६०~~

100: ~~US$ ०.९७~~; ~~US$ ९६.८०~~

500: ~~US$ ०.८६~~; ~~US$ ४२८.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

IPB083N10N3G 6
IPB083N10 7
IPB083 8
IPB08 23
IPB0 405
IPB 1339

नवीनतम उत्पादनहरू

XC6227 Series Regulator

Torex's XC6227 series is a high-speed LDO regulator with the ability to operate with high accuracy, low noise, and high ripple rejection.
XMC4700 and XMC4800 Family of Microcontrollers

Infineon Technologies’ XMC4700 and XMC4800 devices are members of the XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core.
TLF502x1EL Step-Down DC / DC

Infineon's TLF502x1-family are asynchronous DC / DCs with integrated power transistor providing 500 mA output current at 5 V (±2%).
XC9261 Series Step-Down DC/DC Converters

Torex's 1.5 A synchronous step-down DC/DC converter with high speed transient response control feature that provides excellent load transient response.
Compare IPB083N10N3GATMA1

IPB083N10N3G vs IPB083N10N3G2SD1936T vs IPB083N10N3GATMA1
LITIX™ Automotive LED Driver ICs

LITIX automotive LED driver ICs from Infineon use a constant-current regulator that enables stable brightness over the whole automotive temperature and voltage range.

More Newest Products

IPB083N10N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes