SI4164DY-T1-GE3

SI4164DY-T1-GE3
Mfr. #:
SI4164DY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4164DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4164DY-T1-GE3 DatasheetSI4164DY-T1-GE3 Datasheet (P4-P6)SI4164DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
SI4164DY-T1-GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
शृङ्खला:
SI4
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI4164DY-GE3
एकाइ वजन:
0.006596 oz
Tags
SI4164DY-T, SI4164D, SI4164, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET; N-CH; VDS 30V; RDS(ON) 0.0026Ohm; ID 30A; SO-8; PD 6.0W; VGS +/-20V
***ark
N Channel Mosfet, 30V, 30A, Soic, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:2.5Vrohs Compliant: Yes
***nell
MOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
भाग # Mfg। विवरण स्टक मूल्य
SI4164DY-T1-GE3
DISTI # V72:2272_09215538
Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
RoHS: Compliant
2277
  • 1000:$0.6622
  • 500:$0.7468
  • 250:$0.8021
  • 100:$0.8569
  • 25:$1.0278
  • 10:$1.0617
  • 1:$1.2263
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4240In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4240In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 30A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.6554
SI4164DY-T1-GE3
DISTI # 31154794
Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R
RoHS: Compliant
2277
  • 1000:$0.6622
  • 500:$0.7468
  • 250:$0.8021
  • 100:$0.8569
  • 25:$1.0278
  • 13:$1.0617
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4164DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5429
  • 5000:$0.5269
  • 10000:$0.5049
  • 15000:$0.4909
  • 25000:$0.4779
SI4164DY-T1-GE3
DISTI # SI4164DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R (Alt: SI4164DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.8249
  • 5000:€0.5909
  • 10000:€0.4799
  • 15000:€0.4239
  • 25000:€0.4059
SI4164DY-T1-GE3
DISTI # 69W7195
Vishay IntertechnologiesTrans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 69W7195)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 1:$1.6500
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1500
  • 100:$1.0400
  • 250:$0.9670
  • 500:$0.8940
SI4164DY-T1-GE3
DISTI # 97W2646
Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes1
  • 1:$1.6500
  • 10:$1.3600
  • 25:$1.2500
  • 50:$1.1500
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.7850
SI4164DY-T1-GE3.
DISTI # 28AC2135
Vishay IntertechnologiesN-CHANNEL 30V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.7840
  • 2500:$0.7840
SI4164DY-T1-GE3
DISTI # 70026401
Vishay SiliconixMOSFET,N-CH,VDS 30V,RDS(ON) 0.0026Ohm,ID 30A,SO-8,PD 6.0W,VGS +/-20V
RoHS: Compliant
0
  • 2500:$0.6500
SI4164DY-T1-GE3
DISTI # 781-SI4164DY-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
RoHS: Compliant
55
  • 1:$1.6500
  • 10:$1.3600
  • 100:$1.0400
  • 500:$0.8940
  • 1000:$0.8460
  • 2500:$0.7840
SI4164DY-T1-GE3
DISTI # 8123198P
Vishay IntertechnologiesTRANS MOSFET N-CH 30V 21.5A, RL1400
  • 100:£0.7550
SI4164DY-T1-GE3Vishay Semiconductors21500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET5904
  • 3637:$0.3630
  • 1866:$0.4125
  • 1:$1.6500
SI4164DY-T1-GE3Vishay Siliconix 7380
  • 5:$1.2375
  • 18:$0.8044
  • 64:$0.4641
  • 217:$0.3960
  • 469:$0.3465
  • 1113:$0.3218
SI4164DYT1GE3Vishay Intertechnologies 
RoHS: Compliant
Europe - 2500
    SI4164DY-T1-GE3
    DISTI # 2335304
    Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC
    RoHS: Compliant
    1
    • 1:$2.6200
    • 10:$2.1600
    • 100:$1.6500
    • 500:$1.4200
    • 1000:$1.2400
    • 2500:$1.2400
    SI4164DY-T1-GE3
    DISTI # 2478947
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 30A, SOIC, FULL REEL
    RoHS: Compliant
    0
    • 2500:$2.3100
    • 5000:$1.7700
    • 10000:$1.4200
    SI4164DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas -
    • 2500:$0.6050
    • 5000:$0.5720
    • 10000:$0.5530
    SI4164DY-T1-GE3
    DISTI # 2335304
    Vishay IntertechnologiesMOSFET, N CH, 30V, 0.0026OHM, 30A, SOIC
    RoHS: Compliant
    1
    • 5:£1.0800
    • 25:£1.0300
    • 100:£0.7700
    • 250:£0.7220
    • 500:£0.6730
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    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    1987
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4164DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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    1
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    10
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    US$ १३.५०
    100
    US$ १.०३
    US$ १०३.००
    500
    US$ ०.८९
    US$ ४४६.५०
    1000
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