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STP18N60DM2

STP18N60DM2
Mfr. #:
STP18N60DM2
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STP18N60DM2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STP18N60DM2 DatasheetSTP18N60DM2 Datasheet (P4-P6)STP18N60DM2 Datasheet (P7-P9)STP18N60DM2 Datasheet (P10-P12)STP18N60DM2 Datasheet (P13)
ECAD Model:
थप जानकारी:
STP18N60DM2 थप जानकारी STP18N60DM2 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
600 V
आईडी - निरन्तर ड्रेन वर्तमान:
12 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
260 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
20 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
90 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
शृङ्खला:
STP18N60DM2
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
-
पतन समय:
32.5 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
8 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
9.5 ns
सामान्य टर्न-अन ढिलाइ समय:
13.5 ns
एकाइ वजन:
0.011640 oz
Tags
STP18N60, STP18N6, STP18N, STP18, STP1, STP
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 STMicroelectronics STP18N60DM2
***ical
Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube
***ment14 APAC
MOSFET, N-CH, 600V, 12A, TO-220
***i-Key
MOSFET N-CH 600V 12A
***et Europe
N-channel MDmesh >350 V to 700 V
***ark
Ptd High Voltage
***nell
MOSFET, CAN-N, 600V, 12A, TO-220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.26ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:90W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
MDmesh DM2 Power MOSFETs
STMicroelectronics MDmesh DM2 series are ST's latest fast recovery diode series of 600V power MOSFETs optimized for ZVS phase-shift bridge topologies. They feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STP18N60DM2
DISTI # V36:1790_13795921		STMicroelectronicsTrans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube0
    STP18N60DM2
    DISTI # 497-16338-5-ND    		STMicroelectronicsMOSFET N-CH 600V 12A
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		40In Stock
    • 5000:$1.1564
    • 2500:$1.1709
    • 500:$1.5178
    • 100:$1.8473
    • 50:$2.1682
    • 10:$2.2980
    • 1:$2.5600
    STP18N60DM2
    DISTI # STP18N60DM2    		STMicroelectronicsN-channel MDmesh >350 V to 700 V - Rail/Tube (Alt: STP18N60DM2)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Tube    		Americas - 0
    • 10000:$1.0539
    • 6000:$1.0759
    • 4000:$1.1259
    • 2000:$1.1799
    • 1000:$1.2379
    STP18N60DM2
    DISTI # 74Y7917    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 1:$1.0400
    STP18N60DM2
    DISTI # 511-STP18N60DM2    		STMicroelectronicsMOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package
    RoHS: Compliant    		997
    • 1:$2.4300
    • 10:$2.0600
    • 100:$1.6500
    • 500:$1.4400
    • 1000:$1.1900
    • 2000:$1.1100
    • 5000:$1.0700
    STP18N60DM2STMicroelectronicsPower Field-Effect Transistor
    RoHS: Compliant    		1000
      STP18N60DM2
      DISTI # 2531109      		STMicroelectronicsMOSFET, N-CH, 600V, 12A, TO-220
      RoHS: Compliant      		99
      • 5000:$1.8100
      • 2500:$1.8800
      • 1000:$2.0200
      • 500:$2.4300
      • 100:$3.1300
      • 50:$3.4700
      • 1:$4.3100
      STP18N60DM2
      DISTI # 2531109      		STMicroelectronicsMOSFET, N-CH, 600V, 12A, TO-22099
      • 500:£1.1200
      • 250:£1.2000
      • 100:£1.2900
      • 10:£1.6000
      • 1:£2.1300
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      उपलब्धता
      स्टक:
      967
      अर्डर मा:
      2950
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