BSZ120P03NS3EGATMA1

BSZ120P03NS3EGATMA1
Mfr. #:
BSZ120P03NS3EGATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
BSZ120P03NS3EGATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BSZ120P03NS3EGATMA1 DatasheetBSZ120P03NS3EGATMA1 Datasheet (P4-P6)BSZ120P03NS3EGATMA1 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TSDSON-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
P- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
30 V
आईडी - निरन्तर ड्रेन वर्तमान:
40 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
3.1 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
45 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
52 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
रील
उचाइ:
1.1 mm
लम्बाइ:
3.3 mm
शृङ्खला:
BSZ120P03
ट्रान्जिस्टर प्रकार:
1 P-Channel
चौडाइ:
3.3 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
22 S
पतन समय:
5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
11 ns
कारखाना प्याक मात्रा:
5000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
23 ns
सामान्य टर्न-अन ढिलाइ समय:
13 ns
भाग # उपनाम:
BSZ120P03NS3E BSZ12P3NS3EGXT G SP000709730
Tags
BSZ120P03NS3E, BSZ120P03NS, BSZ120P, BSZ120, BSZ12, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
भाग # Mfg। विवरण स्टक मूल्य
BSZ120P03NS3EGATMA1
DISTI # V72:2272_06384848
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
905
  • 500:$0.3204
  • 250:$0.3351
  • 100:$0.3500
  • 25:$0.5125
  • 10:$0.6044
  • 1:$0.7252
BSZ120P03NS3EGATMA1
DISTI # V36:1790_06384848
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
0
  • 5000000:$0.2112
  • 2500000:$0.2114
  • 500000:$0.2216
  • 50000:$0.2374
  • 5000:$0.2399
BSZ120P03NS3EGATMA1
DISTI # BSZ120P03NS3EGATMA1TR-ND
Infineon Technologies AGMOSFET P-CH 30V 40A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Limited Supply - Call
  • 5000:$0.2570
BSZ120P03NS3EGATMA1
DISTI # 32825692
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
5000
  • 50000:$0.2345
  • 20000:$0.2355
  • 10000:$0.2365
  • 5000:$0.2375
BSZ120P03NS3EGATMA1
DISTI # 31955319
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP T/R
RoHS: Compliant
905
  • 500:$0.3204
  • 250:$0.3351
  • 100:$0.3500
  • 35:$0.5125
BSZ120P03NS3EGATMA1
DISTI # BSZ120P03NS3EGATMA1
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ120P03NS3EGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.1842
  • 30000:$0.1876
  • 20000:$0.1941
  • 10000:$0.2014
  • 5000:$0.2089
BSZ120P03NS3EGATMA1
DISTI # SP000709730
Infineon Technologies AGTrans MOSFET P-CH 30V 40A 8-Pin TSDSON EP (Alt: SP000709730)
RoHS: Compliant
Min Qty: 5000
Europe - 0
  • 50000:€0.1829
  • 30000:€0.1969
  • 20000:€0.2139
  • 10000:€0.2329
  • 5000:€0.2849
BSZ120P03NS3EGATMA1
DISTI # 49AC0114
Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power RoHS Compliant: Yes3240
  • 1000:$0.2940
  • 500:$0.3180
  • 250:$0.3420
  • 100:$0.3670
  • 50:$0.4340
  • 25:$0.5010
  • 10:$0.5680
  • 1:$0.6770
BSZ120P03NS3EGATMA1.
DISTI # 31AC8239
Infineon Technologies AGTransistor Polarity:P Channel,Continuous Drain Current Id:-40A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:52W,No. of Pins:8Pins0
  • 50000:$0.2370
  • 20000:$0.2380
  • 10000:$0.2390
  • 1:$0.2400
BSZ120P03NS3E G
DISTI # 726-BSZ120P03NS3EG
Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
RoHS: Compliant
5000
  • 1:$0.6700
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
  • 5000:$0.2450
BSZ120P03NS3EGATMA1
DISTI # 726-BSZ120P03NS3EGAT
Infineon Technologies AGMOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
RoHS: Compliant
5000
  • 1:$0.6700
  • 10:$0.5620
  • 100:$0.3630
  • 1000:$0.2910
  • 5000:$0.2450
BSZ120P03NS3EGATMA1
DISTI # 2839439
Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-8
RoHS: Compliant
3240
  • 100:$0.5950
  • 25:$0.7290
  • 5:$0.8370
BSZ120P03NS3EGATMA1
DISTI # 2839439
Infineon Technologies AGMOSFET, P-CH, -30V, -40A, TSDSON-83470
  • 100:£0.3500
  • 10:£0.6000
  • 1:£0.7390
छवि भाग # विवरण
BSZ120P03NS3GATMA1

Mfr.#: BSZ120P03NS3GATMA1

OMO.#: OMO-BSZ120P03NS3GATMA1

MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
BSZ120P03NS3 G

Mfr.#: BSZ120P03NS3 G

OMO.#: OMO-BSZ120P03NS3-G

MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
BSZ120P03NS3E G

Mfr.#: BSZ120P03NS3E G

OMO.#: OMO-BSZ120P03NS3E-G

MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
BSZ120P03N

Mfr.#: BSZ120P03N

OMO.#: OMO-BSZ120P03N-1190

नयाँ र मौलिक
BSZ120P03NS3

Mfr.#: BSZ120P03NS3

OMO.#: OMO-BSZ120P03NS3-1190

नयाँ र मौलिक
BSZ120P03NS3EG

Mfr.#: BSZ120P03NS3EG

OMO.#: OMO-BSZ120P03NS3EG-1190

-30V,-40A,P-channel power MOSFET
BSZ120P03NS3G

Mfr.#: BSZ120P03NS3G

OMO.#: OMO-BSZ120P03NS3G-1190

नयाँ र मौलिक
BSZ120P03NS3GATMA1 , TG1

Mfr.#: BSZ120P03NS3GATMA1 , TG1

OMO.#: OMO-BSZ120P03NS3GATMA1-TG1-1190

नयाँ र मौलिक
BSZ120P03NS3EGATMA1

Mfr.#: BSZ120P03NS3EGATMA1

OMO.#: OMO-BSZ120P03NS3EGATMA1-INFINEON-TECHNOLOGIES

MOSFET P-CH 30V 40A TSDSON-8
BSZ120P03NS3E G

Mfr.#: BSZ120P03NS3E G

OMO.#: OMO-BSZ120P03NS3E-G-317

RF Bipolar Transistors MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3
उपलब्धता
स्टक:
Available
अर्डर मा:
1987
मात्रा प्रविष्ट गर्नुहोस्:
BSZ120P03NS3EGATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ०.६७
US$ ०.६७
10
US$ ०.५६
US$ ५.६२
100
US$ ०.३६
US$ ३६.३०
1000
US$ ०.२९
US$ २९१.००
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