SISS65DN-T1-GE3

Mfr. #:: SISS65DN-T1-GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET -30V Vds -/+20V Vgs PowerPAK 1212-8S
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SISS65DN-T1-GE3 डाटा पाना
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HTML Datasheet:: SISS65DN-T1-GE3 Datasheet SISS65DN-T1-GE3 Datasheet (P4-P6)SISS65DN-T1-GE3 Datasheet (P7)
ECAD Model:
थप जानकारी:: SISS65DN-T1-GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK-1212-8S-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: P- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 30 V

आईडी - निरन्तर ड्रेन वर्तमान:: 94 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 4.6 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 2.3 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 138 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 150 C

Pd - शक्ति अपव्यय:: 65.8 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

व्यापार नाम:: TrenchFET, PowerPAK

प्याकेजिङ:: रील

शृङ्खला:: SIS

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 62 S

पतन समय:: 18 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 25 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 45 ns

सामान्य टर्न-अन ढिलाइ समय:: 20 ns

Tags: SISS6, SISS, SIS

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS65DN-T1-GE3 थप जानकारी

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

भाग #	Mfg।	विवरण	स्टक	मूल्य
SISS65DN-T1-GE3 DISTI # V99:2348_22526808	Vishay Intertechnologies	SISS65DN-T1-GE3	0
SISS65DN-T1-GE3 DISTI # V36:1790_22526808	Vishay Intertechnologies	SISS65DN-T1-GE3	0
SISS65DN-T1-GE3 DISTI # V72:2272_22526808	Vishay Intertechnologies	SISS65DN-T1-GE3	0
SISS65DN-T1-GE3 DISTI # SISS65DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CHAN 30V PPAK 1212-8S RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.3213 6000:$0.3253 3000:$0.3494
SISS65DN-T1-GE3 DISTI # SISS65DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CHAN 30V PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3971 500:$0.4964 100:$0.6280 10:$0.8190 1:$0.9300
SISS65DN-T1-GE3 DISTI # SISS65DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CHAN 30V PPAK 1212-8S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3971 500:$0.4964 100:$0.6280 10:$0.8190 1:$0.9300
SISS65DN-T1-GE3 DISTI # SISS65DN-T1-GE3	Vishay Intertechnologies	- Tape and Reel (Alt: SISS65DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.2939 30000:$0.3019 18000:$0.3099 12000:$0.3239 6000:$0.3339
SISS65DN-T1-GE3 DISTI # 99AC9593	Vishay Intertechnologies	MOSFET, P-CH, -30V, -94A, 150DEG C,Transistor Polarity:P Channel,Continuous Drain Current Id:-94A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.3V,Power RoHS Compliant: Yes	45	1000:$0.3720 500:$0.4640 250:$0.5130 100:$0.5620 50:$0.6210 25:$0.6810 10:$0.7400 1:$0.9190
SISS65DN-T1-GE3 DISTI # 81AC3505	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.2960 30000:$0.3100 20000:$0.3330 10000:$0.3560 5000:$0.3860 1:$0.3950
SISS65DN-T1-GE3 DISTI # 78-SISS65DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds -/+20V Vgs PowerPAK 1212-8S RoHS: Compliant	0	1:$0.9100 10:$0.7330 100:$0.5560 500:$0.4590 1000:$0.3680 3000:$0.3330
SISS65DN-T1-GE3 DISTI # 3019143	Vishay Intertechnologies	MOSFET, P-CH, -30V, -94A, 150DEG C RoHS: Compliant	45	5000:$0.4140 1000:$0.4230 500:$0.5370 250:$0.5990 100:$0.6620 25:$0.8910 5:$0.9740
SISS65DN-T1-GE3 DISTI # 3019143	Vishay Intertechnologies	MOSFET, P-CH, -30V, -94A, 150DEG C	45	500:£0.3360 250:£0.3720 100:£0.4070 25:£0.5420 5:£0.6030

सम्बन्धित उत्पादनहरु

छवि

भाग #

विवरण

Mfr.#: SISS65DN-T1-GE3

OMO.#: OMO-SISS65DN-T1-GE3

MOSFET -30V Vds -/+20V Vgs PowerPAK 1212-8S

Mfr.#: SISS65DN-T1-GE3

OMO.#: OMO-SISS65DN-T1-GE3-VISHAY

MOSFET P-CHAN 30V PPAK 1212-8S

उपलब्धता

स्टक:: Available
अर्डर मा:: 2500
मात्रा प्रविष्ट गर्नुहोस्:

SISS65DN-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।

सन्दर्भ मूल्य (USD)

मात्रा
एकाइ मूल्य
विस्तार मूल्य

1: ~~US$ ०.९१~~; ~~US$ ०.९१~~

10: ~~US$ ०.७३~~; ~~US$ ७.३३~~

100: ~~US$ ०.५६~~; ~~US$ ५५.६०~~

500: ~~US$ ०.४६~~; ~~US$ २२९.५०~~

1000: ~~US$ ०.३७~~; ~~US$ ३६८.००~~

2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।

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SISS65DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes