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IDW10G65C5XKSA1

IDW10G65C5XKSA1
Mfr. #:
IDW10G65C5XKSA1
निर्माता:
Infineon Technologies
विवरण:
Schottky Diodes & Rectifiers SIC DIODES
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IDW10G65C5XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IDW10G65C5XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
Schottky डायोड्स र Rectifiers
RoHS:
Y
उत्पादन:
Schottky सिलिकन कार्बाइड डायोड
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-247-3
यदि - फर्वार्ड वर्तमान:
10 A
Vrrm - दोहोरिने उल्टो भोल्टेज:
650 V
Vf - फर्वार्ड भोल्टेज:
1.5 V
Ifsm - फर्वार्ड सर्ज वर्तमान:
58 A
कन्फिगरेसन:
एकल
प्रविधि:
SiC
Ir - उल्टो वर्तमान:
0.5 uA
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
CoolSiC
प्याकेजिङ:
ट्यूब
ब्रान्ड:
Infineon टेक्नोलोजीहरू
Pd - शक्ति अपव्यय:
65 W
उत्पादन प्रकार:
Schottky डायोड्स र Rectifiers
कारखाना प्याक मात्रा:
240
उपश्रेणी:
डायोड र रेक्टिफायरहरू
व्यापार नाम:
CoolSiC
Vr - उल्टो भोल्टेज:
650 V
भाग # उपनाम:
IDW10G65C5 SP001633164
एकाइ वजन:
0.211644 oz
Tags
IDW10G6, IDW10G, IDW10, IDW1, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Diode Silicon Carbide Schottky 65 V 1A (DC) Through Hole PG-TO247-3-41
***ow.cn
Diode Schottky SiC 650V 10A 3-Pin(3+Tab) TO-247 Tube
***i-Key
DIODE SIL CARB 650V 10A TO247-3
*** Electronic Components
Schottky Diodes & Rectifiers SIC DIODES
***ineon SCT
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes, PG-TO247-3, RoHS
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
भाग # Mfg। विवरण स्टक मूल्य
IDW10G65C5XKSA1
DISTI # V36:1790_17076625		Infineon Technologies AG650V SiC Schottky Diode0
  • 240000:$2.2940
  • 120000:$2.2990
  • 24000:$3.0800
  • 2400:$4.7200
  • 240:$5.0100
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 10A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		480In Stock
  • 2640:$2.5172
  • 720:$3.1417
  • 240:$3.6906
  • 25:$4.2584
  • 10:$4.5040
  • 1:$5.0200
IDW10G65C5XKSA1
DISTI # SP001633164		Infineon Technologies AGSIC DIODES (Alt: SP001633164)
RoHS: Compliant
Min Qty: 1		Europe - 1127
  • 1000:€2.0900
  • 500:€2.1900
  • 100:€2.2900
  • 50:€2.3900
  • 25:€2.4900
  • 10:€2.5900
  • 1:€2.7900
IDW10G65C5XKSA1
DISTI # IDW10G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW10G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.3900
  • 2400:$2.3900
  • 960:$2.4900
  • 480:$2.5900
  • 240:$2.6900
IDW10G65C5XKSA1
DISTI # 726-IDW10G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		445
  • 1:$5.0100
  • 10:$4.2500
  • 100:$3.6900
  • 250:$3.5000
  • 500:$3.1400
IDW10G65C5XKSA1
DISTI # XSKDRABV0030553		Infineon Technologies AG 
RoHS: Compliant		467 in Stock0 on Order
  • 467:$3.3200
  • 240:$3.5500
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OMO.#: OMO-MCZ1210DH120L2TA0G

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Mfr.#: MCZ1210DH120L2TA0G

OMO.#: OMO-MCZ1210DH120L2TA0G-TDK

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Mfr.#: LMZM23601V5SILT

OMO.#: OMO-LMZM23601V5SILT-TEXAS-INSTRUMENTS

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TPD1E04U04DPYR

Mfr.#: TPD1E04U04DPYR

OMO.#: OMO-TPD1E04U04DPYR-TEXAS-INSTRUMENTS

 TVS DIODE 3.6V 8.9V 2X1SON
उपलब्धता
स्टक:
445
अर्डर मा:
2428
मात्रा प्रविष्ट गर्नुहोस्:
IDW10G65C5XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.०१
US$ ५.०१
10
US$ ४.२५
US$ ४२.५०
100
US$ ३.६९
US$ ३६९.००
250
US$ ३.५०
US$ ८७५.००
500
US$ ३.१४
US$ १ ५७०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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