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IPB80N06S2L11ATMA2

IPB80N06S2L11ATMA2
Mfr. #:
IPB80N06S2L11ATMA2
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-CHANNEL_55/60V
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB80N06S2L11ATMA2 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S2L11ATMA2 DatasheetIPB80N06S2L11ATMA2 Datasheet (P4-P6)IPB80N06S2L11ATMA2 Datasheet (P7-P8)
ECAD Model:
थप जानकारी:
IPB80N06S2L11ATMA2 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
कन्फिगरेसन:
एकल
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
IPB80N06S2L-11 SP001061398
एकाइ वजन:
0.139332 oz
Tags
IPB80N06S2L, IPB80N06S2, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon IPB80N06S2L11ATMA1
***ical
Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263
***et Europe
Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 55V 80A TO263-3
***ronik
N-CH 55V 80A 11mOhm TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
भाग # Mfg। विवरण स्टक मूल्य
IPB80N06S2L11ATMA2
DISTI # IPB80N06S2L11ATMA2-ND		Infineon Technologies AGMOSFET N-CH 55V 80A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.9887
IPB80N06S2L11ATMA2
DISTI # IPB80N06S2L11ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L11ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB80N06S2L11ATMA2
DISTI # IPB80N06S2L11ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L11ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.8249
  • 6000:$0.8399
  • 4000:$0.8689
  • 2000:$0.9009
  • 1000:$0.9349
IPB80N06S2L11ATMA2
DISTI # IPB80N06S2L11ATMA2		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S2L11ATMA2)
Min Qty: 625
Container: Bulk		Americas - 0
  • 6250:$0.5079
  • 3125:$0.5169
  • 1875:$0.5349
  • 1250:$0.5549
  • 625:$0.5759
IPB80N06S2L11ATMA2
DISTI # SP001061398		Infineon Technologies AGTrans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R (Alt: SP001061398)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€0.7359
  • 6000:€0.7879
  • 4000:€0.8489
  • 2000:€0.9199
  • 1000:€1.1039
IPB80N06S2L11ATMA2
DISTI # 726-IPB80N06S2L11ATM		Infineon Technologies AGMOSFET N-CHANNEL_55/60V992
  • 1:$1.4100
  • 10:$1.2100
  • 100:$0.9230
  • 500:$0.8160
  • 1000:$0.6440
  • 2000:$0.5710
  • 10000:$0.5500
IPB80N06S2L11ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		59000
  • 1000:$0.5300
  • 500:$0.5500
  • 100:$0.5800
  • 25:$0.6000
  • 1:$0.6500
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OMO.#: OMO-IPB80N06S2L07ATMA3

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Mfr.#: IPB80N06S2L07ATMA3

OMO.#: OMO-IPB80N06S2L07ATMA3-INFINEON-TECHNOLOGIES

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उपलब्धता
स्टक:
857
अर्डर मा:
2840
मात्रा प्रविष्ट गर्नुहोस्:
IPB80N06S2L11ATMA2 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.४१
US$ १.४१
10
US$ १.२१
US$ १२.१०
100
US$ ०.९२
US$ ९२.३०
500
US$ ०.८२
US$ ४०८.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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