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SCTWA50N120

SCTWA50N120
Mfr. #:
SCTWA50N120
निर्माता:
STMicroelectronics
विवरण:
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SCTWA50N120 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SCTWA50N120 थप जानकारी SCTWA50N120 Product Details
उत्पादन विशेषता
विशेषता मान
निर्माता:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
SiC
माउन्टिङ शैली:
प्वाल मार्फत
प्याकेज / केस:
HiP-247-3
च्यानलहरूको संख्या:
1 Channel
ट्रान्जिस्टर ध्रुवता:
N- च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
1.2 kV
आईडी - निरन्तर ड्रेन वर्तमान:
65 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
52 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.8 V
Vgs - गेट-स्रोत भोल्टेज:
25 V
Qg - गेट चार्ज:
122 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 200 C
Pd - शक्ति अपव्यय:
318 W
कन्फिगरेसन:
एकल
च्यानल मोड:
वृद्धि
व्यापार नाम:
HiP247â?¢
शृङ्खला:
SCTWA50N120
ट्रान्जिस्टर प्रकार:
1 N-Channel
ब्रान्ड:
STM माइक्रोइलेक्ट्रोनिक्स
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
600
उपश्रेणी:
MOSFETs
Tags
SCTWA, SCTW, SCT
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCTWA50N120 Series 1200 V 65 A Silicon carbide Power MOSFET - HiP-247 (TO-247-3)
***icroelectronics
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
***ical
Trans MOSFET N-CH SiC 1.2KV 65A 3-Pin(3+Tab) HIP-247 Tube
***icroelectronics SCT
SiC MOSFETs, 1200V ,65A, 69mΩ, HIP247 long leads
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
भाग # Mfg। विवरण स्टक मूल्य
SCTWA50N120
DISTI # 33792122		STMicroelectronicsSilicon Carbide Power MOSFET600
  • 1:$25.0832
SCTWA50N120
DISTI # 497-18637-ND		STMicroelectronicsMOSFET N-CH 1200V 65A HIP247
RoHS: Compliant
Min Qty: 1
Container: Tube		600In Stock
  • 100:$27.8160
  • 10:$32.5740
  • 1:$35.3200
SCTWA50N120
DISTI # V99:2348_17697480		STMicroelectronicsSilicon Carbide Power MOSFET0
    SCTWA50N120
    DISTI # V36:1790_17051738    		STMicroelectronicsSilicon Carbide Power MOSFET0
    • 600000:$22.1800
    • 300000:$22.1900
    • 60000:$24.1700
    • 6000:$28.9200
    • 600:$29.7900
    SCTWA50N120
    DISTI # SCTWA50N120    		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
      SCTWA50N120
      DISTI # SCTWA50N120      		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube      		Europe - 0
      • 1000:€22.1900
      • 500:€23.7900
      • 100:€24.6900
      • 50:€25.5900
      • 25:€26.5900
      • 10:€27.6900
      • 1:€30.2900
      SCTWA50N120
      DISTI # SCTWA50N120      		STMicroelectronicsTrans MOSFET N-CH 1200V 65A 3-Pin HiP247 Tube - Rail/Tube (Alt: SCTWA50N120)
      RoHS: Compliant
      Min Qty: 600
      Container: Tube      		Americas - 0
      • 6000:$23.2900
      • 3600:$23.7900
      • 2400:$24.8900
      • 1200:$26.0900
      • 600:$27.3900
      SCTWA50N120
      DISTI # 20AC3771      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$22.8800
      SCTWA50N120
      DISTI # 511-SCTWA50N120      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
      RoHS: Compliant      		0
      • 1:$35.3100
      • 5:$34.9500
      • 10:$32.5700
      • 25:$31.1100
      • 100:$27.8100
      • 250:$26.5300
      छवि भाग # विवरण
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120

      		 MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
      SCTWA30N120

      Mfr.#: SCTWA30N120

      OMO.#: OMO-SCTWA30N120

      		 MOSFET
      SCTWA10N120

      Mfr.#: SCTWA10N120

      OMO.#: OMO-SCTWA10N120

      		 MOSFET
      SCTWA20N120

      Mfr.#: SCTWA20N120

      OMO.#: OMO-SCTWA20N120

      		 MOSFET
      SCTWA10N120

      Mfr.#: SCTWA10N120

      OMO.#: OMO-SCTWA10N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA20N120

      Mfr.#: SCTWA20N120

      OMO.#: OMO-SCTWA20N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA30N120

      Mfr.#: SCTWA30N120

      OMO.#: OMO-SCTWA30N120-STMICROELECTRONICS

      		 IC POWER MOSFET 1200V HIP247
      SCTWA50N120

      Mfr.#: SCTWA50N120

      OMO.#: OMO-SCTWA50N120-STMICROELECTRONICS

      		 MOSFET N-CH 1200V 65A HIP247
      उपलब्धता
      स्टक:
      Available
      अर्डर मा:
      2000
      मात्रा प्रविष्ट गर्नुहोस्:
      SCTWA50N120 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
      सन्दर्भ मूल्य (USD)
      मात्रा
      एकाइ मूल्य
      विस्तार मूल्य
      1
      US$ ३५.३१
      US$ ३५.३१
      5
      US$ ३४.९५
      US$ १७४.७५
      10
      US$ ३२.५७
      US$ ३२५.७०
      25
      US$ ३१.११
      US$ ७७७.७५
      100
      US$ २७.८१
      US$ २ ७८१.००
      250
      US$ २६.५३
      US$ ६ ६३२.५०
      2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
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