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AS4C512M16D3LB-12BINTR

AS4C512M16D3LB-12BINTR
Mfr. #:
AS4C512M16D3LB-12BINTR
निर्माता:
Alliance Memory
विवरण:
DRAM 8G - Dual Die Package (DDP) -12 512M x 16 1.35V(1.283-1.45V) 800MHz DDR3-1600bps/pin Industrial (-40 95 C) 96-ball FBGA
जीवन चक्र:
यस निर्माताबाट नयाँ।
डाटा पाना:
AS4C512M16D3LB-12BINTR डाटा पाना
डेलिभरी:
DHL FedEx Ups TNT EMS
भुक्तानी:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
थप जानकारी:
AS4C512M16D3LB-12BINTR थप जानकारी
उत्पादन विशेषता
विशेषता मान
निर्माता:
गठबन्धन मेमोरी
उत्पादन कोटि:
DRAM
RoHS:
Y
प्रकार:
SDRAM - DDR3L
डाटा बस चौडाइ:
16 bit
संगठन:
512 M x 16
प्याकेज / केस:
FBGA-96
मेमोरी साइज:
8 Gbit
अधिकतम घडी आवृत्ति:
800 MHz
आपूर्ति भोल्टेज - अधिकतम:
1.45 V
आपूर्ति भोल्टेज - न्यूनतम:
1.283 V
हालको आपूर्ति - अधिकतम:
122 mA
न्यूनतम परिचालन तापमान:
- 40 C
अधिकतम परिचालन तापमान:
+ 95 C
शृङ्खला:
AS4C512M16D3LB-12
प्याकेजिङ:
रील
ब्रान्ड:
गठबन्धन मेमोरी
माउन्टिङ शैली:
SMD/SMT
नमी संवेदनशील:
हो
उत्पादन प्रकार:
DRAM
कारखाना प्याक मात्रा:
2000
उपश्रेणी:
मेमोरी र डाटा भण्डारण
Tags
AS4C512M16D3LB, AS4C512M1, AS4C5, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
DDR3 Synchronous DRAM
Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieve high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.
DDR3L SDRAM
Alliance Memory DDR3L SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core and eight corresponding  n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
छवि भाग # विवरण
AS4C512M16D3LA-12BIN

Mfr.#: AS4C512M16D3LA-12BIN

OMO.#: OMO-AS4C512M16D3LA-12BIN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-12BCNTR

Mfr.#: AS4C512M16D3LA-12BCNTR

OMO.#: OMO-AS4C512M16D3LA-12BCNTR

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BCN

Mfr.#: AS4C512M16D3LA-12BCN

OMO.#: OMO-AS4C512M16D3LA-12BCN

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 ET
AS4C512M16D3LA-12BINTR

Mfr.#: AS4C512M16D3LA-12BINTR

OMO.#: OMO-AS4C512M16D3LA-12BINTR

 DRAM 8G 512Mx16 800MHz 1.35V DDR3 IT
AS4C512M16D3LA-10BIN

Mfr.#: AS4C512M16D3LA-10BIN

OMO.#: OMO-AS4C512M16D3LA-10BIN

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 IT
AS4C512M16D3L-12BIN

Mfr.#: AS4C512M16D3L-12BIN

OMO.#: OMO-AS4C512M16D3L-12BIN

 DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
AS4C512M16D3LB-12BCN

Mfr.#: AS4C512M16D3LB-12BCN

OMO.#: OMO-AS4C512M16D3LB-12BCN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, 0 C to 95 C
AS4C512M16D3LB-12BIN

Mfr.#: AS4C512M16D3LB-12BIN

OMO.#: OMO-AS4C512M16D3LB-12BIN

 DRAM 8G, DDR3L, 512M X 16, 1.35V, 96-BALL FBGA, -40 C to 95 C
AS4C512M16D3LA-10BCNTR

Mfr.#: AS4C512M16D3LA-10BCNTR

OMO.#: OMO-AS4C512M16D3LA-10BCNTR

 DRAM 8G 512Mx16 933MHz 1.35V DDR3 ET
AS4C512M16D3L-12BINTR

Mfr.#: AS4C512M16D3L-12BINTR

OMO.#: OMO-AS4C512M16D3L-12BINTR

 DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L IT
उपलब्धता
स्टक:
Available
अर्डर मा:
2500
मात्रा प्रविष्ट गर्नुहोस्:
AS4C512M16D3LB-12BINTR को हालको मूल्य सन्दर्भको लागि मात्र हो, यदि तपाइँ उत्तम मूल्य प्राप्त गर्न चाहनुहुन्छ भने, कृपया हाम्रो बिक्री टोली sales@omo-ic.com मा सोधपुछ वा प्रत्यक्ष इमेल पेश गर्नुहोस्।
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