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SQJ412EP-T2_GE3

SQJ412EP-T2_GE3
Mfr. #:
SQJ412EP-T2_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQJ412EP-T2_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SQJ412EP-T2_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
PowerPAK SO-8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V
आईडी - निरन्तर ड्रेन वर्तमान:
32 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.1 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
120 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
83 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SQ
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
85 S
पतन समय:
55 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
150 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
50 ns
सामान्य टर्न-अन ढिलाइ समय:
45 ns
Tags
SQJ412, SQJ41, SQJ4, SQJ
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
छवि भाग # विवरण
SQJ412EP-T1_GE3

Mfr.#: SQJ412EP-T1_GE3

OMO.#: OMO-SQJ412EP-T1-GE3-C09

 MOSFET 40V 32A 83W AEC-Q101 Qualified
SQJ412EP-T2_GE3

Mfr.#: SQJ412EP-T2_GE3

OMO.#: OMO-SQJ412EP-T2-GE3

 MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
SQJ412EP-T1-GE3

Mfr.#: SQJ412EP-T1-GE3

OMO.#: OMO-SQJ412EP-T1-GE3-5EF

 MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3
SQJ412EP-T1-GE3

Mfr.#: SQJ412EP-T1-GE3

OMO.#: OMO-SQJ412EP-T1-GE3-126

 IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive
SQJ412EP-T1_GE3

Mfr.#: SQJ412EP-T1_GE3

OMO.#: OMO-SQJ412EP-T1-GE3-VISHAY

 MOSFET N-CH 40V 32A PPAK SO-8
उपलब्धता
स्टक:
Available
अर्डर मा:
3500
मात्रा प्रविष्ट गर्नुहोस्:
SQJ412EP-T2_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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