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STD3NK80Z-1

STD3NK80Z-1
Mfr. #:
STD3NK80Z-1
निर्माता:
STMicroelectronics
विवरण:
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
STD3NK80Z-1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
STD3NK80Z-1 थप जानकारी STD3NK80Z-1 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-251-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
800 V
आईडी - निरन्तर ड्रेन वर्तमान:
2.5 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
4.5 Ohms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
4.5 V
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
19 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 150 C
Pd - शक्ति अपव्यय:
70 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
सुपरमेस
प्याकेजिङ:
ट्यूब
उचाइ:
6.2 mm
लम्बाइ:
6.6 mm
शृङ्खला:
STD3NK80Z-1
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
2.4 mm
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
2.1 S
पतन समय:
40 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
27 ns
कारखाना प्याक मात्रा:
3000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
36 ns
सामान्य टर्न-अन ढिलाइ समय:
17 ns
एकाइ वजन:
0.139332 oz
Tags
STD3NK80Z-1, STD3NK80Z, STD3NK80, STD3NK8, STD3NK, STD3N, STD3, STD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-CHANNEL 800V - 3.8 Ohm - 2.5A IPAK Zener-Protected SuperMESH™ Power MOSFET
*** Electronics
STMICROELECTRONICS STD3NK80Z-1 Power MOSFET, N Channel, 1.25 A, 800 V, 3.8 ohm, 10 V, 3.75 V
***ark
MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***icroelectronics
N-CHANNEL 900V - 5.5 Ohm - 2.1A - DPAK ZENER-PROTECTED SUPERMESH MOSFET
***va Crawler
N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in IPAK package
***ark
MOSFET, N CHANNEL, 900V, 2.1A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:1.05A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:-RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-CHANNEL 800V - 3 OHM - 3A IPAK Zener-Protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 800 V 3.5 Ohm Through Hole SuperMESH Power Mosfet - IPAK
***va Crawler
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package
***r Electronics
Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***icroelectronics
N-channel 620 V, 3 Ohm, 2.2 A, IPAK SuperMESH3(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ment14 APAC
MOSFET, N CH, 620V, 2.2A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:620V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, IPAK
***r Electronics
Power Field-Effect Transistor, 2.6A I(D), 800V, 2.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Linghting, ATX power and industrial power applications.
***i-Key
MOSFET N-CH 600V 2.4A IPAK
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, IPAK
***ark
SuperFET2 800V 3400 mOhm Zener embedded, IPAK PKG - TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA
***r Electronics
Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
भाग # Mfg। विवरण स्टक मूल्य
STD3NK80Z-1
DISTI # 497-12557-5-ND		STMicroelectronicsMOSFET N-CH 800V 2.5A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube		Temporarily Out of Stock
  • 3000:$0.7796
STD3NK80Z-1
DISTI # STD3NK80Z-1		STMicroelectronicsTrans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD3NK80Z-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.7869
  • 6000:$0.7499
  • 12000:$0.7159
  • 18000:$0.6839
  • 30000:$0.6699
STD3NK80Z-1
DISTI # 33R1154		STMicroelectronicsMOSFET, N CHANNEL, 800V, 2.5A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):3.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:-827
  • 1:$1.7700
  • 10:$1.5300
  • 100:$1.1500
  • 500:$0.9840
  • 1000:$0.8500
  • 2500:$0.6930
  • 10000:$0.6580
STD3NK80Z-1
DISTI # 511-STD3NK80Z-1		STMicroelectronicsMOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
RoHS: Compliant		2501
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.7620
  • 3000:$0.7090
  • 6000:$0.6830
  • 9000:$0.6570
STD3NK80Z-1
DISTI # 6875352P		STMicroelectronicsMOSFET N-CH 800V 2.5A SUPERMESH IPAK, TU169
  • 25:£0.9520
  • 50:£0.8560
  • 125:£0.7600
  • 250:£0.7300
STD3NK80Z-1
DISTI # XSFP00000156491		STMicroelectronicsPowerField-EffectTransistor,2.5AI(D),800V,4.5ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-251
RoHS: Compliant		20997
  • 450:$0.4500
  • 20997:$0.4091
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 1:$2.4600
  • 10:$2.0900
  • 100:$1.6600
  • 500:$1.4500
  • 1000:$1.2100
  • 3000:$1.1300
  • 6000:$1.0900
  • 9000:$1.0400
STD3NK80Z-1
DISTI # 1752036		STMicroelectronicsMOSFET, N CH, 800V, 2.5A, IPAK
RoHS: Compliant		827
  • 5:£1.2300
  • 25:£0.9130
  • 100:£0.8100
  • 250:£0.7780
  • 500:£0.7410
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उपलब्धता
स्टक:
Available
अर्डर मा:
1986
मात्रा प्रविष्ट गर्नुहोस्:
STD3NK80Z-1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ १.५४
US$ १.५४
10
US$ १.३१
US$ १३.१०
100
US$ १.०५
US$ १०५.००
500
US$ ०.९२
US$ ४५९.५०
1000
US$ ०.७६
US$ ७६२.००
3000
US$ ०.७१
US$ २ १२७.००
6000
US$ ०.६८
US$ ४ ०९८.००
9000
US$ ०.६६
US$ ५ ९१३.००
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