SQJ412EP-T2_GE3

Mfr. #:: SQJ412EP-T2_GE3
निर्माता:: Vishay / Siliconix
विवरण:: MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
जीवन चक्र:: यस निर्माताबाट नयाँ।
डाटा पाना:: SQJ412EP-T2_GE3 डाटा पाना
डेलिभरी:: DHL FedEx Ups TNT EMS
भुक्तानी:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:: SQJ412EP-T2_GE3 थप जानकारी

उत्पादन विशेषता
विशेषता मान

निर्माता:: विसय

उत्पादन कोटि:: MOSFET

RoHS:: Y

प्रविधि:: सि

माउन्टिङ शैली:: SMD/SMT

प्याकेज / केस:: PowerPAK SO-8

च्यानलहरूको संख्या:: 1 Channel

ट्रान्जिस्टर ध्रुवता:: N- च्यानल

Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:: 40 V

आईडी - निरन्तर ड्रेन वर्तमान:: 32 A

Rds अन - ड्रेन-स्रोत प्रतिरोध:: 4.1 mOhms

Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:: 1.5 V

Vgs - गेट-स्रोत भोल्टेज:: 20 V

Qg - गेट चार्ज:: 120 nC

न्यूनतम परिचालन तापमान:: - 55 C

अधिकतम परिचालन तापमान:: + 175 C

Pd - शक्ति अपव्यय:: 83 W

कन्फिगरेसन:: एकल

च्यानल मोड:: वृद्धि

योग्यता:: AEC-Q101

व्यापार नाम:: TrenchFET

प्याकेजिङ:: रील

शृङ्खला:: SQ

ट्रान्जिस्टर प्रकार:: 1 N-Channel

ब्रान्ड:: Vishay / Siliconix

फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:: 85 S

पतन समय:: 55 ns

उत्पादन प्रकार:: MOSFET

उठ्ने समय:: 150 ns

कारखाना प्याक मात्रा:: 3000

उपश्रेणी:: MOSFETs

सामान्य टर्न-अफ ढिलाइ समय:: 50 ns

सामान्य टर्न-अन ढिलाइ समय:: 45 ns

Tags: SQJ412, SQJ41, SQJ4, SQJ

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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SQJ412EP-T2_GE3 थप जानकारी

SQ Automotive Power MOSFETs: Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.

सम्बन्धित उत्पादनहरु

छवि	भाग #	विवरण
	Mfr.#: SQJ412EP-T1_GE3 OMO.#: OMO-SQJ412EP-T1-GE3-C09	MOSFET 40V 32A 83W AEC-Q101 Qualified
	Mfr.#: SQJ412EP-T2_GE3 OMO.#: OMO-SQJ412EP-T2-GE3	MOSFET RECOMMENDED ALT 781-SQJ422EP-T1_GE3
	Mfr.#: SQJ412EP-T1-GE3 OMO.#: OMO-SQJ412EP-T1-GE3-5EF	MOSFET RECOMMENDED ALT 78-SQJ412EP-T1_GE3
	Mfr.#: SQJ412EP-T1-GE3 OMO.#: OMO-SQJ412EP-T1-GE3-126	IGBT Transistors MOSFET 40V 32A 83W N-Ch Automotive
	Mfr.#: SQJ412EP-T1_GE3 OMO.#: OMO-SQJ412EP-T1-GE3-VISHAY	MOSFET N-CH 40V 32A PPAK SO-8

उपलब्धता

स्टक:: Available
अर्डर मा:: 3500
मात्रा प्रविष्ट गर्नुहोस्:

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बाट सुरु गर्नुहोस्

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SQJ412EP-T2_GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes