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IRFBA90N20DPBF

IRFBA90N20DPBF
Mfr. #:
IRFBA90N20DPBF
निर्माता:
Infineon Technologies
विवरण:
MOSFET MOSFT 200V 98A 23mOhm 160nC
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
IRFBA90N20DPBF डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFBA90N20DPBF DatasheetIRFBA90N20DPBF Datasheet (P4-P6)IRFBA90N20DPBF Datasheet (P7-P9)
ECAD Model:
थप जानकारी:
IRFBA90N20DPBF थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
इन्फिनोन
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
TO-220-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
200 V
आईडी - निरन्तर ड्रेन वर्तमान:
98 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
23 mOhms
Vgs - गेट-स्रोत भोल्टेज:
30 V
Qg - गेट चार्ज:
160 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
650 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
प्याकेजिङ:
ट्यूब
उचाइ:
15.65 mm
लम्बाइ:
10 mm
ट्रान्जिस्टर प्रकार:
1 N-Channel
चौडाइ:
4.4 mm
ब्रान्ड:
Infineon टेक्नोलोजीहरू
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
41 S
पतन समय:
77 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
160 ns
कारखाना प्याक मात्रा:
50
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
39 ns
सामान्य टर्न-अन ढिलाइ समय:
23 ns
भाग # उपनाम:
SP001551776
एकाइ वजन:
0.211644 oz
Tags
IRFBA, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a Super 220 (TO-273AA) package, SUPER220-3, RoHS
***ark
Trans Mosfet N-Ch 200V 98A 3-Pin(3+Tab) To-273Aa Rohs Compliant: Yes
***ure Electronics
Single N-Channel 200 V 0.023 Ohm 160 nC HEXFET® Power Mosfet - SBM-2
***eco
IRFBA90N20DPBF,MOSFET, 200V, 9 8A, 23 MOHM, 160 NC QG, TO-27
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
भाग # Mfg। विवरण स्टक मूल्य
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 98A SUPER-220
RoHS: Compliant
Min Qty: 1
Container: Tube		2In Stock
  • 1000:$3.8889
  • 500:$4.4651
  • 100:$5.3293
  • 50:$5.9054
  • 1:$7.2000
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA (Alt: IRFBA90N20DPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 50
  • 3000:$3.4917
  • 6000:$3.3254
  • 9000:$3.2734
  • 15000:$3.1269
  • 30000:$3.0809
  • 75000:$2.9929
  • 150000:$2.9097
IRFBA90N20DPBF
DISTI # IRFBA90N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA - Rail/Tube (Alt: IRFBA90N20DPBF)
RoHS: Compliant
Min Qty: 150
Container: Tube		Americas - 0
  • 150:$2.9900
  • 250:$2.8900
  • 400:$2.7900
  • 750:$2.6900
  • 1500:$2.5900
IRFBA90N20DPBF
DISTI # SP001551776		Infineon Technologies AGTrans MOSFET N-CH 200V 98A 3-Pin(3+Tab) TO-273AA (Alt: SP001551776)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€6.9805
  • 25:€6.1180
  • 100:€5.2785
  • 250:€4.6000
  • 1000:€4.1515
IRFBA90N20DPBF.
DISTI # 82AC5173		Infineon Technologies AGTRANS MOSFET N-CH 200V 98A 3-PIN(3+TAB) TO-273AA0
  • 1:$2.9900
  • 250:$2.8900
  • 400:$2.7900
  • 750:$2.6900
  • 1500:$2.5900
IRFBA90N20DPBF
DISTI # 70018297		Infineon Technologies AGIRFBA90N20DPBF N-channel MOSFET Transistor,98 A,200 V,3-Pin TO-273AA
RoHS: Compliant		0
  • 150:$14.0300
IRFBA90N20DPBFInfineon Technologies AGPower Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA
RoHS: Compliant		20
  • 1000:$3.4500
  • 500:$3.6300
  • 100:$3.7800
  • 25:$3.9400
  • 1:$4.2400
IRFBA90N20DPBF
DISTI # 942-IRFBA90N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 98A 23mOhm 160nC
RoHS: Compliant		0
  • 1:$6.2300
  • 10:$5.6400
  • 50:$5.3700
  • 100:$4.6700
  • 250:$4.4600
IRFBA90N20DPBFInternational Rectifier 
RoHS: Compliant		Europe - 50
    IRFBA90N20DPBF.
    DISTI # 2132413    		Infineon Technologies AGN CH MOSFET, 200V, 98A, SUPER-220
    RoHS: Compliant    		0
    • 1:£5.0000
    • 10:£4.5000
    • 25:£4.3000
    • 50:£4.0100
    • 100:£3.9400
    IRFBA90N20DPBF
    DISTI # XSLY00000000943    		Infineon Technologies AGTO-273AA (Super-220)
    RoHS: Compliant    		288
    • 150:$4.1900
    • 288:$3.9100
    IRFBA90N20DPBF
    DISTI # XSFP00000020578    		Infineon Technologies AGPowerField-EffectTransistor,95AI(D),200V,0.023ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-273AA
    RoHS: Compliant    		67
    • 50:$4.7100
    • 67:$4.4100
    IRFBA90N20DPBF
    DISTI # 8658030    		Infineon Technologies AGMOSFET, N, 200V, 98A, SUPER 220
    RoHS: Compliant    		0
    • 1:$9.8600
    • 10:$8.9300
    • 50:$8.5000
    • 100:$7.4000
    • 250:$7.0600
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    OMO.#: OMO-ADS131E04IPAGR-TEXAS-INSTRUMENTS

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    SMCJ36CA

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    OMO.#: OMO-SMCJ36CA-LITTELFUSE

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    स्टक:
    194
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    2177
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