SQUN702E-T1_GE3

SQUN702E-T1_GE3
Mfr. #:
SQUN702E-T1_GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SQUN702E-T1_GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
SQUN702E-T1_GE3 थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
मर्नुहोस्
च्यानलहरूको संख्या:
3 Channel
ट्रान्जिस्टर ध्रुवता:
एन-च्यानल, पी-च्यानल
Vds - ड्रेन-स्रोत ब्रेकडाउन भोल्टेज:
40 V, 200 V
आईडी - निरन्तर ड्रेन वर्तमान:
20 A, 30 A
Rds अन - ड्रेन-स्रोत प्रतिरोध:
9.2 mOhms, 30 mOhms, 60 mOhms
Vgs th - गेट-स्रोत थ्रेसहोल्ड भोल्टेज:
1.5 V, 2.5 V
Vgs - गेट-स्रोत भोल्टेज:
20 V
Qg - गेट चार्ज:
14 nC, 23 nC, 30.2 nC
न्यूनतम परिचालन तापमान:
- 55 C
अधिकतम परिचालन तापमान:
+ 175 C
Pd - शक्ति अपव्यय:
48 W, 60 W
कन्फिगरेसन:
ट्रिपल
च्यानल मोड:
वृद्धि
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
ट्रान्जिस्टर प्रकार:
2 N-Channel, 1 P-Channel
ब्रान्ड:
Vishay / Siliconix
फर्वार्ड ट्रान्सकन्डक्टन्स - न्यूनतम:
16 S, 19 S, 65 S
पतन समय:
2 ns, 10 ns, 19 ns
उत्पादन प्रकार:
MOSFET
उठ्ने समय:
3 ns, 9 ns, 12 ns
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
MOSFETs
सामान्य टर्न-अफ ढिलाइ समय:
15 ns, 22 ns, 43 ns
सामान्य टर्न-अन ढिलाइ समय:
7 ns, 8 ns, 10 ns
Tags
SQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
छवि भाग # विवरण
MPX256K305R

Mfr.#: MPX256K305R

OMO.#: OMO-MPX256K305R

Film Capacitors 25uF 305V
MPX106K305N

Mfr.#: MPX106K305N

OMO.#: OMO-MPX106K305N

Film Capacitors 10uF 305V
PCAN2512E49R9BST5

Mfr.#: PCAN2512E49R9BST5

OMO.#: OMO-PCAN2512E49R9BST5

Thin Film Resistors - SMD 6 Watt 49.9ohm 25ppm 0.1% 2512 SMD
MPX256K305R

Mfr.#: MPX256K305R

OMO.#: OMO-MPX256K305R-ILLINOIS-CAPACITOR

CAP FILM 25UF 10% 305VAC RAD
PCAN2512E40R2BST5

Mfr.#: PCAN2512E40R2BST5

OMO.#: OMO-PCAN2512E40R2BST5-VISHAY

Thin Film Resistors - SMD 6 Watt 40.2ohm 25ppm 0.1% 2512 SMD
PCAN2512E49R9BST5

Mfr.#: PCAN2512E49R9BST5

OMO.#: OMO-PCAN2512E49R9BST5-VISHAY

Thin Film Resistors - SMD 6 Watt 49.9ohm 25ppm 0.1% 2512 SMD
D2TO035C10R00FTE3

Mfr.#: D2TO035C10R00FTE3

OMO.#: OMO-D2TO035C10R00FTE3-VISHAY

Thick Film Resistors - SMD 35W 10ohm 1%
352230RFT

Mfr.#: 352230RFT

OMO.#: OMO-352230RFT-TE-CONNECTIVITY-AMP

Res Thick Film 2512 30 Ohm 1% 3W ±100ppm/°C Pad SMD T/R
उपलब्धता
स्टक:
Available
अर्डर मा:
1985
मात्रा प्रविष्ट गर्नुहोस्:
SQUN702E-T1_GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
सन्दर्भ मूल्य (USD)
मात्रा
एकाइ मूल्य
विस्तार मूल्य
1
US$ ३.०२
US$ ३.०२
10
US$ २.५०
US$ २५.००
100
US$ २.०६
US$ २०६.००
250
US$ १.९९
US$ ४९७.५०
500
US$ १.७९
US$ ८९५.००
1000
US$ १.५१
US$ १ ५१०.००
2021 देखि कम आपूर्तिमा अर्धचालकको कारण, तलको मूल्य 2021 अघि सामान्य मूल्य हो। कृपया पुष्टि गर्न सोधपुछ पठाउनुहोस्।
बाट सुरु गर्नुहोस्
नवीनतम उत्पादनहरू
  • SIC645A, 60 A, VRPower® Smart Power Stage (SP
    Vishay's SIC645A, VRPower® smart power stage (SPS) module is an optimized driver and power stage solution for high-density, synchronous DC/DC power conversion.
  • Si8410DB Chipscale N-Channel MOSFET
    Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
  • SiA436DJ 8 V N-Channel TrenchFET Power MOSFET
    Vishay's MOSFETs have low on-resistance and costs and are designed to save valuable PCB space for small, portable electronics.
  • SIC46 microBUCK Series
    Vishay Siliconix's SiC46 high efficiency synchronous buck regulators with integrated high-side and low-side power MOSFETs.
  • ThunderFETs
    Vishay's ThunderFETs have excellent efficiency in high density power supplies and are also compatible with all common MOSFET control circuits.
Top