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IKW30N65EL5XKSA1

IKW30N65EL5XKSA1
Mfr. #:
IKW30N65EL5XKSA1
निर्माता:
Infineon Technologies
विवरण:
IGBT Transistors 650V IGBT Trenchstop 5
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IKW30N65EL5XKSA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
IKW30N65EL5XKSA1 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
IGBT ट्रान्जिस्टरहरू
RoHS:
Y
प्रविधि:
सि
प्याकेज / केस:
TO-247-3
माउन्टिङ शैली:
प्वाल मार्फत
कन्फिगरेसन:
एकल
कलेक्टर- एमिटर भोल्टेज VCEO अधिकतम:
650 V
कलेक्टर-एमिटर संतृप्ति भोल्टेज:
1.05 V
अधिकतम गेट एमिटर भोल्टेज:
20 V
25 C मा निरन्तर कलेक्टर वर्तमान:
85 A
Pd - शक्ति अपव्यय:
227 W
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 175 C
शृङ्खला:
TRENCHSTOP 5 L5
प्याकेजिङ:
ट्यूब
ब्रान्ड:
Infineon टेक्नोलोजीहरू
गेट-एमिटर चुहावट वर्तमान:
100 nA
उत्पादन प्रकार:
IGBT ट्रान्जिस्टरहरू
कारखाना प्याक मात्रा:
240
उपश्रेणी:
IGBTs
व्यापार नाम:
TRENCHSTOP
भाग # उपनाम:
IKW30N65EL5 SP001178080
एकाइ वजन:
1.340411 oz
Tags
IKW30N65E, IKW30N65, IKW30N6, IKW30N, IKW3, IKW
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 85A 227000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 85A, To-247; Dc Collector Current:85A; Collector Emitter Saturation Voltage Vce(On):1.05V; Power Dissipation Pd:227W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
भाग # Mfg। विवरण स्टक मूल्य
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1IN-ND		Infineon Technologies AGIGBT 650V 30A FAST DIODE TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		321In Stock
  • 1200:$3.0529
  • 720:$3.6199
  • 240:$4.2523
  • 10:$5.1900
  • 1:$5.7800
IKW30N65EL5XKSA1
DISTI # IKW30N65EL5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKW30N65EL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.8900
  • 480:$2.7900
  • 960:$2.6900
  • 1440:$2.5900
  • 2400:$2.5900
IKW30N65EL5XKSA1
DISTI # SP001178080		Infineon Technologies AGTrans IGBT Chip N-CH 650V 85A 3-Pin TO-247 Tube (Alt: SP001178080)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€2.5900
  • 10:€2.4900
  • 25:€2.4900
  • 50:€2.2900
  • 100:€2.2900
  • 500:€2.2900
  • 1000:€2.1900
IKW30N65EL5XKSA1
DISTI # 12AC9674		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247,DC Collector Current:85A,Collector Emitter Saturation Voltage Vce(on):1.05V,Power Dissipation Pd:227W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes622
  • 100:$4.8700
  • 50:$5.1000
  • 25:$5.3200
  • 10:$5.5500
  • 1:$6.4400
IKW30N65EL5XKSA1
DISTI # 726-IKW30N65EL5XKSA1		Infineon Technologies AGIGBT Transistors 650V IGBT Trenchstop 5
RoHS: Compliant		227
  • 1:$5.4900
  • 10:$4.6700
  • 100:$4.0500
  • 250:$3.8400
  • 500:$3.4400
IKW30N65EL5XKSA1
DISTI # 2709886		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		622
  • 1200:$4.8400
  • 720:$5.7300
  • 240:$6.7300
  • 10:$8.2200
  • 1:$9.1500
IKW30N65EL5XKSA1
DISTI # 2709886		Infineon Technologies AGIGBT, SINGLE, 650V, 85A, TO-247
RoHS: Compliant		622
  • 500:£2.6800
  • 250:£3.0000
  • 100:£3.1500
  • 10:£3.6400
  • 1:£4.7300
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उपलब्धता
स्टक:
181
अर्डर मा:
2164
मात्रा प्रविष्ट गर्नुहोस्:
IKW30N65EL5XKSA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ५.४९
US$ ५.४९
10
US$ ४.६७
US$ ४६.७०
100
US$ ४.०५
US$ ४०५.००
250
US$ ३.८४
US$ ९६०.००
500
US$ ३.४४
US$ १ ७२०.००
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