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SIHB23N60E-GE3

SIHB23N60E-GE3
Mfr. #:
SIHB23N60E-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SIHB23N60E-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB23N60E-GE3 DatasheetSIHB23N60E-GE3 Datasheet (P4-P6)SIHB23N60E-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SIHB23N60E-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
650 V
आईडी - निरन्तर ड्रेन वर्तमान:
23 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
158 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
63 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
227 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
थोक
उचाइ:
4.83 mm
लम्बाइ:
10.67 mm
शृङ्खला:
E
चौडाइ:
9.65 mm
ब्रान्ड:
Vishay / Siliconix
पतन समय:
34 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
38 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
66 ns
सामान्य टर्न-अन ढिलाइ समय:
22 ns
एकाइ वजन:
0.050717 oz
Tags
SIHB2, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N Channel 600 V 0.158 O 95 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 23A 3-Pin(2+Tab) D2PAK
***et Europe
Trans MOSFET N-CH 600V 23A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 23A D2PAK
***ark
MOSFET, N CH, 600V, 23A, TO-263-3
***
N-CH 600V D2PAK
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 600V, 23A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.132ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:-; Power Dissipation Pd:227W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
***nell
MOSFET, CANALE N, 600V, 23A, TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.132ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:-; Dissipazione di Potenza Pd:227W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Temperatura di Esercizio Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
भाग # Mfg। विवरण स्टक मूल्य
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 23A D2PAK
Min Qty: 1
Container: Tube		999In Stock
  • 2500:$1.8766
  • 500:$2.3423
  • 100:$2.7515
  • 50:$3.1748
  • 10:$3.3580
  • 1:$3.7400
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin D2PAK - Tape and Reel (Alt: SIHB23N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.7900
  • 10000:$1.7900
  • 2000:$1.8900
  • 4000:$1.8900
  • 1000:$1.9900
SIHB23N60E-GE3
DISTI # SIHB23N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 23A 3-Pin D2PAK (Alt: SIHB23N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.3900
  • 300:€1.4900
  • 200:€1.6900
  • 100:€2.0900
  • 50:€2.5900
SIHB23N60E-GE3
DISTI # 40X8671		Vishay IntertechnologiesMOSFET Transistor, N Channel, 23 A, 600 V, 0.132 ohm, 10 V RoHS Compliant: Yes
RoHS: Compliant		151
  • 1000:$2.3600
  • 500:$2.7900
  • 100:$3.4200
  • 50:$3.6600
  • 25:$3.9000
  • 10:$4.1400
  • 1:$4.6300
SIHB23N60E-GE3
DISTI # 78-SIHB23N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		1000
  • 1:$3.9500
  • 10:$3.2700
  • 100:$2.6900
  • 250:$2.6100
  • 500:$2.3400
  • 1000:$1.9700
  • 2000:$1.8700
SIHB23N60E-GE3
DISTI # 2400377		Vishay IntertechnologiesMOSFET, N CH, 600V, 23A, TO-263-3
RoHS: Compliant		151
  • 2500:$2.9800
  • 500:$3.7100
  • 100:$4.3600
  • 50:$5.0300
  • 10:$5.3200
  • 1:$5.9200
SIHB23N60E-GE3
DISTI # 2400377		Vishay IntertechnologiesMOSFET, N CH, 600V, 23A, TO-263-3181
  • 500:£2.1500
  • 250:£2.3200
  • 100:£2.6400
  • 10:£3.1900
  • 1:£3.9800
SIHB23N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
    छवि भाग # विवरण
    SIHB23N60E-GE3

    Mfr.#: SIHB23N60E-GE3

    OMO.#: OMO-SIHB23N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB23N60E-GE3

    Mfr.#: SIHB23N60E-GE3

    OMO.#: OMO-SIHB23N60E-GE3-VISHAY

    		 MOSFET N-CH 600V 23A D2PAK
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1984
    मात्रा प्रविष्ट गर्नुहोस्:
    SIHB23N60E-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ ३.९५
    US$ ३.९५
    10
    US$ ३.२७
    US$ ३२.७०
    100
    US$ २.६९
    US$ २६९.००
    250
    US$ २.६१
    US$ ६५२.५०
    500
    US$ २.३४
    US$ १ १७०.००
    1000
    US$ १.९७
    US$ १ ९७०.००
    2000
    US$ १.८७
    US$ ३ ७४०.००
    5000
    US$ १.८०
    US$ ९ ०००.००
    2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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