FDN358P

Mfr. #:: FDN358P
निर्माता:: ON Semiconductor / Fairchild
विवरण:: MOSFET SSOT-3 P-CH -30V
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: FDN358P डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

उत्पादन विशेषता
विशेषता मान

निर्माता:: ON अर्धचालक

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: SSOT-3

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 1.5 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 125 mOhms

Vgs - गेट-स्रोत भोल्टेज:: 20 V

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 500 mW (1/2 W)

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: PowerTrench

प्याकेजिङ:: रील

उचाइ:: 1.12 mm

लम्बाइ:: 2.9 mm

उत्पादन:: MOSFET सानो संकेत

शृङ्खला:: FDN358P

ट्रान्जिस्टर प्रकार:: 1 P-Channel

प्रकार:: MOSFET

चौडाइ:: 1.4 mm

ब्रान्ड:: सेमीकन्डक्टर / फेयरचाइल्डमा

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 3.5 S

पतन समय:: 13 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 13 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 12 ns

सामान्य टर्न-अन ढिलाइ समय:: 5 ns

भाग # उपनाम:: FDN358P_NL

एकाइ वजन:: 0.001058 oz

Tags: FDN358P, FDN358, FDN35, FDN3, FDN

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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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FDN358P विवरण

***Components: In a Pack of 5, P-Channel MOSFET, 1.5 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN358P

***Semiconductor: P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.5A, 125mΩ

***ure Electronics: Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3

***p One Stop Global: Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R

***p One Stop Japan: Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R

***trelec: MOSFET Operating temperature: -55...150 °C Marking: 358 Drive: logic level Housing type: SOT-23 Polarity: P Power dissipation: 500 mW

***ark: MOSFET, P, SOT-23, FULL REEL

***akorn: MOSFET P-Channel 30V 1.5A SuperSOT3

***ical: Trans MOSFET P-CH 30V 1.5A T/R

*** Source Electronics: MOSFET P-CH 30V 1.5A SSOT3

***eco: Fairchild Semi Fdn358P

***rchild Semiconductor: This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior sw itching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

***ment14 APAC: Prices include import duty and tax. MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.9V; Power Dissipation Pd:560mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.5A; Current Temperature:25°C; Device Marking:FDN358P; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:5A; SMD Marking:358; Tape Width:8mm; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.9V; Voltage Vgs Rds on Measurement:-10V

***nell: MOSFET, P, SOT-23; Polarità Transistor:Canale P; Corrente Continua di Drain Id:1.6A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.2ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-1.9V; Dissipazione di Potenza Pd:560mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:1.5A; Corrente di Impulso Idm:5A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Larghezza Esterna:3.05mm; Larghezza Nastro:8mm; Livello Temperatura a Piena Potenza:25°C; Lunghezza/Altezza Esterna:1.12mm; Marcatura Dispositivo:FDN358P; Marcatura SMD:358; No. di Transistor:1; Profondità Esterna:2.5mm; Temperatura di Corrente:25°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:-30V; Tensione Vgs Max:-1.9V

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
FDN358P DISTI # C1S541901591647	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R RoHS: Compliant	3013	3000:$0.1210
FDN358P DISTI # FDN358PCT-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PDKR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	23795In Stock	1000:$0.1513 500:$0.2018 100:$0.2943 10:$0.4290 1:$0.5500
FDN358P DISTI # FDN358PTR-ND	ON Semiconductor	MOSFET P-CH 30V 1.5A SSOT3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.1347
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R (Alt: FDN358P) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Cut TR (SOS) (Alt: FDN358P) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 0
FDN358P DISTI # FDN358P	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN358P) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.0879 12000:$0.0869 18000:$0.0859 30000:$0.0849 60000:$0.0829
FDN358P_G DISTI # FDN358P-G	ON Semiconductor	Trans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R (Alt: FDN358P-G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
FDN358P DISTI # 87X5243	ON Semiconductor	MOSFET Transistor, P Channel, 1.6 A, 30 V, 200 mohm, -10 V, -1.9 V , RoHS Compliant: Yes	6000	1:$0.1160 3000:$0.1130 6000:$0.1110 12000:$0.1080 18000:$0.1040 30000:$0.0990
FDN358P DISTI # 58K8843	ON Semiconductor	P CHANNEL MOSFET, -30V, 1.5A SUPER SOT-3,Transistor Polarity:P Channel,Continuous Drain Current Id:1.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):200mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.9V , RoHS Compliant: Yes	0	1:$0.4400 25:$0.3290 50:$0.2540 100:$0.1790 250:$0.1640 500:$0.1490 1000:$0.1340
FDN358P	ON Semiconductor	Single P-Channel 30V 125 mOhm Logic Level PowerTrench Mosfet SSOT-3 RoHS: Compliant	48000Reel	3000:$0.0995 6000:$0.0939 9000:$0.0926
FDN358P	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	70156	1000:$0.1600 500:$0.1700 100:$0.1800 25:$0.1900 1:$0.2000
FDN358P DISTI # 512-FDN358P	ON Semiconductor	MOSFET SSOT-3 P-CH -30V RoHS: Compliant	2993	1:$0.4400 10:$0.3290 100:$0.1790 1000:$0.1340 3000:$0.1160 9000:$0.1080 24000:$0.0990 45000:$0.0950
FDN358P	Fairchild Semiconductor Corporation		2123
FDN358P DISTI # 6710450P	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, RL	6960	25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P DISTI # 6710450	ON Semiconductor	MOSFET P-CHANNEL 30V 1.5A SUPERSOT3, PK	805	5:£0.4140 25:£0.2140 100:£0.1160 250:£0.1120 500:£0.1080
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	5	1:$0.3000
FDN358P	Fairchild Semiconductor Corporation	1500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	7:$0.6212 1:$0.7765
FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 1885
FDN358P	Fairchild Semiconductor Corporation	INSTOCK	1843
FDN358P DISTI # FDN358P	Fairchild Semiconductor Corporation	RoHS: Compliant	76
FDN358P DISTI # XSFP00000073985	Fairchild Semiconductor Corporation	RoHS: Compliant	258432	3000:$0.1333 258432:$0.1250
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	8455	5:£0.2830 50:£0.2550 100:£0.1370 500:£0.1010 1500:£0.0945
FDN358P DISTI # 2438447	ON Semiconductor	MOSFET, P, SOT-23, FULL REEL RoHS: Compliant	6000	3000:$0.2140
FDN358P DISTI # 9846328RL	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510
FDN358P DISTI # 9846328	ON Semiconductor	MOSFET, P, SOT-23 RoHS: Compliant	0	1:$0.6970 10:$0.5210 100:$0.2840 1000:$0.2130 3000:$0.1840 9000:$0.1720 24000:$0.1570 45000:$0.1510

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: BQ296103DSGR OMO.#: OMO-BQ296103DSGR	Battery Management 2S-4S 2LP with LDO enable/disable
	Mfr.#: 24AA02UIDT-I/OT OMO.#: OMO-24AA02UIDT-I-OT	EEPROM 2K I2C EE Unique ID
	Mfr.#: MM3Z5V6C OMO.#: OMO-MM3Z5V6C	Zener Diodes Diode Zener 5.6V 200mW 5%
	Mfr.#: BSS138 OMO.#: OMO-BSS138	MOSFET SOT-23 N-CH LOGIC
	Mfr.#: CSD17308Q3 OMO.#: OMO-CSD17308Q3	MOSFET 30V NCh NexFET Pwr MOSFET
	Mfr.#: SI7114DN-T1-E3 OMO.#: OMO-SI7114DN-T1-E3	MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
	Mfr.#: BQ40Z50RSMR-R2 OMO.#: OMO-BQ40Z50RSMR-R2	Battery Management BQ40Z50RSMR-R2
	Mfr.#: BQ40Z60RHBT OMO.#: OMO-BQ40Z60RHBT	Battery Management BQ40Z60 complete multi-cell batt mngr
	Mfr.#: BAT54HT1G OMO.#: OMO-BAT54HT1G	Schottky Diodes & Rectifiers 30V 200mW Single
	Mfr.#: SI7114DN-T1-E3 OMO.#: OMO-SI7114DN-T1-E3-VISHAY	MOSFET N-CH 30V 11.7A 1212-8

उपलब्धता

स्टक:: 19
अर्डर मा:: 2002
मात्रा प्रविष्ट गर्नुहोस्:

FDN358P को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.४४~~; ~~US$ ०.४४~~

10: ~~US$ ०.३३~~; ~~US$ ३.२९~~

100: ~~US$ ०.१८~~; ~~US$ १७.९०~~

1000: ~~US$ ०.१३~~; ~~US$ १३४.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

बाट सुरु गर्नुहोस्

FDN358P 6
FDN358 9
FDN35 48
FDN3 253
FDN 332

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FDN358P

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes