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IPB64N25S320ATMA1

IPB64N25S320ATMA1
Mfr. #:
IPB64N25S320ATMA1
निर्माता:
Infineon Technologies
विवरण:
MOSFET N-Ch 250V 64A D2PAK-2
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IPB64N25S320ATMA1 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB64N25S320ATMA1 DatasheetIPB64N25S320ATMA1 Datasheet (P4-P6)IPB64N25S320ATMA1 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
TO-263-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
250 V
आईडी - निरन्तर ड्रेन वर्तमान:
64 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
17.5 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
2 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
89 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
300 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
योग्यता:
AEC-Q101
प्याकेजिङ:
रील
उचाइ:
4.4 mm
लम्बाइ:
10 mm
शृङ्खला:
XPB64N25
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
9.25 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
पतन समय:
12 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
20 ns
कारखाना प्याक मात्रा:
1000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
45 ns
सामान्य टर्न-अन ढिलाइ समय:
18 ns
भाग # उपनाम:
IPB64N25S3-20 IPB64N25S32XT SP000876596
एकाइ वजन:
0.068654 oz
Tags
IPB6, IPB
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 1000, N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
***p One Stop Japan
Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG-TO-263-3
***et Europe
Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R
***ical
Trans MOSFET 250V 64A Automotive
***i-Key
MOSFET N-CH 250V 64A TO263-3
***ronik
N-CH 250V 64A 20mOhm TO263-3
***ark
Mosfet, Aec-Q101, N-Ch, 250V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.0175Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
MOSFET, AEC-Q101, N-CH, 250V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, N-CH, 250V, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:64A; Napięcie drenu / źródła Vds:250V; Rezystancja przewodzenia Rds(on):0.0175ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:300W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:OptiMOS T Series; Kwalifikacja motoryzacyjna:AEC-Q101; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection
भाग # Mfg। विवरण स्टक मूल्य
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.7122
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 250V 64A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.5336
  • 100:$5.5988
  • 10:$6.8280
  • 1:$7.6500
IPB64N25S320ATMA1
DISTI # IPB64N25S320ATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.3900
  • 2000:$3.2900
  • 4000:$3.1900
  • 6000:$3.0900
  • 10000:$2.9900
IPB64N25S320ATMA1
DISTI # SP000876596		Infineon Technologies AGTrans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€3.0900
  • 2000:€2.9900
  • 4000:€2.9900
  • 6000:€2.7900
  • 10000:€2.6900
IPB64N25S320ATMA1
DISTI # 13AC9030		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1:$6.3900
  • 10:$5.4300
  • 25:$5.1900
  • 50:$4.9500
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S3-20
DISTI # 726-IPB64N25S3-20		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant		42
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 726-IPB64N25S320ATMA		Infineon Technologies AGMOSFET N-Ch 250V 64A D2PAK-2
RoHS: Compliant		0
  • 1:$6.3900
  • 10:$5.4300
  • 100:$4.7100
  • 250:$4.4600
  • 500:$4.0100
  • 1000:$3.3800
IPB64N25S320ATMA1
DISTI # 1702295		Infineon Technologies AGMOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL1000
  • 1000:£2.3840
  • 2000:£2.3050
IPB64N25S320ATMA1
DISTI # 2725843		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant		0
  • 1:$12.2000
  • 10:$10.8900
  • 100:$8.9300
  • 500:$7.2300
IPB64N25S320ATMA1
DISTI # 2725843		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 250V, TO-263
RoHS: Compliant		0
  • 1:£4.4800
  • 10:£4.0000
  • 100:£3.4200
  • 250:£3.2400
  • 500:£2.9900
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OMO.#: OMO-IPB64N25S3-20

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DTC115ECAHZGT116

Mfr.#: DTC115ECAHZGT116

OMO.#: OMO-DTC115ECAHZGT116-ROHM-SEMI

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SIJ186DP-T1-GE3

Mfr.#: SIJ186DP-T1-GE3

OMO.#: OMO-SIJ186DP-T1-GE3-VISHAY

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उपलब्धता
स्टक:
900
अर्डर मा:
2883
मात्रा प्रविष्ट गर्नुहोस्:
IPB64N25S320ATMA1 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ६.३८
US$ ६.३८
10
US$ ५.४२
US$ ५४.२०
100
US$ ४.७०
US$ ४७०.००
250
US$ ४.४६
US$ १ ११५.००
500
US$ ४.००
US$ २ ०००.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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