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SIHG120N60E-GE3

SIHG120N60E-GE3
Mfr. #:
SIHG120N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 650V Vds; 30V Vgs TO-247AC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHG120N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SIHG120N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247AC-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
25 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
120 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
45 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
179 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
शृङ्खला:
E
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
6 S
पतन समय:
33 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
65 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
31 ns
सामान्य टर्न-अन ढिलाइ समय:
19 ns
Tags
SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHG120N60E-GE3
DISTI # V72:2272_22759364		Vishay IntertechnologiesE Series Power MOSFET TO247AC, 120 m @ 10V500
  • 500:$2.9200
  • 250:$3.3520
  • 100:$3.4540
  • 25:$3.8530
  • 10:$4.2810
  • 1:$5.9378
SIHG120N60E-GE3
DISTI # SIHG120N60E-GE3-ND		Vishay SiliconixMOSFET E SERIES 600V TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		525In Stock
  • 2500:$2.7316
  • 500:$3.4093
  • 100:$4.0049
  • 25:$4.6212
  • 10:$4.8880
  • 1:$5.4400
SIHG120N60E-GE3
DISTI # 33921568		Vishay IntertechnologiesE Series Power MOSFET TO247AC, 120 m @ 10V500
  • 500:$2.9200
  • 250:$3.3520
  • 100:$3.4540
  • 25:$3.8530
  • 10:$4.2810
  • 3:$5.9378
SIHG120N60E-GE3
DISTI # SIHG120N60E-GE3		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHG120N60E-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$2.4900
  • 5000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
  • 500:$2.7900
SIHG120N60E-GE3
DISTI # 99AC9559		Vishay IntertechnologiesMOSFET, N-CH, 25A, 600V, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.104ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes50
  • 500:$3.2700
  • 100:$3.7700
  • 50:$4.0400
  • 25:$4.3100
  • 10:$4.5800
  • 1:$5.5200
SIHG120N60E-GE3
DISTI # 78-SIHG120N60E-GE3		Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs TO-247AC
RoHS: Compliant		491
  • 1:$5.4700
  • 10:$4.5300
  • 100:$3.7300
  • 250:$3.6100
  • 500:$3.2400
SIHG120N60E-GE3
DISTI # 3019090		Vishay IntertechnologiesMOSFET, N-CH, 25A, 600V, TO-247AC
RoHS: Compliant		50
  • 1000:$3.7600
  • 500:$4.1900
  • 250:$4.5800
  • 100:$4.8200
  • 10:$5.5600
  • 1:$7.1200
SIHG120N60E-GE3
DISTI # 3019090		Vishay IntertechnologiesMOSFET, N-CH, 25A, 600V, TO-247AC50
  • 500:£2.3500
  • 250:£2.6100
  • 100:£2.7100
  • 10:£3.2900
  • 1:£4.4000
छवि भाग # विवरण
STF42N60M2-EP

Mfr.#: STF42N60M2-EP

OMO.#: OMO-STF42N60M2-EP

 MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-220FP package
V480LA80BP

Mfr.#: V480LA80BP

OMO.#: OMO-V480LA80BP-LITTELFUSE

 Varistors 480V 550pF
VDRS10P320BSE

Mfr.#: VDRS10P320BSE

OMO.#: OMO-VDRS10P320BSE-VISHAY

 Varistors 320volts 5mm Radial
STF42N60M2-EP

Mfr.#: STF42N60M2-EP

OMO.#: OMO-STF42N60M2-EP-STMICROELECTRONICS

 MOSFET N-CH 600V 34A EP TO220FP
उपलब्धता
स्टक:
491
अर्डर मा:
2474
मात्रा प्रविष्ट गर्नुहोस्:
SIHG120N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.४७
US$ ५.४७
10
US$ ४.५३
US$ ४५.३०
100
US$ ३.७३
US$ ३७३.००
250
US$ ३.६१
US$ ९०२.५०
500
US$ ३.२४
US$ १ ६२०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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