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IRF7779L2TR1PBF

IRF7779L2TR1PBF
Mfr. #:
IRF7779L2TR1PBF
निर्माता:
Infineon / IR
विवरण:
MOSFET 150V 67A 11mOhm 97nC Qg
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRF7779L2TR1PBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7779L2TR1PBF DatasheetIRF7779L2TR1PBF Datasheet (P4-P6)IRF7779L2TR1PBF Datasheet (P7-P9)IRF7779L2TR1PBF Datasheet (P10-P11)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
DirectFET-L8
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
150 V
आईडी - निरन्तर ड्रेन वर्तमान:
67 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
97 nC
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
125 W
कन्फिगरेसन:
एकल
प्याकेजिङ:
रील
उचाइ:
0.74 mm
लम्बाइ:
9.15 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
7.1 mm
ब्रान्ड:
Infineon / IR
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
83 S
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
19 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SP001575282
Tags
IRF777, IRF77, IRF7, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R
***Components
MOSFET N-Ch 150V 67A Direct-FET L8
***ment14 APAC
N CH MOSFET, 150V, 11A DIRECTFET L8
***ied Electronics & Automation
MOSFET; 150V, 67A, 11 MOHM, 97NC QG
***i-Key
MOSFET N-CH 150V 375A DIRECTFET
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5
भाग # Mfg। विवरण स्टक मूल्य
IRF7779L2TR1PBF
DISTI # IRF7779L2TR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF7779L2TR1PBF
    DISTI # IRF7779L2TR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF7779L2TR1PBF
      DISTI # IRF7779L2TR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 150V 375A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF7779L2TR1PBF
        DISTI # 70019645        		Infineon Technologies AGIRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8
        RoHS: Compliant        		0
        • 1000:$3.4300
        IRF7779L2TR1PBF
        DISTI # 942-IRF7779L2TR1PBF        		Infineon Technologies AGMOSFET 150V 67A 11mOhm 97nC Qg
        RoHS: Compliant        		0
          IRF7779L2TR1PBF
          DISTI # 1791559          		Infineon Technologies AGMOSFET, N CH, 150V, 67A, DIRECTFET L8
          RoHS: Compliant          		0
          • 1:$9.7600
          • 10:$5.9600
          • 100:$5.6700
          • 250:$5.3600
          • 500:$5.1700
          • 1000:$5.0000
          • 2000:$4.7900
          • 5000:$4.6600
          छवि भाग # विवरण
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF

          		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF

          		 MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF.

          Mfr.#: IRF7779L2TRPBF.

          OMO.#: OMO-IRF7779L2TRPBF--1190

          		 Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
          IRF7779L2TR1PBF

          Mfr.#: IRF7779L2TR1PBF

          OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
          IRF7779L2TRPBF

          Mfr.#: IRF7779L2TRPBF

          OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
          उपलब्धता
          स्टक:
          Available
          अर्डर मा:
          2500
          मात्रा प्रविष्ट गर्नुहोस्:
          IRF7779L2TR1PBF को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
          बाट सुरु गर्नुहोस्
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