SIHU6N62E-GE3

SIHU6N62E-GE3
Mfr. #:
SIHU6N62E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 620V Vds 30V Vgs IPAK (TO-251)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHU6N62E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHU6N62E-GE3 DatasheetSIHU6N62E-GE3 Datasheet (P4-P6)SIHU6N62E-GE3 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
SIHU6N62E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
620 V
आईडी - निरन्तर ड्रेन वर्तमान:
6 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
900 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
17 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
78 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
6.22 mm
लम्बाइ:
6.73 mm
शृङ्खला:
E
चौडाइ:
2.39 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
16 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
10 ns
कारखाना प्याक मात्रा:
75
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
22 ns
सामान्य टर्न-अन ढिलाइ समय:
12 ns
एकाइ वजन:
0.011640 oz
Tags
SIHU6N6, SIHU6, SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 700 V 900 mO 34 nC Through Hole Power Mosfet - TO-251
***et Europe
Trans MOSFET N-CH 620V 6A 3-Pin IPAK
***nell
MOSFET, N CH, 620V, 6A, TO-251-3
***i-Key
MOSFET N-CH 620V 6A TO-251
***ponent Electronics
TO-251 75PCS/TUBE
***
N-CHANNEL 620V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3-ND
Vishay SiliconixMOSFET N-CH 620V 6A TO-251
Min Qty: 1
Container: Tube
2990In Stock
  • 5025:$0.6650
  • 2550:$0.7000
  • 525:$0.9500
  • 150:$1.1500
  • 75:$1.4000
  • 10:$1.4750
  • 1:$1.6500
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK - Tape and Reel (Alt: SIHU6N62E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6099
  • 18000:$0.6269
  • 12000:$0.6449
  • 6000:$0.6719
  • 3000:$0.6929
SIHU6N62E-GE3
DISTI # SIHU6N62E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 620V 6A 3-Pin IPAK (Alt: SIHU6N62E-GE3)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.5529
  • 500:€0.5599
  • 100:€0.5699
  • 50:€0.5779
  • 25:€0.6539
  • 10:€0.8069
  • 1:€1.1249
SIHU6N62E-GE3
DISTI # 78-SIHU6N62E-GE3
Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2995
  • 1:$1.6600
  • 10:$1.3700
  • 100:$1.0500
  • 500:$0.9050
  • 1000:$0.7150
  • 2500:$0.6670
  • 5000:$0.6340
  • 10000:$0.6100
SIHU6N62E-GE3Vishay Siliconix 2775
    SIHU6N62E-GE3Vishay IntertechnologiesMOSFET 620V Vds 30V Vgs IPAK (TO-251)
    RoHS: Compliant
    Americas -
      छवि भाग # विवरण
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3

      MOSFET 800V Vds 30V Vgs IPAK (TO-251)
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3

      MOSFET 620V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3

      MOSFET 650V Vds 30V Vgs IPAK (TO-251)
      SIHU6N65E-GE3

      Mfr.#: SIHU6N65E-GE3

      OMO.#: OMO-SIHU6N65E-GE3-VISHAY

      RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
      SIHU6N62E-GE3

      Mfr.#: SIHU6N62E-GE3

      OMO.#: OMO-SIHU6N62E-GE3-VISHAY

      RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
      SIHU6N62E

      Mfr.#: SIHU6N62E

      OMO.#: OMO-SIHU6N62E-1190

      नयाँ र मौलिक
      SIHU6N80E-GE3

      Mfr.#: SIHU6N80E-GE3

      OMO.#: OMO-SIHU6N80E-GE3-VISHAY

      MOSFET N-CHAN 800V TO-251
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      1986
      मात्रा प्रविष्ट गर्नुहोस्:
      SIHU6N62E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ १.६६
      US$ १.६६
      10
      US$ १.३७
      US$ १३.७०
      100
      US$ १.०५
      US$ १०५.००
      500
      US$ ०.९०
      US$ ४५२.५०
      1000
      US$ ०.७२
      US$ ७१५.००
      2500
      US$ ०.६७
      US$ १ ६६७.५०
      5000
      US$ ०.६३
      US$ ३ १७०.००
      10000
      US$ ०.६१
      US$ ६ १००.००
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
      बाट सुरु गर्नुहोस्
      नवीनतम उत्पादनहरू
      • SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • Compare SIHU6N62E-GE3
        SIHU6N62E vs SIHU6N62EGE3 vs SIHU6N65EGE3
      • SIRA20DP TrenchFET® Gen IV MOSFET
        Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
      • P-Channel MOSFETs
        Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
      • SiP32452, SiP32453 Load Switch
        Vishay's load switches have a low input logic control threshold and a fast turn on time.
      • PowerPAIR®
        Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
      Top