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SI4156DY-T1-GE3

SI4156DY-T1-GE3
Mfr. #:
SI4156DY-T1-GE3
निर्माता:
Vishay / Siliconix
विवरण:
MOSFET 30V Vds 20V Vgs SO-8
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
SI4156DY-T1-GE3 डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4156DY-T1-GE3 DatasheetSI4156DY-T1-GE3 Datasheet (P4-P6)SI4156DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
उत्पादन विशेषता
विशेषता मान
निर्माता:
विसय
उत्पादन कोटि:
MOSFET
RoHS:
E
प्रविधि:
सि
माउन्टिङ शैली:
SMD/SMT
प्याकेज / केस:
SO-8
व्यापार नाम:
TrenchFET
प्याकेजिङ:
रील
उचाइ:
1.75 mm
लम्बाइ:
4.9 mm
शृङ्खला:
SI4
चौडाइ:
3.9 mm
ब्रान्ड:
Vishay / Siliconix
उत्पादन प्रकार:
MOSFET
कारखाना प्याक मात्रा:
2500
उपश्रेणी:
MOSFETs
भाग # उपनाम:
SI4156DY-GE3
एकाइ वजन:
0.017870 oz
Tags
SI4156, SI415, SI41, SI4
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
भाग # Mfg। विवरण स्टक मूल्य
SI4156DY-T1-GE3
DISTI # V72:2272_09215535		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		2446
  • 1000:$0.3952
  • 500:$0.5010
  • 250:$0.5338
  • 100:$0.5931
  • 25:$0.6938
  • 10:$0.8479
  • 1:$1.0231
SI4156DY-T1-GE3
DISTI # V36:1790_09215535		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.3681
  • 1250000:$0.3683
  • 250000:$0.3785
  • 25000:$0.3944
  • 2500:$0.3969
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5575In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5575In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 24A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 25000:$0.3591
  • 12500:$0.3629
  • 5000:$0.3771
  • 2500:$0.3969
SI4156DY-T1-GE3
DISTI # 32899046		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R
RoHS: Compliant		2446
  • 17:$1.0231
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4156DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3205
  • 15000:$0.3294
  • 10000:$0.3387
  • 5000:$0.3531
  • 2500:$0.3639
SI4156DY-T1-GE3
DISTI # SI4156DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 15.7A 8-Pin SOIC N T/R (Alt: SI4156DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4156DY-T1-GE3
    DISTI # 35R6233    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 24A,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:2.2V,Threshold Voltage Vgs:2.2V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 500:$0.5190
    • 250:$0.5610
    • 100:$0.6030
    • 50:$0.6640
    • 25:$0.7250
    • 10:$0.7860
    • 1:$0.9600
    SI4156DY-T1-GE3.
    DISTI # 15AC0295    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0048ohm,Rds(on) Test Voltage Vgs:2.2V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:2.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 25000:$0.3310
    • 15000:$0.3400
    • 10000:$0.3490
    • 5000:$0.3640
    • 1:$0.3750
    SI4156DY-T1-GE3
    DISTI # 781-SI4156DY-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		5000
    • 1:$0.9400
    • 10:$0.7770
    • 100:$0.5960
    • 500:$0.5130
    • 1000:$0.4040
    • 2500:$0.3770
    • 5000:$0.3590
    • 10000:$0.3510
    SI4156DY-T1-GE3Vishay Intertechnologies 2500
      SI4156DY-T1-GE3
      DISTI # SI4156DY-GE3      		Vishay IntertechnologiesN-Ch 30V 24A 2,5W 0,006R SO8
      RoHS: Compliant      		900
      • 50:€0.3460
      • 100:€0.2860
      • 500:€0.2560
      • 2500:€0.2475
      SI4156DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
      RoHS: Compliant      		Americas -
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        उपलब्धता
        स्टक:
        Available
        अर्डर मा:
        1986
        मात्रा प्रविष्ट गर्नुहोस्:
        SI4156DY-T1-GE3 को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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