SI4890BDY-T1-GE3

SI4890BDY-T1-GE3
Mfr. #:
SI4890BDY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4890BDY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4890BDY-T1-GE3 DatasheetSI4890BDY-T1-GE3 Datasheet (P4-P6)SI4890BDY-T1-GE3 Datasheet (P7)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
Y
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
शृङ्खला:
SI4
चौडाइ:
3.9 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI4890BDY-GE3
एकाइ वजन:
0.006596 oz
Tags
SI4890, SI489, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4890BDY Series N-Channel 30 V 12 mOhms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:10.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.6V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes
भाग # Mfg। विवरण स्टक मूल्य
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 16A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.5852
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4890BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5529
  • 5000:$0.5359
  • 10000:$0.5139
  • 15000:$0.4999
  • 25000:$0.4869
SI4890BDY-T1-GE3
DISTI # SI4890BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 10.7A 8-Pin SOIC N T/R (Alt: SI4890BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.7209
  • 5000:€0.4919
  • 10000:€0.4229
  • 15000:€0.3909
  • 25000:€0.3639
SI4890BDY-T1-GE3
DISTI # 781-SI4890BDY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 16A 5.7W 12mohm @ 10V
RoHS: Compliant
0
    छवि भाग # विवरण
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3

    MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
    SI4890BDY-T1-GE3

    Mfr.#: SI4890BDY-T1-GE3

    OMO.#: OMO-SI4890BDY-T1-GE3-VISHAY

    IGBT Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    SI4890BDY-T1-E3

    Mfr.#: SI4890BDY-T1-E3

    OMO.#: OMO-SI4890BDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 30V 16A 5.7W 12mohm @ 10V
    उपलब्धता
    स्टक:
    Available
    अर्डर मा:
    2000
    मात्रा प्रविष्ट गर्नुहोस्:
    SI4890BDY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
    सन्दर्भ मूल्य (USD)
    मात्रा
    एकाइ मूल्य
    विस्तार मूल्य
    1
    US$ १.३२
    US$ १.३२
    10
    US$ १.०९
    US$ १०.९०
    100
    US$ ०.८४
    US$ ८४.००
    500
    US$ ०.७२
    US$ ३६१.५०
    1000
    US$ ०.५७
    US$ ५७०.००
    बाट सुरु गर्नुहोस्
    नवीनतम उत्पादनहरू
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